Shude Yao

523 total citations
52 papers, 432 citations indexed

About

Shude Yao is a scholar working on Materials Chemistry, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Shude Yao has authored 52 papers receiving a total of 432 indexed citations (citations by other indexed papers that have themselves been cited), including 29 papers in Materials Chemistry, 24 papers in Condensed Matter Physics and 21 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Shude Yao's work include GaN-based semiconductor devices and materials (23 papers), ZnO doping and properties (22 papers) and Ga2O3 and related materials (20 papers). Shude Yao is often cited by papers focused on GaN-based semiconductor devices and materials (23 papers), ZnO doping and properties (22 papers) and Ga2O3 and related materials (20 papers). Shude Yao collaborates with scholars based in China, Belgium and Taiwan. Shude Yao's co-authors include Huan Wang, Xuechao Liu, Er‐Wei Shi, Zhi‐Zhan Chen, Huawei Zhang, Lixin Song, Kun Wang, Shengqiang Zhou, Yao Li and Zhe Chuan Feng and has published in prestigious journals such as Applied Physics Letters, Thin Solid Films and Journal of Magnetism and Magnetic Materials.

In The Last Decade

Shude Yao

46 papers receiving 404 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Shude Yao China 11 297 195 164 111 49 52 432
Jebreel M. Khoshman Jordan 11 340 1.1× 352 1.8× 93 0.6× 69 0.6× 45 0.9× 19 501
J. W. Bae South Korea 13 344 1.2× 269 1.4× 175 1.1× 61 0.5× 39 0.8× 28 449
Min-Su Yi South Korea 12 356 1.2× 335 1.7× 158 1.0× 117 1.1× 35 0.7× 22 520
Penka Terziyska Bulgaria 12 241 0.8× 182 0.9× 94 0.6× 86 0.8× 66 1.3× 56 359
R. Rairigh United States 10 524 1.8× 166 0.9× 310 1.9× 159 1.4× 40 0.8× 18 585
Qizhen Xue United States 8 369 1.2× 233 1.2× 181 1.1× 102 0.9× 55 1.1× 9 474
S. J. Chang Taiwan 13 265 0.9× 319 1.6× 147 0.9× 207 1.9× 61 1.2× 17 472
Joji Kurian India 11 320 1.1× 235 1.2× 84 0.5× 55 0.5× 28 0.6× 34 459
Qi Hang Qin Finland 7 166 0.6× 234 1.2× 129 0.8× 72 0.6× 90 1.8× 10 489
P. Chou United States 12 269 0.9× 191 1.0× 154 0.9× 247 2.2× 55 1.1× 39 466

Countries citing papers authored by Shude Yao

Since Specialization
Citations

This map shows the geographic impact of Shude Yao's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Shude Yao with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Shude Yao more than expected).

Fields of papers citing papers by Shude Yao

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Shude Yao. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Shude Yao. The network helps show where Shude Yao may publish in the future.

Co-authorship network of co-authors of Shude Yao

This figure shows the co-authorship network connecting the top 25 collaborators of Shude Yao. A scholar is included among the top collaborators of Shude Yao based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Shude Yao. Shude Yao is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
2.
Xiong, Ze, Xuechao Liu, Jianhua Yang, et al.. (2013). Influence of Ga doping on the Cr valence state and ferromagnetism in Cr: ZnO films. Applied Physics Letters. 102(2). 10 indexed citations
3.
Chen, Tianxiang, et al.. (2012). Oxygen Implanted Ni/NiO Exchange Bias System: Fabrication, Structure and Magnetic Property. Journal of Nanoscience and Nanotechnology. 12(2). 1059–1062. 2 indexed citations
4.
Pan, Feng, et al.. (2011). Superparamagnetic nanoparticles formed in Fe-implanted ZnO. Acta Physica Sinica. 60(10). 108501–108501. 6 indexed citations
5.
Pan, Feng, et al.. (2011). The correlation between structure and magnetism of Ni-implanted TiO2 annealed at different temperatures. Journal of Magnetism and Magnetic Materials. 324(1). 33–36. 12 indexed citations
6.
Yao, Shude, et al.. (2010). Ion irradiation induced bubble relaxation in SiC. Radiation effects and defects in solids. 165(5). 388–395. 2 indexed citations
7.
Lin, Li, et al.. (2010). Optical, structural, and nuclear scientific studies of AlGaN with high Al composition. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 7784. 778415–778415. 1 indexed citations
8.
Wu, Wei, et al.. (2009). Tetragonal Distortion of InN Thin Films by RBS/Channeling. Chinese Physics Letters. 26(8). 86111–86111. 2 indexed citations
9.
Chen, Tianxiang, et al.. (2009). Structure Characterization of Modified Polyimide Films Irradiated by 2 MeV Si Ions. Chinese Physics Letters. 26(2). 26101–26101. 4 indexed citations
10.
Chen, Tianxiang, Shude Yao, Kun Wang, & Huan Wang. (2008). The modification of mechanical properties by 2 MeV Si ions irradiating polyimide. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 266(12-13). 3091–3094. 5 indexed citations
11.
Wang, Kun, et al.. (2008). Influence of oxygen pressure on elastic strain and excitonic transition energy of ZnO epilayers prepared by pulsed laser deposition. Materials Research Bulletin. 43(12). 3327–3331. 12 indexed citations
12.
Chen, Di, et al.. (2008). Nano-clusters structure and magnetic properties of high fluence Mn+ ion-implanted GaN. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 266(12-13). 2797–2800. 15 indexed citations
13.
14.
Kang, Meng, et al.. (2006). Study of radiation damage in Mg+-implanted GaN. Acta Physica Sinica. 55(5). 2476–2476. 3 indexed citations
15.
Wang, Huan, et al.. (2006). Microstructure Study on Heterostructures of AlInGaN/GaN/Al 2 O 3 by Using Rutherford Backscattering/Channelling and XRD. Chinese Physics Letters. 23(9). 2510–2512. 4 indexed citations
16.
Wu, Mengwei, Shengqiang Zhou, Shude Yao, et al.. (2004). Structural characterization and elastic strain of InGaN/GaN multiple quantum wells. 69. 40–45. 1 indexed citations
17.
Wu, Mengwei, Shengqiang Zhou, Shude Yao, et al.. (2004). High precision determination of the elastic strain of InGaN/GaN multiple quantum wells. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 22(3). 920–924. 17 indexed citations
18.
Yao, Shude, et al.. (2002). Modification of new photoelectric material GaN by implantation of H+, He+ and N+ ion beam. Surface and Coatings Technology. 158-159. 412–415. 2 indexed citations
19.
Wu, M. F., et al.. (1999). Strain in AlGaN layer studied by Rutherford backscattering/channeling and x-ray diffraction. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 17(4). 1502–1506. 13 indexed citations
20.
Wu, M. F., Shude Yao, A. Vantomme, et al.. (1998). Heteroepitaxial Er0.49Gd0.51Si1.7 layers formed by channeled ion beam synthesis. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 142(3). 355–360. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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