D.H. Tassis

1.2k total citations
80 papers, 964 citations indexed

About

D.H. Tassis is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, D.H. Tassis has authored 80 papers receiving a total of 964 indexed citations (citations by other indexed papers that have themselves been cited), including 73 papers in Electrical and Electronic Engineering, 20 papers in Materials Chemistry and 19 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in D.H. Tassis's work include Semiconductor materials and devices (46 papers), Advancements in Semiconductor Devices and Circuit Design (39 papers) and Thin-Film Transistor Technologies (26 papers). D.H. Tassis is often cited by papers focused on Semiconductor materials and devices (46 papers), Advancements in Semiconductor Devices and Circuit Design (39 papers) and Thin-Film Transistor Technologies (26 papers). D.H. Tassis collaborates with scholars based in Greece, France and Belgium. D.H. Tassis's co-authors include C.A. Dimitriadis, A. Tsormpatzoglou, G. Ghibaudo, G. Kamarinos, N. A. Hastas, Konstantinos A. Papathanasiou, S. Logothetidis, G. Pananakakis, N. A. Economou and Nadine Collaert and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Applied Surface Science.

In The Last Decade

D.H. Tassis

76 papers receiving 922 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
D.H. Tassis Greece 18 873 251 159 87 40 80 964
Jianrong Dong China 14 504 0.6× 210 0.8× 333 2.1× 115 1.3× 31 0.8× 60 582
M. Beaudoin Canada 9 240 0.3× 164 0.7× 138 0.9× 53 0.6× 22 0.6× 28 350
Henry P. Lee United States 10 531 0.6× 321 1.3× 366 2.3× 224 2.6× 55 1.4× 30 774
Sylvain David France 15 569 0.7× 152 0.6× 284 1.8× 155 1.8× 33 0.8× 42 633
R. Carin France 13 470 0.5× 115 0.5× 103 0.6× 43 0.5× 90 2.3× 44 545
A. Kalnitsky United States 13 529 0.6× 186 0.7× 112 0.7× 92 1.1× 28 0.7× 47 602
S. Yamazaki Japan 16 661 0.8× 185 0.7× 164 1.0× 49 0.6× 49 1.2× 68 793
S. Sriram United States 14 606 0.7× 85 0.3× 180 1.1× 52 0.6× 99 2.5× 53 670
Nicolas Cavassilas France 16 644 0.7× 229 0.9× 390 2.5× 267 3.1× 85 2.1× 76 849
Amlan Majumdar United States 15 830 1.0× 141 0.6× 231 1.5× 266 3.1× 44 1.1× 45 938

Countries citing papers authored by D.H. Tassis

Since Specialization
Citations

This map shows the geographic impact of D.H. Tassis's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D.H. Tassis with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D.H. Tassis more than expected).

Fields of papers citing papers by D.H. Tassis

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D.H. Tassis. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D.H. Tassis. The network helps show where D.H. Tassis may publish in the future.

