J. C. Pfister

2.1k total citations
72 papers, 1.6k citations indexed

About

J. C. Pfister is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, J. C. Pfister has authored 72 papers receiving a total of 1.6k indexed citations (citations by other indexed papers that have themselves been cited), including 60 papers in Electrical and Electronic Engineering, 47 papers in Atomic and Molecular Physics, and Optics and 27 papers in Materials Chemistry. Recurrent topics in J. C. Pfister's work include Semiconductor materials and interfaces (36 papers), Silicon and Solar Cell Technologies (26 papers) and Semiconductor materials and devices (25 papers). J. C. Pfister is often cited by papers focused on Semiconductor materials and interfaces (36 papers), Silicon and Solar Cell Technologies (26 papers) and Semiconductor materials and devices (25 papers). J. C. Pfister collaborates with scholars based in France, Germany and India. J. C. Pfister's co-authors include D. Mathiot, G. Bomchil, R. Hérino, K. Barla, D. Bensahel, J.L. Pautrat, N. Magnéa, H. Venghaus, Andreas K. Freund and B. Schaub and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

J. C. Pfister

71 papers receiving 1.5k citations

Peers

Countries citing papers authored by J. C. Pfister

Since Specialization

Citations

This map shows the geographic impact of J. C. Pfister's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. C. Pfister with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. C. Pfister more than expected).

Fields of papers citing papers by J. C. Pfister

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. C. Pfister. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. C. Pfister. The network helps show where J. C. Pfister may publish in the future.

Co-authorship network of co-authors of J. C. Pfister

This figure shows the co-authorship network connecting the top 25 collaborators of J. C. Pfister. A scholar is included among the top collaborators of J. C. Pfister based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. C. Pfister. J. C. Pfister is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Dopant redistribution in heavily doped silicon: Confirmation of the validity of the vacancy-percolation model 1989 ·Journal of Applied Physics ·D. Mathiot, J. C. Pfister	30
2	CoSi2 and Si epitaxial growth in 〈111〉 Si submicron lines with application to a permeable base transistor 1988 ·Applied Physics Letters ·G. Glastre, E. Rosencher, F. Arnaud d’Avitaya, (unknown), M. Pons, G. Vincent, J. C. Pfister	15
3	Close spatial correlation and chemical effects in annealing of paramagnetic oxygen vacancies (E′1 centers) in ion-implanted amorphous SiO2 1986 ·Journal of Applied Physics ·A. Golański, J. C. Pfister, (unknown)	6
4	Characterization of beam-recrystallized Si films and their Si/SiO2 interfaces in silicon-on-insulator structures 1986 ·Applied Physics Letters ·D.P. Vu, J. C. Pfister	9
5	Evidences that P diffusion in Si is assisted mainly by vacancies 1985 ·Applied Physics Letters ·D. Mathiot, J. C. Pfister	14
6	Electrical Characterization of Beam—Recrystallized Soi Structures Using a Depletion Mode Transistor 1985 ·MRS Proceedings ·D.P. Vu, A. Chantre, (unknown), J. C. Pfister	2
7	Realization and electrical properties of a monolithic metal-base transistor : The Si/CoSi2/Si structure 1985 ·Physica B+C ·E. Rosencher, S.L. Delage, F. Arnaud d’Avitaya, C. d’Anterroches, (unknown), J. C. Pfister	15
8	Diffusion Mechanisms and Nonequilibrium Defects in SI 1984 ·MRS Proceedings ·D. Mathiot, J. C. Pfister	0
9	Diffusion of arsenic in silicon: Validity of the percolation model 1983 ·Applied Physics Letters ·D. Mathiot, J. C. Pfister	27
10	On the diffusion of donors into silicon: High concentration and nonequilibrium defect effects 1983 ·Physica B+C ·D. Mathiot, J. C. Pfister	4
11	High concentration diffusion of P in Si : a percolation problem ? 1982 ·Journal de Physique Lettres ·D. Mathiot, J. C. Pfister	28
12	Electrical, SEM, and TEM studies in ZnTe I. Impurity segregation during short annealings and quenching 1979 ·physica status solidi (a) ·D. Bensahel, M. Dupuy, J. C. Pfister	13
13	Electrical and optical identification of the persistent acceptor as copper in ZnTe 1979 ·Solid State Communications ·N. Magnéa, D. Bensahel, J.L. Pautrat, K. Saminadayar, J. C. Pfister	42
14	The nature of the predominant acceptors in high quality zinc telluride 1978 ·Journal of Luminescence ·P. J. Dean, H. Venghaus, J. C. Pfister, B. Schaub, Joseph E. Marine	149
15	Note on the interpretation of space charge limited currents with traps 1974 ·physica status solidi (a) ·J. C. Pfister	34
16	ÉTUDE PAR CANALISATION DES DÉFAUTS CRÉÉS PAR IMPLANTATION DANS LE ZnTe 1973 ·Le Journal de Physique Colloques ·André Bontemps, E. Ligeon, (unknown), J. C. Pfister	1
17	Electronic properties of the SiSiO2 interface as a function of oxide growth conditions. II. Fixed charge 1972 ·physica status solidi (a) ·J.L. Pautrat, J. C. Pfister	6
18	Electronic properties of the SiSiO2 interface as a function of oxide growth conditions. I. Surface states 1972 ·physica status solidi (a) ·J.L. Pautrat, J. C. Pfister	9
19	Distribution energetique des etats de surface a l'interface effet de differents traitements 1970 ·Solid State Communications ·J.L. Pautrat, J. C. Pfister	13
20	RADIATION ENHANCED DIFFUSION IN SILICON 1963 ·Journal of the Physical Society of Japan ·J. C. Pfister, P. Baruch	1

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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