Daisuke Muto

558 total citations
44 papers, 474 citations indexed

About

Daisuke Muto is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Daisuke Muto has authored 44 papers receiving a total of 474 indexed citations (citations by other indexed papers that have themselves been cited), including 25 papers in Condensed Matter Physics, 19 papers in Electrical and Electronic Engineering and 17 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Daisuke Muto's work include GaN-based semiconductor devices and materials (25 papers), Ga2O3 and related materials (16 papers) and Semiconductor materials and devices (12 papers). Daisuke Muto is often cited by papers focused on GaN-based semiconductor devices and materials (25 papers), Ga2O3 and related materials (16 papers) and Semiconductor materials and devices (12 papers). Daisuke Muto collaborates with scholars based in Japan, Poland and United States. Daisuke Muto's co-authors include Yasushi Nanishi, H. Naoi, Tsutomu Araki, W. J. Schaff, P. D. C. King, C. F. McConville, T. D. Veal, Tomohiro Yamaguchi, M. Kurouchi and Junichi Murota and has published in prestigious journals such as SHILAP Revista de lepidopterología, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Daisuke Muto

44 papers receiving 461 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Daisuke Muto Japan 12 338 258 171 154 126 44 474
Franco Zanon Italy 9 688 2.0× 218 0.8× 146 0.9× 628 4.1× 161 1.3× 18 789
Cristina Bormio-Nunes Brazil 15 96 0.3× 436 1.7× 163 1.0× 91 0.6× 232 1.8× 65 663
K. Y. Zang Singapore 15 369 1.1× 214 0.8× 268 1.6× 200 1.3× 78 0.6× 38 498
L. E. Rodak United States 7 348 1.0× 231 0.9× 170 1.0× 102 0.7× 55 0.4× 25 392
J. T. Hsu Taiwan 10 370 1.1× 294 1.1× 338 2.0× 193 1.3× 151 1.2× 18 585
M. H. Hsieh Taiwan 9 360 1.1× 132 0.5× 237 1.4× 169 1.1× 143 1.1× 15 446
F. Shahedipour United States 11 405 1.2× 314 1.2× 274 1.6× 185 1.2× 81 0.6× 18 535
Sung Hun Wee United States 13 391 1.2× 173 0.7× 345 2.0× 122 0.8× 90 0.7× 22 606
S. Zamir Israel 9 254 0.8× 134 0.5× 147 0.9× 142 0.9× 80 0.6× 22 341
Randy P. Tompkins United States 13 227 0.7× 133 0.5× 171 1.0× 213 1.4× 119 0.9× 33 381

Countries citing papers authored by Daisuke Muto

Since Specialization
Citations

This map shows the geographic impact of Daisuke Muto's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Daisuke Muto with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Daisuke Muto more than expected).

Fields of papers citing papers by Daisuke Muto

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Daisuke Muto. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Daisuke Muto. The network helps show where Daisuke Muto may publish in the future.

