S. Galata

652 total citations
26 papers, 576 citations indexed

About

S. Galata is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, S. Galata has authored 26 papers receiving a total of 576 indexed citations (citations by other indexed papers that have themselves been cited), including 25 papers in Electrical and Electronic Engineering, 14 papers in Materials Chemistry and 10 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in S. Galata's work include Semiconductor materials and devices (23 papers), Electronic and Structural Properties of Oxides (9 papers) and Semiconductor materials and interfaces (6 papers). S. Galata is often cited by papers focused on Semiconductor materials and devices (23 papers), Electronic and Structural Properties of Oxides (9 papers) and Semiconductor materials and interfaces (6 papers). S. Galata collaborates with scholars based in Greece, Switzerland and Italy. S. Galata's co-authors include A. Dimoulas, A. Sotiropoulos, Y. Panayiotatos, G. Mavrou, Polychronis Tsipas, E. K. Evangelou, Dimitra Tsoutsou, Jin Won Seo, Ch. Dieker and J. Fompeyrine and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

S. Galata

26 papers receiving 568 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
S. Galata Greece 13 526 298 210 59 29 26 576
Katsuhiro Kutsuki Japan 12 378 0.7× 138 0.5× 78 0.4× 63 1.1× 39 1.3× 36 410
D. T. Krick United States 7 473 0.9× 303 1.0× 75 0.4× 47 0.8× 23 0.8× 11 491
M.-Y. Ho United States 5 577 1.1× 331 1.1× 72 0.3× 76 1.3× 14 0.5× 6 601
Taeko Ikarashi Japan 13 319 0.6× 172 0.6× 99 0.5× 25 0.4× 39 1.3× 24 373
K. Fujihara South Korea 7 506 1.0× 224 0.8× 69 0.3× 48 0.8× 26 0.9× 26 541
Hyeon-Seag Kim United States 4 420 0.8× 211 0.7× 97 0.5× 52 0.9× 17 0.6× 6 460
J. Fritsche Germany 16 578 1.1× 564 1.9× 185 0.9× 23 0.4× 29 1.0× 22 643
R. Rai United States 11 736 1.4× 255 0.9× 116 0.6× 53 0.9× 18 0.6× 17 761
A. V. Gelatos United States 12 565 1.1× 373 1.3× 112 0.5× 90 1.5× 27 0.9× 28 600
Q.P. Wang China 15 479 0.9× 309 1.0× 268 1.3× 111 1.9× 15 0.5× 25 601

Countries citing papers authored by S. Galata

Since Specialization
Citations

This map shows the geographic impact of S. Galata's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Galata with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Galata more than expected).

Fields of papers citing papers by S. Galata

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Galata. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Galata. The network helps show where S. Galata may publish in the future.

