Yuichi Onozawa

704 total citations
45 papers, 562 citations indexed

About

Yuichi Onozawa is a scholar working on Electrical and Electronic Engineering, Mechanical Engineering and Condensed Matter Physics. According to data from OpenAlex, Yuichi Onozawa has authored 45 papers receiving a total of 562 indexed citations (citations by other indexed papers that have themselves been cited), including 45 papers in Electrical and Electronic Engineering, 8 papers in Mechanical Engineering and 3 papers in Condensed Matter Physics. Recurrent topics in Yuichi Onozawa's work include Silicon Carbide Semiconductor Technologies (39 papers), Electrostatic Discharge in Electronics (12 papers) and Advancements in Semiconductor Devices and Circuit Design (12 papers). Yuichi Onozawa is often cited by papers focused on Silicon Carbide Semiconductor Technologies (39 papers), Electrostatic Discharge in Electronics (12 papers) and Advancements in Semiconductor Devices and Circuit Design (12 papers). Yuichi Onozawa collaborates with scholars based in Japan, Hong Kong and Germany. Yuichi Onozawa's co-authors include M. Otsuki, Y. Seki, J.K.O. Sin, Hao Feng, Takashi Matsumoto, Takeshi Yoshimura, Hiroki Nakano, K. Yoshikawa, Yong Liu and Noriyuki Iwamuro and has published in prestigious journals such as IEEE Transactions on Industry Applications, IEEE Transactions on Electron Devices and Solar Energy Materials and Solar Cells.

In The Last Decade

Yuichi Onozawa

44 papers receiving 524 citations

Peers

Yuichi Onozawa
J. Urresti Spain
Iulian Nistor Switzerland
Peter A. Losee United States
Zhizhao Huang China
Benjamin Wrzecionko Switzerland
Xueqian Zhong China
Adam J. Morgan United States
Hongyi Xu China
Chi Xu United States
Phil Rutter United Kingdom
J. Urresti Spain
Yuichi Onozawa
Citations per year, relative to Yuichi Onozawa Yuichi Onozawa (= 1×) peers J. Urresti

Countries citing papers authored by Yuichi Onozawa

Since Specialization
Citations

This map shows the geographic impact of Yuichi Onozawa's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yuichi Onozawa with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yuichi Onozawa more than expected).

Fields of papers citing papers by Yuichi Onozawa

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yuichi Onozawa. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yuichi Onozawa. The network helps show where Yuichi Onozawa may publish in the future.

Co-authorship network of co-authors of Yuichi Onozawa

This figure shows the co-authorship network connecting the top 25 collaborators of Yuichi Onozawa. A scholar is included among the top collaborators of Yuichi Onozawa based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Yuichi Onozawa. Yuichi Onozawa is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Liu, Yong, et al.. (2022). Static Performance and Threshold Voltage Stability Improvement of Al2O3/LaAlO3/SiO2Gate-Stack for SiC Power MOSFETs. IEEE Transactions on Electron Devices. 69(2). 690–695. 9 indexed citations
2.
Liu, Yong, et al.. (2019). Design and Characterization of the Deep-Trench, U-Shaped Field-Plate Edge Termination for 1200-V-Class SiC Devices. IEEE Transactions on Electron Devices. 66(10). 4251–4257. 11 indexed citations
3.
Liu, Yong, et al.. (2019). Trench Field Plate Engineering for High Efficient Edge Termination of 1200 V-class SiC Devices. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 143–146. 5 indexed citations
4.
5.
Onozawa, Yuichi, et al.. (2017). Study of the electrostatic potential of the floating-p region during the turn-on period of IGBT. 123–126. 8 indexed citations
6.
Feng, Hao, et al.. (2016). Design and Characterization of Sloped-Field-Plate Enhanced Trench Edge Termination. IEEE Transactions on Electron Devices. 64(3). 728–734. 8 indexed citations
7.
Feng, Hao, et al.. (2016). A 1200 V-class Fin P-body IGBT with ultra-narrow-mesas for low conduction loss. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 203–206. 22 indexed citations
8.
Heinzel, T., et al.. (2015). The new high power density 7th generation IGBT module for compact power conversion systems. 1–9. 7 indexed citations
9.
Sugimura, Kazuyuki, et al.. (2015). Ultra low miller capacitance trench-gate IGBT with the split gate structure. 25–28. 24 indexed citations
10.
11.
Heinzel, T., et al.. (2015). The compact and high power density 7th generation IGBT module. 1–10. 1 indexed citations
12.
Feng, Hao, et al.. (2015). A New Fin p-Body Insulated Gate Bipolar Transistor With Low Miller Capacitance. IEEE Electron Device Letters. 36(6). 591–593. 31 indexed citations
13.
14.
Onozawa, Yuichi, et al.. (2011). Development of the next generation 1700V trench-gate FS-IGBT. 52–55. 5 indexed citations
15.
Onozawa, Yuichi, et al.. (2010). A 600V super low loss IGBT with advanced micro-P structure for the next generation IPM. 379–382. 10 indexed citations
16.
Onozawa, Yuichi, et al.. (2010). A 600V Super Low Loss IGBT with Advanced Micro-P Structure for the next Generation IPM. 2010(99). 1–4. 7 indexed citations
17.
Yamazaki, Tomoyuki, et al.. (2010). Advanced IGBT chip technology for industrial motor drive applications. 783–789. 2 indexed citations
18.
19.
Onozawa, Yuichi, M. Otsuki, & Y. Seki. (2006). Investigation of carrier streaming effect for the low spike fast IGBT turn-off. 1–4. 24 indexed citations
20.
Iwamuro, Noriyuki, et al.. (2002). A new concept for high voltage MCCT with no J-FET resistance by using a very thin wafer. 351–354. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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