D. A. Vinokurov

1.1k citations

73 papers · 799 indexed · h-index 16

Atomic and Molecular Physics, and Optics top 5%
- Semiconductor Quantum Structures and Devices 61
- Semiconductor materials and interfaces 15
Electrical and Electronic Engineering top 5%
- Semiconductor Lasers and Optical Devices 40
- Photonic and Optical Devices 22
- Semiconductor materials and devices 9
- Solid State Laser Technologies 6
Instrumentation top 10%
Condensed Matter Physics top 10%
- GaN-based semiconductor devices and materials 7
Surfaces, Coatings and Films
Materials Chemistry
- Quantum Dots Synthesis And Properties 8

Co-authors: I. S. Tarasov N. A. Pikhtin S. O. Slipchenko A. L. Stankevich Z. N. Sokolova П. В. Середин I. N. Arsentyev É. P. Domashevskaya
Cited by: Atomic and Molecular Physics, and Optics Electrical and Electronic Engineering Instrumentation
Journals: Physical Review B (1 paper)Applied Surface Science (1 paper)Electronics Letters (1 paper)
Partner nations: Russia Mexico Germany

In The Last Decade

D. A. Vinokurov

70 papers receiving 782 citations

Peers

Countries citing papers authored by D. A. Vinokurov

Since Specialization

Citations

This map shows the geographic impact of D. A. Vinokurov's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. A. Vinokurov with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. A. Vinokurov more than expected).

Fields of papers citing papers by D. A. Vinokurov

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. A. Vinokurov. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. A. Vinokurov. The network helps show where D. A. Vinokurov may publish in the future.

