Chantal Fontaine

525 total citations
32 papers, 356 citations indexed

About

Chantal Fontaine is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Condensed Matter Physics. According to data from OpenAlex, Chantal Fontaine has authored 32 papers receiving a total of 356 indexed citations (citations by other indexed papers that have themselves been cited), including 23 papers in Atomic and Molecular Physics, and Optics, 22 papers in Electrical and Electronic Engineering and 8 papers in Condensed Matter Physics. Recurrent topics in Chantal Fontaine's work include Semiconductor Quantum Structures and Devices (18 papers), Photonic and Optical Devices (7 papers) and Advanced Semiconductor Detectors and Materials (6 papers). Chantal Fontaine is often cited by papers focused on Semiconductor Quantum Structures and Devices (18 papers), Photonic and Optical Devices (7 papers) and Advanced Semiconductor Detectors and Materials (6 papers). Chantal Fontaine collaborates with scholars based in France, Türkiye and Switzerland. Chantal Fontaine's co-authors include Alexandre Arnoult, X. Marie, S. Mazzucato, H. Carrère, T. Amand, Ömer Dönmez, Ayşe Erol, Pascal Dubreuil, F. Carcenac and A. Rocher and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Physical Review B.

In The Last Decade

Chantal Fontaine

32 papers receiving 346 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Chantal Fontaine France 12 246 238 95 80 62 32 356
V. P. Evtikhiev Russia 12 368 1.5× 282 1.2× 133 1.4× 89 1.1× 91 1.5× 83 461
A. N. Pikhtin Russia 11 252 1.0× 251 1.1× 97 1.0× 56 0.7× 52 0.8× 32 356
B. Ściana Poland 11 277 1.1× 284 1.2× 58 0.6× 75 0.9× 89 1.4× 76 377
T. Katsuyama Japan 13 352 1.4× 433 1.8× 84 0.9× 48 0.6× 42 0.7× 44 492
C. Anayama Japan 11 295 1.2× 303 1.3× 71 0.7× 40 0.5× 73 1.2× 25 378
G. DeSalvo United States 10 204 0.8× 404 1.7× 80 0.8× 104 1.3× 52 0.8× 35 452
A. Sacedón Spain 13 408 1.7× 324 1.4× 103 1.1× 69 0.9× 128 2.1× 38 450
N. Hayafuji Japan 12 355 1.4× 410 1.7× 75 0.8× 61 0.8× 66 1.1× 40 468
H. Thomas United Kingdom 12 275 1.1× 358 1.5× 65 0.7× 32 0.4× 96 1.5× 46 411
А. В. Соломонов Russia 9 389 1.6× 361 1.5× 174 1.8× 82 1.0× 98 1.6× 45 518

Countries citing papers authored by Chantal Fontaine

Since Specialization
Citations

This map shows the geographic impact of Chantal Fontaine's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Chantal Fontaine with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Chantal Fontaine more than expected).

Fields of papers citing papers by Chantal Fontaine

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Chantal Fontaine. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Chantal Fontaine. The network helps show where Chantal Fontaine may publish in the future.

