Chun‐An Lin

412 total citations
7 papers, 363 citations indexed

About

Chun‐An Lin is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Polymers and Plastics. According to data from OpenAlex, Chun‐An Lin has authored 7 papers receiving a total of 363 indexed citations (citations by other indexed papers that have themselves been cited), including 7 papers in Electrical and Electronic Engineering, 5 papers in Materials Chemistry and 4 papers in Polymers and Plastics. Recurrent topics in Chun‐An Lin's work include Advanced Memory and Neural Computing (7 papers), Transition Metal Oxide Nanomaterials (4 papers) and Ferroelectric and Negative Capacitance Devices (3 papers). Chun‐An Lin is often cited by papers focused on Advanced Memory and Neural Computing (7 papers), Transition Metal Oxide Nanomaterials (4 papers) and Ferroelectric and Negative Capacitance Devices (3 papers). Chun‐An Lin collaborates with scholars based in Taiwan, India and Pakistan. Chun‐An Lin's co-authors include Tseung‐Yuen Tseng, Tsung-Ling Tsai, Firman Mangasa Simanjuntak, Kung‐Hwa Wei, Chun-Yang Huang, Debashis Panda, Sridhar Chandrasekaran, Anwar Manzoor Rana, Muhammad Ismail and Umesh Chand and has published in prestigious journals such as Applied Physics Letters, Journal of Materials Science and Japanese Journal of Applied Physics.

In The Last Decade

Chun‐An Lin

7 papers receiving 358 citations

Peers

Chun‐An Lin

EEE

PP

MC

CMN

EOMM

Tsung-Ling Tsai Taiwan

C. Liu South Korea

Chih-Yang Lin Taiwan

Yoon Cheol Bae South Korea

Hsin-Lu Chen China

Hyung Dong Lee South Korea

Ya-Chi Hung Taiwan

Takeki Ninomiya Japan

Chun-Chieh Lin Taiwan

Wen-Yueh Jang Taiwan

Tsung-Ling Tsai Taiwan

Chun‐An Lin

439 ×1.2

EEE

183 ×1.2

PP

167 ×1.2

MC

112 ×1.2

CMN

12 ×1.1

EOMM

Citations per year, relative to Chun‐An Lin Chun‐An Lin (= 1×) peers Tsung-Ling Tsai

Countries citing papers authored by Chun‐An Lin

Since Specialization

Citations

This map shows the geographic impact of Chun‐An Lin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Chun‐An Lin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Chun‐An Lin more than expected).

Fields of papers citing papers by Chun‐An Lin

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Chun‐An Lin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Chun‐An Lin. The network helps show where Chun‐An Lin may publish in the future.

Co-authorship network of co-authors of Chun‐An Lin

This figure shows the co-authorship network connecting the top 25 collaborators of Chun‐An Lin. A scholar is included among the top collaborators of Chun‐An Lin based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Chun‐An Lin. Chun‐An Lin is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

7 of 7 papers shown

1.

Lin, Chun‐An, et al.. (2019). Impact of barrier layer on HfO2-based conductive bridge random access memory. Applied Physics Letters. 114(9). 18 indexed citations

2.

Chandrasekaran, Sridhar, Firman Mangasa Simanjuntak, Tsung-Ling Tsai, Chun‐An Lin, & Tseung‐Yuen Tseng. (2017). Effect of barrier layer on switching polarity of ZrO2-based conducting-bridge random access memory. Applied Physics Letters. 111(11). 23 indexed citations

3.

Simanjuntak, Firman Mangasa, et al.. (2016). Impacts of Co doping on ZnO transparent switching memory device characteristics. Applied Physics Letters. 108(18). 71 indexed citations

4.

Simanjuntak, Firman Mangasa, Debashis Panda, Tsung-Ling Tsai, et al.. (2015). Enhancing the memory window of AZO/ZnO/ITO transparent resistive switching devices by modulating the oxygen vacancy concentration of the top electrode. Journal of Materials Science. 50(21). 6961–6969. 57 indexed citations

5.

Simanjuntak, Firman Mangasa, Debashis Panda, Tsung-Ling Tsai, et al.. (2015). Enhanced switching uniformity in AZO/ZnO1−x/ITO transparent resistive memory devices by bipolar double forming. Applied Physics Letters. 107(3). 50 indexed citations

6.

Huang, Chun-Yang, et al.. (2014). Switching mechanism of double forming process phenomenon in ZrOx/HfOy bilayer resistive switching memory structure with large endurance. Applied Physics Letters. 104(6). 125 indexed citations

7.

Ismail, Muhammad, Ijaz Talib, Chun-Yang Huang, et al.. (2014). Resistive switching characteristics of Pt/CeO_x/TiN memory device. Japanese Journal of Applied Physics. 53(6). 60303–60303. 19 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact