A. L. Stankevich

514 total citations
36 papers, 419 citations indexed

About

A. L. Stankevich is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Condensed Matter Physics. According to data from OpenAlex, A. L. Stankevich has authored 36 papers receiving a total of 419 indexed citations (citations by other indexed papers that have themselves been cited), including 34 papers in Atomic and Molecular Physics, and Optics, 31 papers in Electrical and Electronic Engineering and 6 papers in Condensed Matter Physics. Recurrent topics in A. L. Stankevich's work include Semiconductor Quantum Structures and Devices (32 papers), Semiconductor Lasers and Optical Devices (25 papers) and Photonic and Optical Devices (16 papers). A. L. Stankevich is often cited by papers focused on Semiconductor Quantum Structures and Devices (32 papers), Semiconductor Lasers and Optical Devices (25 papers) and Photonic and Optical Devices (16 papers). A. L. Stankevich collaborates with scholars based in Russia, Mexico and South Korea. A. L. Stankevich's co-authors include D. A. Vinokurov, I. S. Tarasov, N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, Zh. I. Alfërov, П. В. Середин, V. V. Shamakhov, I. N. Arsentyev and D. N. Nikolaev and has published in prestigious journals such as Applied Physics Letters, Electronics Letters and Superlattices and Microstructures.

In The Last Decade

A. L. Stankevich

35 papers receiving 405 citations

Peers

Countries citing papers authored by A. L. Stankevich

Since Specialization

Citations

This map shows the geographic impact of A. L. Stankevich's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. L. Stankevich with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. L. Stankevich more than expected).

Fields of papers citing papers by A. L. Stankevich

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. L. Stankevich. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. L. Stankevich. The network helps show where A. L. Stankevich may publish in the future.

