І. П. Сошніков

1.3k total citations
70 papers, 975 citations indexed

About

І. П. Сошніков is a scholar working on Biomedical Engineering, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, І. П. Сошніков has authored 70 papers receiving a total of 975 indexed citations (citations by other indexed papers that have themselves been cited), including 49 papers in Biomedical Engineering, 39 papers in Electrical and Electronic Engineering and 30 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in І. П. Сошніков's work include Nanowire Synthesis and Applications (44 papers), Semiconductor Quantum Structures and Devices (21 papers) and GaN-based semiconductor devices and materials (19 papers). І. П. Сошніков is often cited by papers focused on Nanowire Synthesis and Applications (44 papers), Semiconductor Quantum Structures and Devices (21 papers) and GaN-based semiconductor devices and materials (19 papers). І. П. Сошніков collaborates with scholars based in Russia, Germany and Finland. І. П. Сошніков's co-authors include G. É. Cirlin, В. Г. Дубровский, N. V. Sibirev, V. M. Ustinov, Yu. B. Samsonenko, A. A. Tonkikh, A. D. Bouravleuv, А. В. Осипов, С. А. Кукушкін and R. R. Reznik and has published in prestigious journals such as SHILAP Revista de lepidopterología, Nano Letters and Applied Physics Letters.

In The Last Decade

І. П. Сошніков

66 papers receiving 953 citations

Peers

І. П. Сошніков

EEE

AMPO

CMP

K. Haraguchi Japan

V. P. Ulin Russia

C. Robert‐Goumet France

D L Dheeraj Norway

Anna Marzegalli Italy

V. I. Mashanov Russia

Yuki Tokumoto Japan

P. C. Colter United States

Koichi Sudoh Japan

Masashi Kurosawa Japan

K. Haraguchi Japan

І. П. Сошніков

878 ×1.2

641 ×1.1

EEE

513 ×1.1

404 ×1.1

AMPO

101 ×0.7

CMP

Citations per year, relative to І. П. Сошніков І. П. Сошніков (= 1×) peers K. Haraguchi

Countries citing papers authored by І. П. Сошніков

Since Specialization

Citations

This map shows the geographic impact of І. П. Сошніков's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by І. П. Сошніков with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites І. П. Сошніков more than expected).

Fields of papers citing papers by І. П. Сошніков

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by І. П. Сошніков. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by І. П. Сошніков. The network helps show where І. П. Сошніков may publish in the future.

Co-authorship network of co-authors of І. П. Сошніков

This figure shows the co-authorship network connecting the top 25 collaborators of І. П. Сошніков. A scholar is included among the top collaborators of І. П. Сошніков based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with І. П. Сошніков. І. П. Сошніков is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Shtrom, I. V., N. V. Sibirev, І. П. Сошніков, et al.. (2024). Lead Catalyzed GaAs Nanowires Grown by Molecular Beam Epitaxy. Nanomaterials. 14(23). 1860–1860.

Shamakhov, V. V., S. O. Slipchenko, D. N. Nikolaev, et al.. (2023). Features of Metalorganic Chemical Vapor Deposition Selective Area Epitaxy of AlzGa1−zAs (0 ≤ z ≤ 0.3) Layers in Arrays of Ultrawide Windows. SHILAP Revista de lepidopterología. 11(4). 89–89. 1 indexed citations

Kotlyar, K. P., et al.. (2021). Multi-colour light emission from InGaN nanowires monolithically grown on Si substrate by MBE. Nanotechnology. 32(33). 335604–335604. 14 indexed citations

Kotlyar, K. P., Demid A. Kirilenko, А. В. Осипов, et al.. (2021). Formation of Hexagonal Ge Stripes on the Side Facets of AlGaAs Nanowires: Implications for Near-Infrared Detectors. ACS Applied Nano Materials. 4(7). 7289–7294. 1 indexed citations