Co-authorship network of co-authors of Daisuke Muto

This figure shows the co-authorship network connecting the top 25 collaborators of Daisuke Muto. A scholar is included among the top collaborators of Daisuke Muto based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Daisuke Muto. Daisuke Muto is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Masuda, Tatsuya, et al.. (2017). Investigation of Carrot Reduction Effect on 4H-Silicon Carbide Epitaxial Wafers with Optimized Buffer Layer. Materials science forum. 897. 75–78. 4 indexed citations
2.
Masuda, Tatsuya, et al.. (2016). Improvement on 150 mm 4H-SiC Epitaxial Wafer Quality. Materials science forum. 858. 201–204. 2 indexed citations
3.
Muto, Daisuke, et al.. (2015). Reduction of acoustic mode in noise-proof cover with interference wave inducing apertures. SHILAP Revista de lepidopterología. 81(827). 15–120. 1 indexed citations
4.
Muto, Daisuke, et al.. (2014). 1215 Study on reduction of aerodynamic noise for ultra-high-speed elevator. The Proceedings of the Transportation and Logistics Conference. 2014.23(0). 75–78. 1 indexed citations
5.
Muto, Daisuke, Yasushi Takano, & Kazuyuki Sugimura. (2013). Optimum Design Using Multi-Objective GA for Multi-Layered Porous Sound Absorbing Materials. TRANSACTIONS OF THE JAPAN SOCIETY OF MECHANICAL ENGINEERS Series C. 79(802). 1849–1858. 2 indexed citations
6.
Momose, Kenji, Daisuke Muto, Yoshiki Shimodaira, et al.. (2012). Characterization of Triangular-Defects in 4° off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography and by Transmission Electron Microscopy. Materials science forum. 717-720. 363–366. 9 indexed citations
7.
Kawashima, Keisuke, et al.. (2009). Growth of Semipolar InN on r-plane (10-12) Sapphire by RF-MBE. IEEJ Transactions on Electronics Information and Systems. 129(11). 1974–1977. 1 indexed citations
8.
Yamaguchi, Tomohiro, Daisuke Muto, Tsutomu Araki, Narihiko Maeda, & Yasushi Nanishi. (2009). Novel InN growth method under In‐rich condition on GaN/Al2O3 (0001) templates. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 6(S2). 13 indexed citations
9.
Akagi, Takanobu, et al.. (2008). Correlation Between Threading Dislocations and Nonradiative Recombination Centers in InN Observed by IR Cathodoluminescence. Journal of Electronic Materials. 37(5). 603–606. 9 indexed citations
10.
Miyajima, Takao, Yoshihiro Kudo, Yoshinori Kitajima, et al.. (2008). Determination of the Mg occupation site in MOCVD‐ and MBE‐grown Mg‐doped InN using X‐ray absorption fine‐structure measurements. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 5(6). 1665–1667. 2 indexed citations
11.
Naoi, H., et al.. (2007). Thermal and chemical stabilities of In‐ and N‐polar InN surfaces. physica status solidi (b). 244(6). 1834–1838. 8 indexed citations
12.
Muto, Daisuke, et al.. (2006). High‐quality InN grown on KOH wet etched N‐polar InN template by RF‐MBE. physica status solidi (a). 203(7). 1691–1695. 16 indexed citations
13.
Kurouchi, M., H. Naoi, Daisuke Muto, et al.. (2006). Fabrication of InN/InGaN multiple quantum well structures by RF‐MBE. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 3(6). 1599–1603. 2 indexed citations
14.
Naoi, H., et al.. (2006). Growth and properties of InN, InGaN, and InN/InGaN quantum wells. physica status solidi (a). 203(1). 93–101. 11 indexed citations
15.
Muto, Daisuke, et al.. (2005). Polarity determination of InN by wet etching. physica status solidi (a). 202(5). 773–776. 45 indexed citations
16.
Mori, M., et al.. (2004). Si epitaxial growth on atomic-order nitrided Si(1 0 0) using electron cyclotron resonance plasma. Materials Science in Semiconductor Processing. 8(1-3). 65–68. 2 indexed citations
17.
Muto, Daisuke, et al.. (2004). Effects of the Nitridation Process of (0001) Sapphire on Crystalline Quality of InN Grown by RF-MBE. MRS Proceedings. 831. 3 indexed citations
18.
Suzumori, Nobuhiro, Kinue Katano, Takeshi Sato, et al.. (2003). Conservative treatment by angiographic artery embolization of an 11-week cervical pregnancy after a period of heavy bleeding. Fertility and Sterility. 80(3). 617–619. 18 indexed citations
19.
Muto, Daisuke, et al.. (2003). Ar plasma irradiation effects in atomically controlled Si epitaxial growth. Applied Surface Science. 224(1-4). 210–214. 8 indexed citations
20.
Muto, Daisuke, et al.. (2002). Thermal effects in atomic-order nitridation of Si by a nitrogen plasma. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 20(4). 1431–1435. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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