Co-authorship network of co-authors of A. L. Stankevich

This figure shows the co-authorship network connecting the top 25 collaborators of A. L. Stankevich. A scholar is included among the top collaborators of A. L. Stankevich based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. L. Stankevich. A. L. Stankevich is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Superstructured ordering in Al x Ga1 − x As and Ga x In1 − x P alloys 2013 ·Semiconductors ·П. В. Середин, (unknown), I. N. Arsentyev, D. A. Vinokurov, A. L. Stankevich, T. Prutskij	16
2	Temperature dependence of the threshold current density in semiconductor lasers (λ = 1050–1070 nm) 2012 ·Semiconductors ·(unknown), D. A. Vinokurov, (unknown), D. N. Nikolaev, N. A. Pikhtin, (unknown), Z. N. Sokolova, S. O. Slipchenko, A. L. Stankevich, V. V. Shamakhov, (unknown), (unknown), I. S. Tarasov	10
3	Diode lasers emitting at 1190 nm with a highly strained GaInAs quantum well and GaAsP compensating layers MOCVD-grown on a GaAs substrate 2011 ·Semiconductors ·D. A. Vinokurov, D. N. Nikolaev, N. A. Pikhtin, A. L. Stankevich, V. V. Shamakhov, (unknown), (unknown), I. S. Tarasov	6
4	Temperature delocalization of charge carriers in semiconductor lasers 2010 ·Semiconductors ·S. O. Slipchenko, (unknown), (unknown), D. A. Vinokurov, (unknown), N. A. Pikhtin, A. A. Podoskin, A. L. Stankevich, (unknown), I. S. Tarasov	11
5	InGaAs/GaAs/AlGaAs lasers emitting at a wavelength of 1190 nm grown by MOCVD epitaxy on GaAs substrate 2010 ·Semiconductors ·D. A. Vinokurov, D. N. Nikolaev, N. A. Pikhtin, A. L. Stankevich, V. V. Shamakhov, M. G. Rastegaeva, A. V. Rozhkov, I. S. Tarasov	4
6	Phase formation under the effect of spinodal decomposition in epitaxial alloys of Ga x In1 − x P/GaAs(100) heterostructures 2009 ·Semiconductors ·П. В. Середин, É. P. Domashevskaya, (unknown), (unknown), (unknown), (unknown), I. N. Arsentyev, D. A. Vinokurov, A. L. Stankevich, I. S. Tarasov	5
7	Study of optical characteristics of structures with strongly strained In x Ga1 − x As quantum wells 2009 ·Semiconductors ·D. A. Vinokurov, V. A. Kapitonov, D. N. Nikolaev, Z. N. Sokolova, A. L. Stankevich, V. V. Shamakhov, I. S. Tarasov	1
8	Structural and optical properties of low-temperature hydride-MOCVD AlGaAs/GaAs(100) heterostructures based on omission solid solutions 2009 ·Semiconductors ·П. В. Середин, (unknown), É. P. Domashevskaya, I. N. Arsentyev, D. A. Vinokurov, A. L. Stankevich, I. S. Tarasov	7
9	Quenching of lasing in high power semiconductor laser 2009 ·Semiconductors ·S. O. Slipchenko, D. A. Vinokurov, (unknown), N. A. Pikhtin, A. L. Stankevich, (unknown), (unknown), I. S. Tarasov	9
10	High-power external-cavity AlGaAs/GaAs/InGaAs quantum-dimensional heterolasers (λ = 1.06 μm) 2008 ·Technical Physics Letters ·D. A. Vinokurov, (unknown), (unknown), V. I. Kuchinskiĭ, A. V. Lyutetskiĭ, N. A. Pikhtin, G. S. Sokolovskiĭ, A. L. Stankevich, I. S. Tarasov	3
11	High-power laser diodes with an emission wavelength of 835 nm on the basis of various types of heterostructures 2008 ·Semiconductors ·(unknown), D. A. Vinokurov, N. A. Pikhtin, S. O. Slipchenko, V. V. Shamakhov, (unknown), V. A. Kapitonov, A. Yu. Leshko, (unknown), (unknown), D. N. Nikolaev, A. L. Stankevich, (unknown), I. S. Tarasov, (unknown), Donghoon Kang, (unknown)	6
12	High-power laser diodes of wavelength 808 nm based on various types of asymmetric heterostructures with an ultrawide waveguide 2008 ·Semiconductors ·(unknown), (unknown), D. A. Vinokurov, V. A. Kapitonov, О. Н. Крохин, A. Yu. Leshko, A. V. Lyutetskiĭ, (unknown), (unknown), D. N. Nikolaev, N. A. Pikhtin, Yu. M. Popov, S. O. Slipchenko, A. L. Stankevich, (unknown), V. V. Shamakhov, I. S. Tarasov	6
13	Double-band generation in quantum-well semiconductor laser at high injection levels 2007 ·Semiconductors ·D. A. Vinokurov, (unknown), V. A. Kapitonov, A. Yu. Leshko, A. V. Lyutetskiĭ, (unknown), D. N. Nikolaev, N. A. Pikhtin, (unknown), S. O. Slipchenko, Z. N. Sokolova, A. L. Stankevich, (unknown), (unknown), V. V. Shamakhov, (unknown), (unknown), (unknown), (unknown), I. S. Tarasov	3
14	Saturation of light-current characteristics of high-power laser diodes (λ = 1.0–1.8 μm) under pulse operation 2007 ·Semiconductors ·D. A. Vinokurov, V. A. Kapitonov, A. V. Lyutetskiĭ, N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, A. L. Stankevich, (unknown), V. V. Shamakhov, (unknown), (unknown), I. S. Tarasov	12
15	High-power lasers (λ = 940–980 nm) based on asymmetric GaInAs/GaInAsP/AlGaAs separate-confinement heterostructure 2006 ·Semiconductors ·D. A. Vinokurov, A. L. Stankevich, V. V. Shamakhov, V. A. Kapitonov, A. Yu. Leshko, A. V. Lyutetskiĭ, D. N. Nikolaev, N. A. Pikhtin, (unknown), Z. N. Sokolova, S. O. Slipchenko, (unknown), I. S. Tarasov	4
16	Photoluminescence of heterostructures with highly strained Ga0.76In0.24As quantum wells separated by GaAsyP1−y compensating barriers 2005 ·Technical Physics Letters ·V. V. Shamakhov, D. A. Vinokurov, A. L. Stankevich, V. A. Kapitonov, (unknown), D. N. Nikolaev, (unknown), (unknown), I. S. Tarasov	3
17	Vegard’s law and superstructural phases in AlxGa1−x As/GaAs(100) epitaxial heterostructures 2005 ·Semiconductors ·É. P. Domashevskaya, П. В. Середин, Ekaterina A. Dolgopolova, (unknown), (unknown), D. A. Vinokurov, A. L. Stankevich, I. S. Tarasov	6
18	High-power laser diodes based on asymmetric separate-confinement heterostructures 2005 ·Semiconductors ·D. A. Vinokurov, (unknown), V. A. Kapitonov, (unknown), D. N. Nikolaev, A. L. Stankevich, (unknown), V. V. Shamakhov, A. Yu. Leshko, A. V. Lyutetskiĭ, (unknown), N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, (unknown), I. S. Tarasov	33
19	Ultralow internal optical loss in separate-confinement quantum-well laser heterostructures 2004 ·Semiconductors ·S. O. Slipchenko, D. A. Vinokurov, N. A. Pikhtin, Z. N. Sokolova, A. L. Stankevich, I. S. Tarasov, Zh. I. Alfërov	61
20	High-power broad-band single-mode InGaAsP/InP superluminescent diode 1999 ·Technical Physics Letters ·N. A. Pikhtin, (unknown), A. Yu. Leshko, A. V. Lyutetskiĭ, A. L. Stankevich, I. S. Tarasov, (unknown)	3

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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