Vlasov, A. S., et al.. (2019). Ga(In)AsP Lateral Nanostructures as the Optical Component of GaAs-Based Photovoltaic Converters. Semiconductors. 53(12). 1705–1708. 2 indexed citations

Kotlyar, K. P., et al.. (2018). Temperature annealing effect on ITO film. Journal of Physics Conference Series. 1124. 41035–41035. 2 indexed citations

Кукушкін, С. А., et al.. (2018). Heteroepitaxy Growth of SiC on the Substrates of Porous Si Method of Substitution of Atoms. Journal of Nano- and Electronic Physics. 10(3). 3026–1. 1 indexed citations

Alekseev, P. A., Pavel Geydt, M. S. Dunaevskiy, et al.. (2017). Piezoelectric Current Generation in Wurtzite GaAs Nanowires. physica status solidi (RRL) - Rapid Research Letters. 12(1). 22 indexed citations

Bouravleuv, A. D., R. R. Reznik, I. V. Shtrom, et al.. (2017). MBE growth of nanowires using colloidal Ag nanoparticles. Journal of Physics Conference Series. 864. 12010–12010. 2 indexed citations

10.

Bouravleuv, A. D., R. R. Reznik, K. P. Kotlyar, et al.. (2017). New method for MBE growth of GaAs nanowires on silicon using colloidal Au nanoparticles. Nanotechnology. 29(4). 45602–45602. 7 indexed citations

11.

Bouravleuv, A. D., G. É. Cirlin, R. R. Reznik, et al.. (2016). Growth and properties of self‐catalyzed (In,Mn)As nanowires. physica status solidi (RRL) - Rapid Research Letters. 10(7). 554–557. 2 indexed citations

12.

Reznik, R. R., K. P. Kotlyar, І. П. Сошніков, et al.. (2016). Growth and optical properties of filamentary GaN nanocrystals grown on a hybrid SiC/Si(111) substrate by molecular beam epitaxy. Physics of the Solid State. 58(10). 1952–1955. 7 indexed citations

13.

Лысак, В.В., І. П. Сошніков, E. Lähderanta, & G. É. Cirlin. (2016). Piezoelectric effect in wurtzite GaAs nanowires: Growth, characterization, and electromechanical 3D modeling. physica status solidi (a). 213(11). 3014–3019. 7 indexed citations

14.

Reznik, R. R., K. P. Kotlyar, А. И. Хребтов, et al.. (2015). Development of methods for orderly growth of nanowires. Journal of Physics Conference Series. 661. 12053–12053. 1 indexed citations

15.

Cirlin, G. É., A. D. Bouravleuv, І. П. Сошніков, et al.. (2009). Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate. Nanoscale Research Letters. 5(2). 360–3. 41 indexed citations

16.

Сошніков, І. П., G. É. Cirlin, N. V. Sibirev, et al.. (2008). Hexagonal structures in GaAs nanowhiskers. Technical Physics Letters. 34(6). 538–541. 10 indexed citations

17.

Сошніков, І. П., et al.. (2007). Electron diffraction on GaAs nanowhiskers grown on Si(100) and Si(111) substrates by molecular-beam epitaxy. Physics of the Solid State. 49(8). 1440–1445. 11 indexed citations

18.

Sibirev, N. V., et al.. (2006). Temperature profile along a nanowhisker growing in high vacuum. Technical Physics Letters. 32(4). 292–295. 8 indexed citations

19.

Дубровский, В. Г., N. V. Sibirev, G. É. Cirlin, et al.. (2005). <title>GaAs nanowhiskers grown by molecular beam epitaxy on GaAs(111)B surface activated by Au: theory and experiment</title>. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 594611–594611. 1 indexed citations

20.

Cirlin, G. É., В. Г. Дубровский, N. V. Sibirev, et al.. (2005). The diffusion mechanism in the formation of GaAs and AlGaAs nanowhiskers during the process of molecular-beam epitaxy. Semiconductors. 39(5). 557–564. 40 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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