Co-authorship network of co-authors of S. Galata

This figure shows the co-authorship network connecting the top 25 collaborators of S. Galata. A scholar is included among the top collaborators of S. Galata based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. Galata. S. Galata is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Boscherini, F., F. D’Acapito, S. Galata, Dimitra Tsoutsou, & A. Dimoulas. (2011). Atomic scale mechanism for the Ge-induced stabilization of the tetragonal, very high-κ, phase of ZrO2. Applied Physics Letters. 99(12). 16 indexed citations
2.
Evangelou, E. K., et al.. (2010). SILC decay in La2O3 gate dielectrics grown on Ge substrates subjected to constant voltage stress. Solid-State Electronics. 54(9). 979–984. 8 indexed citations
3.
Tsoutsou, Dimitra, Y. Panayiotatos, S. Galata, et al.. (2010). The effect of Se and Se/Al passivation on the oxidation of Ge. Microelectronic Engineering. 88(4). 407–410. 9 indexed citations
4.
Dimoulas, A., Dimitra Tsoutsou, Y. Panayiotatos, et al.. (2010). The role of La surface chemistry in the passivation of Ge. Applied Physics Letters. 96(1). 47 indexed citations
5.
Tsoutsou, Dimitra, Y. Panayiotatos, A. Sotiropoulos, et al.. (2010). Chemical stability of lanthanum germanate passivating layer on Ge upon high-k deposition: A photoemission study on the role of La in the interface chemistry. Journal of Applied Physics. 108(6). 21 indexed citations
6.
Ioannou-Sougleridis, V., S. Galata, Evangelos Golias, et al.. (2010). High performance n+/p and p+/n germanium diodes at low-temperature activation annealing. Microelectronic Engineering. 88(3). 254–261. 6 indexed citations
7.
Dimoulas, A., Dimitra Tsoutsou, S. Galata, et al.. (2010). (Invited) Ge Surfaces and Its Passivation by Rare Earth Lanthanum Germanate Dielectric. ECS Transactions. 33(6). 433–446. 3 indexed citations
8.
Galata, S., G. Mavrou, Polychronis Tsipas, et al.. (2009). Metal-oxide-semiconductor devices on p-type Ge with La2O3 and ZrO2/La2O3 as gate dielectric and the effect of postmetallization anneal. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 27(1). 246–248. 8 indexed citations
9.
Tsoutsou, Dimitra, Γ. Αποστολόπουλος, S. Galata, et al.. (2009). Stabilization of very high-k tetragonal phase in Ge-doped ZrO2 films grown by atomic oxygen beam deposition. Journal of Applied Physics. 106(2). 33 indexed citations
10.
11.
Tsoutsou, Dimitra, Γ. Αποστολόπουλος, S. Galata, et al.. (2009). Stabilization of a very high-k tetragonal ZrO2 phase by direct doping with germanium. Microelectronic Engineering. 86(7-9). 1626–1628. 27 indexed citations
12.
Mavrou, G., S. Galata, Polychronis Tsipas, et al.. (2008). Electrical properties of La2O3 and HfO2∕La2O3 gate dielectrics for germanium metal-oxide-semiconductor devices. Journal of Applied Physics. 103(1). 97 indexed citations
13.
Dimoulas, A., Y. Panayiotatos, Polychronis Tsipas, et al.. (2008). Gate Dielectrics for High Mobility Semiconductors. ECS Transactions. 16(5). 295–306. 3 indexed citations
14.
Mavrou, G., Polychronis Tsipas, A. Sotiropoulos, et al.. (2008). Very high-κ ZrO2 with La2O3 (LaGeOx) passivating interfacial layers on germanium substrates. Applied Physics Letters. 93(21). 59 indexed citations
15.
Tsipas, Polychronis, A. Sotiropoulos, S. Galata, et al.. (2008). Germanium-induced stabilization of a very high-k zirconia phase in ZrO2/GeO2 gate stacks. Applied Physics Letters. 93(8). 57 indexed citations
16.
Tsipas, Polychronis, G. Mavrou, A. Sotiropoulos, et al.. (2008). Very High-k Tetragonal ZrO2 on Ge with GeO2 Passivating Interfacial Layer. ECS Transactions. 16(10). 767–772. 1 indexed citations
17.
Dimoulas, A., D.P. Brunco, S. Ferrari, et al.. (2007). Interface engineering for Ge metal-oxide–semiconductor devices. Thin Solid Films. 515(16). 6337–6343. 80 indexed citations
18.
Galata, S., et al.. (2005). Sulphur doped silicon light emitting diodes. Materials Science and Engineering B. 124-125. 435–439. 5 indexed citations
19.
Lourenço, M. A., M. Milosavljević, S. Galata, et al.. (2005). Silicon-based light emitting devices. Vacuum. 78(2-4). 551–556. 20 indexed citations
20.
Power, J. R., K. Fleischer, N. Esser, et al.. (2001). Influence of Sn on the optical anisotropy of single-domain Si(001). Physical review. B, Condensed matter. 63(8). 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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