Co-authorship network of co-authors of Chantal Fontaine

This figure shows the co-authorship network connecting the top 25 collaborators of Chantal Fontaine. A scholar is included among the top collaborators of Chantal Fontaine based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Chantal Fontaine. Chantal Fontaine is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Hui, V., Alexandre Arnoult, P. Besson, et al.. (2022). Transfer of an AlGaAs/GaAs crystalline Bragg mirror from a GaAs substrate to a fused silica substrate by direct bonding. HAL (Le Centre pour la Communication Scientifique Directe). 20–20. 1 indexed citations
2.
Arnoult, Alexandre, et al.. (2019). Links between bismuth incorporation and surface reconstruction during GaAsBi growth probed by in situ measurements. Journal of Applied Physics. 126(9). 11 indexed citations
3.
Calvez, S., et al.. (2017). Low-loss buried AlGaAs/AlOx waveguides using a quasi-planar process. Optics Express. 25(16). 19275–19275. 4 indexed citations
4.
Dönmez, Ömer, et al.. (2016). Thermal annealing effects on optical and structural properties of GaBiAs epilayers: Origin of the thermal annealing-induced redshift in GaBiAs. Journal of Alloys and Compounds. 686. 976–981. 15 indexed citations
5.
Mazzucato, S., Alexandre Arnoult, Teresa Hungrı́a, et al.. (2014). Molecular beam epitaxy and properties of GaAsBi/GaAs quantum wells grown by molecular beam epitaxy: effect of thermal annealing. Nanoscale Research Letters. 9(1). 123–123. 19 indexed citations
6.
Sarcan, Fahrettin, Ömer Dönmez, Ayşe Erol, et al.. (2014). Bismuth-induced effects on optical, lattice vibrational, and structural properties of bulk GaAsBi alloys. Nanoscale Research Letters. 9(1). 119–119. 32 indexed citations
7.
Broderick, Christopher A., S. Mazzucato, H. Carrère, et al.. (2014). Anisotropic electrongfactor as a probe of the electronic structure ofGaBixAs1−x/GaAsepilayers. Physical Review B. 90(19). 28 indexed citations
8.
Mazzucato, S., H. Carrère, Alexandre Arnoult, et al.. (2014). Low-temperature photoluminescence study of exciton recombination in bulk GaAsBi. Nanoscale Research Letters. 9(1). 19–19. 29 indexed citations
9.
Clist, Bernard, et al.. (2014). Shell and Glass Beads from the Tombs of Kindoki, Mbanza Nsundi, Lower Congo. Ghent University Academic Bibliography (Ghent University). 26(1). 23–34. 5 indexed citations
10.
Mazzucato, S., H. Carrère, David Lagarde, et al.. (2013). Reduction of defect density by rapid thermal annealing in GaAsBi studied by time-resolved photoluminescence. Semiconductor Science and Technology. 28(2). 22001–22001. 39 indexed citations
11.
Jalabert, Laurent, Pascal Dubreuil, F. Carcenac, et al.. (2008). High aspect ratio GaAs nanowires made by ICP-RIE etching using Cl2/N2 chemistry. Microelectronic Engineering. 85(5-6). 1173–1178. 33 indexed citations
12.
Gallo, P., Alexandre Arnoult, T. Camps, et al.. (2007). Self-aligned and stray-field-free electrodes for spintronics: An application to a spin field effect transistor. Journal of Applied Physics. 101(2). 5 indexed citations
13.
Gallo, P., B. Viallet, E. Daran, & Chantal Fontaine. (2005). Efficient aminosilane adhesion promoter for soft nanoimprint on GaAs. Applied Physics Letters. 87(18). 4 indexed citations
14.
Bardinal, Véronique, et al.. (2005). Integrated optical detection subsystem for functional genomic analysis biosensor. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 5969. 596912–596912. 3 indexed citations
15.
Gorecki, Christophe, et al.. (2003). Miniaturized Scanning Near-Field Microscope Sensor Based on Optical Feedback Inside a Single-Mode Oxide-Confined Vertical-Cavity Surface-Emitting Laser. Japanese Journal of Applied Physics. 42(Part 2, No. 12A). L1469–L1471. 12 indexed citations
16.
Rocher, A., et al.. (2002). TEM evaluation of epitaxial strain in III–V semi-conductors: evidence of coherent and incoherent stress relaxation. Applied Surface Science. 188(1-2). 55–60. 4 indexed citations
17.
Rocher, A., et al.. (2001). TEM Study of strain states in III-V semiconductor epitaxial layers.. MRS Proceedings. 673. 1 indexed citations
18.
Guerret-Piécourt, C. & Chantal Fontaine. (1998). Temperature effect on surface flatness of molecular beam epitaxy homoepitaxial layers grown on nominal and vicinal (111)B GaAs substrates. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 16(1). 204–209. 9 indexed citations
19.
Vieu, C., et al.. (1994). Fabrication of quantum semiconductor structures by high energy electron beam lithography of an inorganic epitaxial resist on GaAs. Superlattices and Microstructures. 15(2). 81–81. 10 indexed citations
20.
Fontaine, Chantal, et al.. (1988). Status Of Fluoride-Semiconductor Heteroepitaxial Growth. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 944. 130–130. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by V. P. Evtikhiev Breakdown of academic impact, for papers by A. N. Pikhtin Breakdown of academic impact, for papers by B. Ściana Breakdown of academic impact, for papers by T. Katsuyama Breakdown of academic impact, for papers by C. Anayama Breakdown of academic impact, for papers by G. DeSalvo Breakdown of academic impact, for papers by A. Sacedón Breakdown of academic impact, for papers by N. Hayafuji Breakdown of academic impact, for papers by H. Thomas Breakdown of academic impact, for papers by А. В. Соломонов
Rankless by CCL
2026