Junichi Murota

2.8k total citations
206 papers, 2.2k citations indexed

About

Junichi Murota is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, Junichi Murota has authored 206 papers receiving a total of 2.2k indexed citations (citations by other indexed papers that have themselves been cited), including 197 papers in Electrical and Electronic Engineering, 74 papers in Atomic and Molecular Physics, and Optics and 62 papers in Materials Chemistry. Recurrent topics in Junichi Murota's work include Semiconductor materials and devices (125 papers), Silicon and Solar Cell Technologies (83 papers) and Thin-Film Transistor Technologies (79 papers). Junichi Murota is often cited by papers focused on Semiconductor materials and devices (125 papers), Silicon and Solar Cell Technologies (83 papers) and Thin-Film Transistor Technologies (79 papers). Junichi Murota collaborates with scholars based in Japan, Germany and Poland. Junichi Murota's co-authors include Masao Sakuraba, Takashi Matsuura, Shoichi Ono, Bernd Tillack, Tadahiro Ohmi, Yasuji Sawada, Nobuo Mikoshiba, Satoshi Nakayama, Manabu Kato and K. Yokoo and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Junichi Murota

198 papers receiving 2.1k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Junichi Murota Japan 25 2.0k 797 641 295 146 206 2.2k
Michio Tajima Japan 24 1.9k 0.9× 914 1.1× 785 1.2× 226 0.8× 175 1.2× 171 2.2k
D. Bensahel France 27 1.9k 1.0× 1.1k 1.3× 1.1k 1.7× 508 1.7× 156 1.1× 142 2.3k
H. Tanoue Japan 22 1.1k 0.6× 551 0.7× 640 1.0× 227 0.8× 241 1.7× 128 1.6k
Noriyuki Miyata Japan 23 1.7k 0.8× 752 0.9× 487 0.8× 223 0.8× 49 0.3× 116 1.9k
P. M. Amirtharaj United States 16 1.0k 0.5× 681 0.9× 561 0.9× 231 0.8× 137 0.9× 48 1.3k
S. D. Brotherton United Kingdom 27 2.3k 1.1× 819 1.0× 675 1.1× 278 0.9× 281 1.9× 83 2.4k
R. W. Fathauer United States 21 1.2k 0.6× 777 1.0× 660 1.0× 525 1.8× 90 0.6× 58 1.6k
M. Kittler Germany 25 2.3k 1.2× 1.0k 1.3× 1.2k 1.9× 476 1.6× 131 0.9× 229 2.6k
M. Servidori Italy 24 1.3k 0.6× 495 0.6× 654 1.0× 201 0.7× 399 2.7× 112 1.6k
M. C. Reuter United States 20 993 0.5× 469 0.6× 1.1k 1.8× 248 0.8× 129 0.9× 37 1.6k

Countries citing papers authored by Junichi Murota

Since Specialization
Citations

This map shows the geographic impact of Junichi Murota's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Junichi Murota with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Junichi Murota more than expected).

Fields of papers citing papers by Junichi Murota

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Junichi Murota. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Junichi Murota. The network helps show where Junichi Murota may publish in the future.

Co-authorship network of co-authors of Junichi Murota

This figure shows the co-authorship network connecting the top 25 collaborators of Junichi Murota. A scholar is included among the top collaborators of Junichi Murota based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Junichi Murota. Junichi Murota is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Murota, Junichi, et al.. (2021). Langmuir-Type Mechanism for In-Situ Doping in CVD Si and Si 1−x Ge x Epitaxial Growth. ECS Journal of Solid State Science and Technology. 10(2). 24005–24005.
2.
Yamamoto, Y., R. Kurps, Christian Mai, et al.. (2013). Phosphorus atomic layer doping in Ge using RPCVD. Solid-State Electronics. 83. 25–29. 11 indexed citations
3.
4.
Murota, Junichi, Masao Sakuraba, & Bernd Tillack. (2011). Atomically Controlled Processing in Silicon-Based CVD Epitaxial Growth. Journal of Nanoscience and Nanotechnology. 11(9). 8348–8353.
5.
6.
Kawashima, Tomoyuki, Masao Sakuraba, Bernd Tillack, & Junichi Murota. (2009). Heavy atomic-layer doping of nitrogen in Si1−Ge film epitaxially grown on Si(100) by ultraclean low-pressure CVD. Thin Solid Films. 518(6). S62–S64. 3 indexed citations
7.
Yokogawa, Takashi, et al.. (2008). Self-limited growth of Si on B atomic-layer formed Ge(100) by ultraclean low-pressure CVD system. Applied Surface Science. 254(19). 6090–6093. 2 indexed citations
8.
Sakuraba, Masao, et al.. (2008). Heavy atomic-layer doping of B in low-temperature Si epitaxial growth on Si(100) by ultraclean low-pressure chemical vapor deposition. Applied Surface Science. 254(19). 6086–6089. 7 indexed citations
9.
Tillack, Bernd, Y. Yamamoto, D. Bolze, et al.. (2005). Atomic layer processing for doping of SiGe. Thin Solid Films. 508(1-2). 279–283. 16 indexed citations
10.
Takahashi, Kazuya, et al.. (2003). Si epitaxial growth on SiH3CH3 reacted Ge(1 0 0) and intermixing between Si and Ge during heat treatment. Applied Surface Science. 212-213. 193–196. 2 indexed citations
11.
12.
Ishii, Makoto, et al.. (2002). Super self-aligned technology of ultra-shallow junction in MOSFETs using selective Si1−Ge CVD. Materials Science and Engineering B. 89(1-3). 120–124. 3 indexed citations
13.
Lee, Doohwan, et al.. (2000). Doping and electrical characteristics of in-situ heavily B-doped Si1−−Ge C films epitaxially grown using ultraclean LPCVD. Thin Solid Films. 380(1-2). 57–60. 15 indexed citations
14.
Nakajima, Koji, et al.. (1995). Hardware Implementation of New Analog Memory for Neural Networks. 78(1). 101–105. 5 indexed citations
15.
Sakuraba, Masao, Junichi Murota, Takeshi Watanabe, Yasuji Sawada, & Shoichi Ono. (1994). Atomic-layer epitaxy control of Ge and Si in flash-heating CVD using GeH4 and SiH4 gases. Applied Surface Science. 82-83. 354–358. 20 indexed citations
16.
Kohlhase, A., et al.. (1991). Selective CVD of germanium on silicon and its applications. Vacuum. 42(4). 269–272. 3 indexed citations
17.
Matsuura, Takashi, Tadahiro Ohmi, Junichi Murota, et al.. (1990). Directional etching of Si with perfect selectivity to SiO2 using an ultraclean electron cyclotron resonance plasma. Applied Physics Letters. 56(14). 1339–1341. 25 indexed citations
18.
Miyake, Masayasu, et al.. (1990). Cross‐Sectional TEM Observation of Process‐Induced Defects in Heavily Arsenic‐Diffused Silicon Layers. Journal of The Electrochemical Society. 137(1). 318–322. 7 indexed citations
19.
Murota, Junichi, Eisuke Arai, Kenji Kobayashi, & Kiyoshi Kudo. (1978). Aresnic Diffusion in Silicon from Doped Polycrystalline Silicon. Japanese Journal of Applied Physics. 17(2). 457–458. 10 indexed citations
20.
Sakai, T., et al.. (1976). Stepped Electrode Transistor : SET. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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