L.P. Sadwick

420 total citations
54 papers, 291 citations indexed

About

L.P. Sadwick is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Astronomy and Astrophysics. According to data from OpenAlex, L.P. Sadwick has authored 54 papers receiving a total of 291 indexed citations (citations by other indexed papers that have themselves been cited), including 43 papers in Electrical and Electronic Engineering, 34 papers in Atomic and Molecular Physics, and Optics and 9 papers in Astronomy and Astrophysics. Recurrent topics in L.P. Sadwick's work include Semiconductor Quantum Structures and Devices (25 papers), Semiconductor materials and devices (19 papers) and Radio Frequency Integrated Circuit Design (9 papers). L.P. Sadwick is often cited by papers focused on Semiconductor Quantum Structures and Devices (25 papers), Semiconductor materials and devices (19 papers) and Radio Frequency Integrated Circuit Design (9 papers). L.P. Sadwick collaborates with scholars based in United States, South Korea and Taiwan. L.P. Sadwick's co-authors include D.C. Streit, K.L. Tan, K.L. Wang, G. B. Stringfellow, Curtis Hill, Kurt J. Linden, W. Linwood Jones, Joseph J. Kopanski, C. W. Nieh and David N. Jamieson and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of Materials Science.

In The Last Decade

L.P. Sadwick

43 papers receiving 276 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
L.P. Sadwick United States 10 234 186 65 40 36 54 291
В. В. Преображенский Russia 10 218 0.9× 301 1.6× 95 1.5× 55 1.4× 26 0.7× 54 350
H. Thomas United Kingdom 12 358 1.5× 275 1.5× 65 1.0× 32 0.8× 96 2.7× 46 411
W. Huber Germany 11 267 1.1× 135 0.7× 162 2.5× 37 0.9× 29 0.8× 28 326
D.C. Radulescu United States 12 347 1.5× 315 1.7× 48 0.7× 31 0.8× 62 1.7× 23 395
T. Sonoda Japan 10 296 1.3× 208 1.1× 40 0.6× 28 0.7× 45 1.3× 43 318
Chantal Fontaine France 12 238 1.0× 246 1.3× 95 1.5× 80 2.0× 62 1.7× 32 356
R. Kúdela Slovakia 10 201 0.9× 214 1.2× 71 1.1× 59 1.5× 72 2.0× 55 308
M. L. Young United Kingdom 11 314 1.3× 262 1.4× 108 1.7× 30 0.8× 30 0.8× 24 364
Huade Yao United States 7 256 1.1× 197 1.1× 86 1.3× 54 1.4× 38 1.1× 19 325
J.P. Laurenti France 10 312 1.3× 288 1.5× 127 2.0× 21 0.5× 19 0.5× 42 373

Countries citing papers authored by L.P. Sadwick

Since Specialization
Citations

This map shows the geographic impact of L.P. Sadwick's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L.P. Sadwick with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L.P. Sadwick more than expected).

Fields of papers citing papers by L.P. Sadwick

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L.P. Sadwick. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L.P. Sadwick. The network helps show where L.P. Sadwick may publish in the future.

Co-authorship network of co-authors of L.P. Sadwick

This figure shows the co-authorship network connecting the top 25 collaborators of L.P. Sadwick. A scholar is included among the top collaborators of L.P. Sadwick based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with L.P. Sadwick. L.P. Sadwick is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Ryu, Hyukhyun, Minhyon Jeon, Jae‐Young Leem, et al.. (2006). Chemical beam epitaxial growth of GaInP using uncracked trisdimethylaminophosphine. Journal of Materials Science. 41(24). 8265–8270. 1 indexed citations
2.
Sadwick, L.P., et al.. (2006). Terahertz Sources and Applications. 5. 1–4.
3.
Sadwick, L.P., et al.. (2004). Extreme temperature electronics. 4. 2528–2537. 4 indexed citations
4.
5.
Sadwick, L.P., et al.. (2003). Quasi-optical watt-level millimeter-wave monolithic solid-state diode-grid frequency multipliers. IEEE MTT-S International Microwave Symposium digest. 1069–1072. 3 indexed citations
6.
Sadwick, L.P., et al.. (2002). Progress in microminiature thermionic vacuum tube devices. 779–782. 1 indexed citations
7.
Hill, Curtis, G. B. Stringfellow, & L.P. Sadwick. (2002). Low pressure pyrolysis of alternative phosphorous precursors for chemical beam epitaxial growth of InP and related compounds. 167–169. 1 indexed citations
8.
Sadwick, L.P., et al.. (2001). Transistor action in GaP/TmP/GaAs heterostructure. Electronics Letters. 37(18). 1142–1143. 2 indexed citations
9.
Sadwick, L.P., et al.. (1999). High-temperature performance of ohmic contacts to n-type GaN and GaAs. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 3795. 223–223. 1 indexed citations
10.
Sadwick, L.P., B. Rajesh Kumar, T. C. Lai, et al.. (1998). Molecular beam epitaxy growth and characterization of DyP/GaAs, DyAs/GaAs, GaAs/DyP/GaAs, and GaAs/DyAs/GaAs heterostructures. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 16(3). 1467–1470. 4 indexed citations
11.
Sadwick, L.P., et al.. (1998). Epitaxial growth and characterization of DyP/GaAs, DyAs/GaAs, and GaAs/DyP/GaAs heterostructures. Journal of Electronic Materials. 27(5). 405–408. 3 indexed citations
12.
Hill, Curtis, G. B. Stringfellow, & L.P. Sadwick. (1997). A comparison of the reactions of phosphorus precursors on deposited GaP and InP films. Journal of Crystal Growth. 181(4). 321–325. 9 indexed citations
13.
Sadwick, L.P., Mayur M. Patel, Jeffrey E. Shield, et al.. (1996). Epitaxial dysprosium phosphide grown by gas-source and solid-source MBE on gallium arsenide substrates. Journal of Crystal Growth. 164(1-4). 285–290. 1 indexed citations
14.
Erickson, Andrew, et al.. (1996). Quantitative scanning capacitance microscopy analysis of two-dimensional dopant concentrations at nanoscale dimensions. Journal of Electronic Materials. 25(2). 301–304. 25 indexed citations
15.
Sadwick, L.P.. (1994). Thermal currents in proton isolated gallium arsenide structures at elevated temperatures. Applied Physics Letters. 64(1). 79–81. 2 indexed citations
16.
Sadwick, L.P., et al.. (1993). Observation of a 1.2 eV defect photoluminescence peak in heavily planar-doped n-type GaAs grown by molecular- beam epitaxy. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 11(1). 120–123. 2 indexed citations
17.
Sadwick, L.P., et al.. (1992). Design criteria of the near-millimeter wave quasi-optical monolithic diode-grid frequency multiplier array. International Journal of Infrared and Millimeter Waves. 13(8). 1145–1161. 1 indexed citations
18.
Sadwick, L.P., et al.. (1989). Effect of nitridation on the density of interface states in W–Ti/n-GaAs Schottky diodes. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 7(5). 1096–1102. 1 indexed citations
19.
Joseph, David, et al.. (1988). Observation of carbon incorporation during gallium arsenide growth by molecular beam epitaxy. Applied Physics Letters. 53(22). 2203–2204. 18 indexed citations
20.
Lin, T. L., L.P. Sadwick, Y. C. Kao, et al.. (1987). Growth and characterization of molecular beam epitaxial GaAs layers on porous silicon. Applied Physics Letters. 51(11). 814–816. 33 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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