G.Y. Zhang

587 total citations
40 papers, 495 citations indexed

About

G.Y. Zhang is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, G.Y. Zhang has authored 40 papers receiving a total of 495 indexed citations (citations by other indexed papers that have themselves been cited), including 36 papers in Condensed Matter Physics, 22 papers in Electrical and Electronic Engineering and 16 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in G.Y. Zhang's work include GaN-based semiconductor devices and materials (36 papers), Ga2O3 and related materials (16 papers) and Semiconductor materials and devices (14 papers). G.Y. Zhang is often cited by papers focused on GaN-based semiconductor devices and materials (36 papers), Ga2O3 and related materials (16 papers) and Semiconductor materials and devices (14 papers). G.Y. Zhang collaborates with scholars based in China, Japan and Netherlands. G.Y. Zhang's co-authors include Chaoyi Zhu, Tongjun Yu, Zhihui Yang, Z. Yang, Liefeng Feng, Z. X. Qin, Xiao Hu, Zhiyi Chen, Junqi Shen and Bo Shen and has published in prestigious journals such as Applied Surface Science, IEEE Transactions on Electron Devices and Thin Solid Films.

In The Last Decade

G.Y. Zhang

39 papers receiving 481 citations

Peers

G.Y. Zhang
Y. Park South Korea
Chi-Chih Liao Taiwan
U.H. Liaw Taiwan
S. Rennesson France
C. R. Staddon United Kingdom
Tommy Ive Sweden
June O Song South Korea
A. S. Zubrilov Russia
N. Zainal Malaysia
C. H. Qiu United States
Y. Park South Korea
G.Y. Zhang
Citations per year, relative to G.Y. Zhang G.Y. Zhang (= 1×) peers Y. Park

Countries citing papers authored by G.Y. Zhang

Since Specialization
Citations

This map shows the geographic impact of G.Y. Zhang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G.Y. Zhang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G.Y. Zhang more than expected).

Fields of papers citing papers by G.Y. Zhang

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G.Y. Zhang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G.Y. Zhang. The network helps show where G.Y. Zhang may publish in the future.

Co-authorship network of co-authors of G.Y. Zhang

This figure shows the co-authorship network connecting the top 25 collaborators of G.Y. Zhang. A scholar is included among the top collaborators of G.Y. Zhang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G.Y. Zhang. G.Y. Zhang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Long, Hao, Tongjun Yu, Hao Fang, Z. Yang, & G.Y. Zhang. (2012). Modulation of anisotropic crystalline in a-plane GaN on HT-AlN buffer layer. Applied Surface Science. 258(15). 5579–5582. 5 indexed citations
3.
Gong, Zheng, D. Massoubre, Enyuan Xie, et al.. (2010). Yellow-green and amber InGaN micro-pixellated light-emitting diode arrays. Griffith Research Online (Griffith University, Queensland, Australia). 645–646. 1 indexed citations
4.
5.
Xu, Fujun, Jun Xu, Bo Shen, et al.. (2008). Realization of high-resistance GaN by controlling the annealing pressure of the nucleation layer in metal-organic chemical vapor deposition. Thin Solid Films. 517(2). 588–591. 12 indexed citations
6.
Lei, Shuangying, Zheng‐Gao Dong, Bo Shen, & G.Y. Zhang. (2008). Intersubband transition in symmetric AlxGa1−xN/GaN double quantum wells with applied electric field. Physics Letters A. 373(1). 136–139. 7 indexed citations
7.
Shen, Bo, Fujun Xu, Jun Xu, et al.. (2007). High temperature dependence of the density of two-dimensional electron gas in Al0.18Ga0.82N/GaN heterostructures. Applied Physics A. 88(4). 715–718. 35 indexed citations
8.
9.
Han, Kui, Bo Shen, Ning Tang, et al.. (2007). Observation of the transition from diffusive regime to ballistic regime of the 2DEG transport property in Al Ga1−N/GaN heterostructures. Physics Letters A. 366(3). 267–270. 1 indexed citations
10.
Fang, H., Xuanwu Kang, Tianxiang Dai, et al.. (2006). Studies of improving light extraction efficiency of high power blue light-emitting diode by photo-enhanced chemical etching. Journal of Crystal Growth. 298. 703–705. 5 indexed citations
11.
Xu, Ke, Xiao Hu, L. S. Yu, et al.. (2006). Vertical conductivity of p-AlxGa1−xN/GaN superlattices measured with modified transmission line model. Journal of Crystal Growth. 298. 815–818. 4 indexed citations
12.
Kang, Xuanwu, Tianxiang Dai, Z. X. Qin, et al.. (2006). Influences of laser lift-off process on the performances of large-area light-emitting diodes. Journal of Crystal Growth. 298. 719–721. 4 indexed citations
13.
Yang, Z., Yuan Lü, Tongjun Yu, et al.. (2005). Reduction of threading edge dislocation density in n-type GaN by Si delta-doping. Journal of Crystal Growth. 286(2). 255–258. 22 indexed citations
14.
Qin, Z. X., Zhenxing Feng, Zhihui Yang, et al.. (2005). Temperature dependent diffusion and epitaxial behavior of oxidized Au/Ni/p-GaN ohmic contact. Materials Science and Engineering B. 128(1-3). 37–43. 10 indexed citations
15.
Wu, Mengwei, Shengqiang Zhou, Shude Yao, et al.. (2004). Structural characterization and elastic strain of InGaN/GaN multiple quantum wells. 69. 40–45. 1 indexed citations
16.
Qin, Z. X., et al.. (2004). Study of Ti/Au, Ti/Al/Au, and Ti/Al/Ni/Au ohmic contacts to n -GaN. Applied Physics A. 78(5). 729–731. 43 indexed citations
17.
Qin, Z. X., Xiao Hu, Tongjun Yu, et al.. (2003). Study of photoluminescence and absorption in phase-separation InGaN films. Physica B Condensed Matter. 344(1-4). 292–296. 9 indexed citations
18.
Qin, Z. X., Tong Yu, Xiao Hu, et al.. (2003). Thermal annealing effects on Ni/Au contacts to p type GaN in different ambient. Materials Science and Engineering B. 100(2). 199–203. 16 indexed citations
19.
Zhou, Shengqiang, M. F. Wu, Lei Hou, et al.. (2003). An approach to determine the chemical composition in InGaN/GaN multiple quantum wells. Journal of Crystal Growth. 263(1-4). 35–39. 18 indexed citations
20.
Zhang, G.Y., et al.. (1997). Effects of thermal convection on growth rate of GaN by MOVPE. Solid State Communications. 102(4). 331–334. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by Y. Park Breakdown of academic impact, for papers by Chi-Chih Liao Breakdown of academic impact, for papers by U.H. Liaw Breakdown of academic impact, for papers by S. Rennesson Breakdown of academic impact, for papers by C. R. Staddon Breakdown of academic impact, for papers by Tommy Ive Breakdown of academic impact, for papers by June O Song Breakdown of academic impact, for papers by A. S. Zubrilov Breakdown of academic impact, for papers by N. Zainal Breakdown of academic impact, for papers by C. H. Qiu
Rankless by CCL
2026