H. Okano

844 citations

38 papers · 646 indexed · h-index 16

Impact in

Structural Biology top 10%
Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices
- Plasma Diagnostics and Applications
- Integrated Circuits and Semiconductor Failure Analysis

Papers in

Computational Mechanics 13
- Ion-surface interactions and analysis 11
Electrical and Electronic Engineering 31
- Semiconductor materials and devices 23
- Thin-Film Transistor Technologies 7
- Plasma Diagnostics and Applications 6

Co-authors: Yasuhiro Horiike Makoto Sekine N. Hayasaka T. Arikado Hitoshi Nishino Keiji Horioka Y. Horiike K. Suguro
Journals: Japanese Journal of Applied Physics (20 papers)Applied Physics Letters (5 papers)Journal of Applied Physics (3 papers)Journal of Crystal Growth (1 paper)Journal of The Electrochemical Society (1 paper)
Partner nations: Japan United States Bulgaria

In The Last Decade

H. Okano

36 papers receiving 616 citations

Peers

Countries citing papers authored by H. Okano

Since Specialization

Citations

This map shows the geographic impact of H. Okano's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. Okano with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. Okano more than expected).

Fields of papers citing papers by H. Okano

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. Okano. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. Okano. The network helps show where H. Okano may publish in the future.

Co-authorship network

The 25 scholars most cited alongside H. Okano, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with H. Okano Line = papers co-authored together H. Okano links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Highly Selective SiO₂ Etch Employing Inductively Coupled Hydro-Fluorocarbon Plasma Chemistry for Self Aligned Contact Etch Japanese Journal of Applied Physics ·Toni Silson, Yoshio ISHIKAWA, Chunhui Yang, A.V. Tagirov, H. Okano	1997	15
2	In Situ Transmission Electron Microscopy Observation of Single Crystallization of Filled Aluminum Interconnection Japanese Journal of Applied Physics ·Ruchita Ashtankar, Hiroshi Toyoda, Urs Waldner, N. Hayasaka, Hidehiro Yasuda, Hirotaro Mori, H. Okano	1995	3
3	Formation of Single-Crystal Al Interconnection by In Situ Annealing Japanese Journal of Applied Physics ·Ruchita Ashtankar, K. Suguro, N. Hayasaka, H. Okano	1993	7
4	New method for making Al single crystal interconnections on amorphous insulators 向其元, K. Suguro, N. Hayasaka, H. Okano	1993	2
5	Smoothing of the Si surface using CF4/O2 down-flow etching Journal of Applied Physics ·俊寛内木場, N. Hayasaka, Keiji Horioka, Antonio Eduardo Palomares Gimeno, N. Alves, Oluwabunmi Afolabi Oluwasore, F. Carra, Atsushi Sakai, H. Okano	1993	13
6	Resist and Sidewall Film Removal after Al Reactive Ion Etching (RIE) Employing F+H₂O Downstream Ashing Japanese Journal of Applied Physics ·M Crook, Nathan Pham, Dalia R. Juarez, Makoto Sekine, I. Howrie, Keiji Horioka, H. Okano	1993	8
7	Thin Film Deposition by Low Energy SiCl_n ⁺ Beam Japanese Journal of Applied Physics ·Takayuki Sakai, Akira Sakai, H. Okano	1993	18
8	Highly selective etching of polycrystalline silicon on silicon dioxide at low wafer temperature, employing magnetron plasma Journal of Applied Physics ·Makoto Sekine, Keiji Horioka, T. Arikado, H. Okano	1993	5
9	Influence of Al Surface Modification on Selectivity in Via-Hole Etching Employing CHF₃ Plasma Japanese Journal of Applied Physics ·Dalia R. Juarez, T. Arikado, Keiji Horioka, 貴彦平井, 真古家, Nathan Pham, H. Okano	1992	4
10	Mechanism of Corrosion in Al-Si-Cu Japanese Journal of Applied Physics ·N. Hayasaka, Michael B, M.O. El-Monayeri, Guo-jun SU, H. Okano	1991	10
11	Mechanism for Initial Stage of Selective Tungsten Growth Employing a WF₆ and SiH₄ Mixture Japanese Journal of Applied Physics ·Hitoshi Itoh, Takaaki Ohki, Tôru Watanabe, H. Okano	1991	16
12	Photo-assisted MBE growth of ZnSe crystals Journal of Crystal Growth ·Masakazu Ohishi, Hiroshi Saito, H. Okano, Rayan Khalid Alhowaish	1989	25
13	Microfabrication technologies for high aspect ratio processes. Journal of the Japan Society for Precision Engineering ·Yasuhiro Horiike, H. Okano	1987	0
14	Liquid Phase Oxidation Employing O Atoms Produced by Microwave Discharge and Si(CH3)4 陶小青, H. Okano, Y. Horiike	1987	1
15	Excimer-laser etching on silicon Applied Physics A ·Y. Horiike, N. Hayasaka, Makoto Sekine, T. Arikado, Masahiko Nakase, H. Okano	1987	38
16	Photo-assisted anisotropic etching of phosphorus-doped polycrystalline silicon employing reactive species generated by a microwave discharge Applied Physics Letters ·N. Hayasaka, H. Okano, Makoto Sekine, Y. Horiike	1986	15
17	Photo-Excited Etching of Poly-Crystalline and Single-Crystalline Silicon in Cl₂ Atmosphere Japanese Journal of Applied Physics ·H. Okano, Yasuhiro Horiike, Makoto Sekine	1985	63
18	A New Anisotropic Etching of N+ Poly-Si Using XeCl Excimer Laser Beam Symposium on VLSI Technology ·H. Okano, Makoto Sekine, Y. Horiike	1984	1
19	Cl₂/Ar Plasma Etching of a Contaminated Layer on Si Induced by Fluorocarbon Gas Plasma Japanese Journal of Applied Physics ·Yasuhiro Horiike, Jairo Anibal Rey, H. Okano, Prema Singa, Jo ao P. T. Santos	1981	22
20	Si Etch Rate and Etch Yield with Ar⁺/Cl₂ System Japanese Journal of Applied Physics ·H. Okano, Yasuhiro Horiike	1981	32

About H. Okano

H. Okano is a scholar working on Computational Mechanics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Mechanics of Materials and Surfaces, Coatings and Films, having authored 38 papers that have together received 646 indexed citations. Recurring topics across this work include Semiconductor materials and devices (23 papers), Ion-surface interactions and analysis (11 papers), Copper Interconnects and Reliability (8 papers), Thin-Film Transistor Technologies (7 papers), Metal and Thin Film Mechanics (6 papers), Silicon Nanostructures and Photoluminescence (6 papers), Plasma Diagnostics and Applications (6 papers) and Advanced Surface Polishing Techniques (4 papers). The work is most often cited by research in Structural Biology (13 citations), Electrical and Electronic Engineering (520 citations), Surfaces, Coatings and Films (60 citations), Computational Mechanics (170 citations) and Mechanics of Materials (178 citations). H. Okano has collaborated with scholars based in Japan, United States and Bulgaria. Frequent co-authors include Yasuhiro Horiike, Makoto Sekine, N. Hayasaka, T. Arikado, Hitoshi Nishino, Keiji Horioka, Y. Horiike, K. Suguro, Takashi Yamazaki and Yasushi Nakasaki. Their work appears in journals such as Japanese Journal of Applied Physics, Applied Physics Letters, Journal of Applied Physics, Journal of Crystal Growth and Journal of The Electrochemical Society.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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