Co-authorship network

The 25 scholars most cited alongside D. A. Vinokurov, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with D. A. Vinokurov Line = papers co-authored together D. A. Vinokurov links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Structural and optical properties of heavily doped Al x Ga1 − x As1 − y P y :Mg alloys produced by metal-organic chemical vapor deposition Semiconductors ·П. В. Середин,A. S. Lenshin,А. В. Глотов,I. N. Arsentyev,D. A. Vinokurov,I. S. Tarasov,T. Prutskij,H. Leiste,Monika Rinke	2014	7
2	Structure and optical properties of heterostructures based on MOCVD (Al x Ga1 − x As1 − y P y )1 − z Si z alloys Semiconductors ·П. В. Середин,А. В. Глотов,A. S. Lenshin,I. N. Arsentyev,D. A. Vinokurov,T. Prutskij,H. Leiste,Monica Rinke	2014	22
3	Temperature dependence of the threshold current density in semiconductor lasers (λ = 1050–1070 nm) Semiconductors ·I. S. Shashkin,D. A. Vinokurov,A. V. Lyutetskiy,D. N. Nikolaev,N. A. Pikhtin,N. A. Rudova,Z. N. Sokolova,S. O. Slipchenko,A. L. Stankevich,V. V. Shamakhov,D. A. Veselov,K. V. Bakhvalov,I. S. Tarasov	2012	10
4	Chemical characterization of extra layers at the interfaces in MOCVD InGaP/GaAs junctions by electron beam methods Nanoscale Research Letters ·C. Frigeri,Alexey A. Shakhmin,D. A. Vinokurov,M. V. Zamoryanskaya	2011	4
5	Diode lasers emitting at 1190 nm with a highly strained GaInAs quantum well and GaAsP compensating layers MOCVD-grown on a GaAs substrate Semiconductors ·D. A. Vinokurov,D. N. Nikolaev,N. A. Pikhtin,A. L. Stankevich,V. V. Shamakhov,A. D. Bondarev,N. A. Rudova,I. S. Tarasov	2011	6
6	Raman investigation of low temperature AlGaAs/GaAs(100) heterostructures Physica B Condensed Matter ·П. В. Середин,А. В. Глотов,É. P. Domashevskaya,I. N. Arsentyev,D. A. Vinokurov,I. S. Tarasov	2010	20
7	Phase formation under the effect of spinodal decomposition in epitaxial alloys of Ga x In1 − x P/GaAs(100) heterostructures Semiconductors ·П. В. Середин,É. P. Domashevskaya,Val. E. Rudneva,Val. E. Rudneva,N. N. Gordienko,А. В. Глотов,I. N. Arsentyev,D. A. Vinokurov,A. L. Stankevich,I. S. Tarasov	2009	5
8	A study of GaAs: Si/GaAs: C tunnel diodes grown by MOCVD Semiconductors ·D. A. Vinokurov,М. А. Ладугин,А. А. Маrmalyuk,А. А. Падалица,N. A. Pikhtin,В. А. Симаков,A V Sukharev,N. V. Fetisova,V. V. Shamakhov,I. S. Tarasov	2009	5
9	Study of optical characteristics of structures with strongly strained In x Ga1 − x As quantum wells Semiconductors ·D. A. Vinokurov,V. A. Kapitonov,D. N. Nikolaev,Z. N. Sokolova,A. L. Stankevich,V. V. Shamakhov,I. S. Tarasov	2009	1
10	Switching between generation of two quantum states in quantum-well laser diodes Technical Physics Letters ·G. S. Sokolovskiĭ,D. A. Vinokurov,A. G. Deryagin,V. V. Dudelev,V. I. Kuchinskiĭ,S. N. Losev,A. V. Lyutetskiĭ,N. A. Pikhtin,S. O. Slipchenko,Z. N. Sokolova,I. S. Tarasov	2008	8
11	High-power external-cavity AlGaAs/GaAs/InGaAs quantum-dimensional heterolasers (λ = 1.06 μm) Technical Physics Letters ·D. A. Vinokurov,A. G. Deryagin,V. V. Dyudelev,V. I. Kuchinskiĭ,A. V. Lyutetskiĭ,N. A. Pikhtin,G. S. Sokolovskiĭ,A. L. Stankevich,I. S. Tarasov	2008	3
12	Double-band generation in InGaAs/GaAs diode laser at high pulsed current pumping Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·K. S. Borschev,N. A. Pikhtin,S. O. Slipchenko,Z. N. Sokolova,D. A. Vinokurov,I. N. Arsentyev,I. S. Tarasov	2007	5
13	XRD, AFM and IR investigations of ordered AlGaAs ₂ phase in epitaxial Al _x Ga _{1– x} As/GaAs (100) heterostructures Surface and Interface Analysis ·É. P. Domashevskaya,П. В. Середин,А. Н. Лукин,L. A. Bityutskaya,M. V. Grechkina,I. N. Arsentyev,D. A. Vinokurov,I. S. Tarasov	2006	19
14	High power CW (16W) and pulse (145W) laser diodes based on quantum well heterostructures Spectrochimica Acta Part A Molecular and Biomolecular Spectroscopy ·I. S. Tarasov,N. A. Pikhtin,S. O. Slipchenko,Z. N. Sokolova,D. A. Vinokurov,K. S. Borschev,Vladimir Kapitonov,M. A. Khomylev,A. Yu. Leshko,Andrey V. Lyutetskiy,Alexey L. Stankevich	2006	32
15	High-power lasers (λ = 940–980 nm) based on asymmetric GaInAs/GaInAsP/AlGaAs separate-confinement heterostructure Semiconductors ·D. A. Vinokurov,A. L. Stankevich,V. V. Shamakhov,V. A. Kapitonov,A. Yu. Leshko,A. V. Lyutetskiĭ,D. N. Nikolaev,N. A. Pikhtin,N. A. Rudova,Z. N. Sokolova,S. O. Slipchenko,M. A. Khomylev,I. S. Tarasov	2006	4
16	Photoluminescence of heterostructures with highly strained Ga0.76In0.24As quantum wells separated by GaAsyP1−y compensating barriers Technical Physics Letters ·V. V. Shamakhov,D. A. Vinokurov,A. L. Stankevich,V. A. Kapitonov,S. A. Zorina,D. N. Nikolaev,A. V. Murashova,A. D. Bondarev,I. S. Tarasov	2005	3
17	Vegard’s law and superstructural phases in AlxGa1−x As/GaAs(100) epitaxial heterostructures Semiconductors ·É. P. Domashevskaya,П. В. Середин,Ekaterina A. Dolgopolova,Igor E. Zanin,И. Н. Арсентьев,D. A. Vinokurov,A. L. Stankevich,I. S. Tarasov	2005	6
18	High-power laser diodes based on asymmetric separate-confinement heterostructures Semiconductors ·D. A. Vinokurov,S. A. Zorina,V. A. Kapitonov,A. V. Murashova,D. N. Nikolaev,A. L. Stankevich,M. A. Khomylev,V. V. Shamakhov,A. Yu. Leshko,A. V. Lyutetskiĭ,T. A. Nalyot,N. A. Pikhtin,S. O. Slipchenko,Z. N. Sokolova,N. V. Fetisova,I. S. Tarasov	2005	33
19	Nanoindentation and near-field spectroscopy of single semiconductor quantum dots Physical Review B ·A. M. Mintairov,Kai Sun,J. L. Merz,C. Li,A. S. Vlasov,D. A. Vinokurov,O. V. Kovalenkov,Vadim Tokranov,S. Oktyabrsky	2004	25
20	Optical study of InP quantum dots Semiconductors ·D. A. Vinokurov,V. A. Kapitonov,D. N. Nikolaev,Z. N. Sokolova,I. S. Tarasov	2001	2

About D. A. Vinokurov

D. A. Vinokurov is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Condensed Matter Physics, having authored 73 papers that have together received 799 indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (61 papers), Semiconductor Lasers and Optical Devices (40 papers), Photonic and Optical Devices (22 papers), Semiconductor materials and interfaces (15 papers), Semiconductor materials and devices (9 papers), Quantum Dots Synthesis And Properties (8 papers), GaN-based semiconductor devices and materials (7 papers) and Solid State Laser Technologies (6 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (624 citations), Electrical and Electronic Engineering (663 citations) and Instrumentation (28 citations). D. A. Vinokurov has collaborated with scholars based in Russia, Mexico and Germany. Frequent co-authors include I. S. Tarasov, N. A. Pikhtin, S. O. Slipchenko, A. L. Stankevich, Z. N. Sokolova, П. В. Середин, I. N. Arsentyev, É. P. Domashevskaya, Zh. I. Alfërov and V. V. Shamakhov. Their work appears in journals such as Physical Review B, Applied Surface Science and Electronics Letters.

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