Co-authorship network of co-authors of D.H. Tassis

This figure shows the co-authorship network connecting the top 25 collaborators of D.H. Tassis. A scholar is included among the top collaborators of D.H. Tassis based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D.H. Tassis. D.H. Tassis is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Bucher, Matthias, et al.. (2023). TCAD simulation of organic field-effect transistors based on spray-coated small molecule organic semiconductor with an insulating polymer blend. Organic Electronics. 119. 106812–106812. 2 indexed citations
3.
Tassis, D.H., A. Tsormpatzoglou, T.A. Karatsori, et al.. (2022). Threshold voltage of p-type triple-gate junctionless transistors. Solid-State Electronics. 197. 108451–108451. 1 indexed citations
4.
Tsormpatzoglou, A., D.H. Tassis, Ilias O. Pappas, et al.. (2012). Compact Capacitance Model of Undoped or Lightly Doped Ultra-Scaled Triple-Gate FinFETs. IEEE Transactions on Electron Devices. 59(12). 3306–3312. 11 indexed citations
5.
Papathanasiou, Konstantinos A., Christoforos Theodorou, A. Tsormpatzoglou, et al.. (2011). Symmetrical unified compact model of short-channel double-gate MOSFETs. Solid-State Electronics. 69. 55–61. 16 indexed citations
6.
Ioannidis, E.G., A. Tsormpatzoglou, D.H. Tassis, et al.. (2010). Characterization of traps in the gate dielectric of amorphous and nanocrystalline silicon thin-film transistors by 1/f noise. Journal of Applied Physics. 108(10). 35 indexed citations
7.
Tassis, D.H., et al.. (2007). Effect of Channel Width on the Electrical Characteristics of Amorphous/Nanocrystalline Silicon Bilayer Thin-Film Transistors. IEEE Transactions on Electron Devices. 54(5). 1265–1269. 8 indexed citations
8.
Tassis, D.H., et al.. (2007). Study of the Drain Leakage Current in Bottom-Gated Nanocrystalline Silicon Thin-Film Transistors by Conduction and Low-Frequency Noise Measurements. IEEE Transactions on Electron Devices. 54(5). 1076–1082. 12 indexed citations
9.
Tsormpatzoglou, A., D.H. Tassis, C.A. Dimitriadis, et al.. (2006). Stress-induced local trap levels in Au/n-GaAs Schottky diodes with embedded InAs quantum dots. IEEE Electron Device Letters. 27(5). 320–322. 1 indexed citations
10.
Koutsouras, Dimitrios A., N. A. Hastas, D.H. Tassis, et al.. (2005). Depth distribution of traps in Au∕n-GaAs Schottky diodes with embedded InAs quantum dots. Journal of Applied Physics. 97(6). 6 indexed citations
11.
Tassis, D.H., N. A. Hastas, C.A. Dimitriadis, & G. Kamarinos. (2005). Improved analysis of low frequency noise in polycrystalline silicon thin-film transistors. Solid-State Electronics. 49(3). 513–515. 4 indexed citations
12.
Hastas, N. A., C.A. Dimitriadis, D.H. Tassis, & S. Logothetidis. (2001). Electrical characterization of nanocrystalline carbon–silicon heterojunctions. Applied Physics Letters. 79(5). 638–640. 21 indexed citations
13.
Hastas, N. A., C.A. Dimitriadis, D.H. Tassis, et al.. (2001). Electrical properties of magnetron sputtered amorphous carbon films with sequential sp3-rich/sp2-rich layered structure. Applied Physics Letters. 79(20). 3269–3271. 5 indexed citations
14.
Hastas, N. A., C.A. Dimitriadis, P. Patsalas, et al.. (2001). Structural, electrical, and low-frequency-noise properties of amorphous-carbon–silicon heterojunctions. Journal of Applied Physics. 89(5). 2832–2838. 16 indexed citations
15.
Hastas, N. A., C.A. Dimitriadis, Y. Panayiotatos, et al.. (2000). Noise characterization of sputtered amorphous carbon films. Journal of Applied Physics. 88(9). 5482–5484. 15 indexed citations
16.
Tassis, D.H., et al.. (1999). Low-frequency noise in polycrystalline semiconducting FeSi2 thin films. Journal of Applied Physics. 85(8). 4091–4095. 17 indexed citations
17.
Tassis, D.H., C.A. Dimitriadis, J. Brini, et al.. (1998). Low frequency noise in β-FeSi2/n-Si heterojunctions. Applied Physics Letters. 72(6). 713–715. 2 indexed citations
18.
Tassis, D.H., C.A. Dimitriadis, J. Arvanitidis, et al.. (1997). Influence of conventional furnace and rapid thermal annealing on the quality of polycrystalline β-FeSi2 thin films grown from vapor-deposited Fe/Si multilayers. Thin Solid Films. 310(1-2). 115–122. 10 indexed citations
19.
Dimitriadis, C.A., D.H. Tassis, J. Stoëmenos, & N. A. Economou. (1994). Bulk and Interface States in Polycrystalline Silicon Thin Film Transistors. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 37-38. 577–582. 2 indexed citations
20.
Dimitriadis, C.A., et al.. (1994). Influence of deposition pressure on the bulk and interface states in low pressure chemical vapor deposited polycrystalline silicon thin-film transistors. Applied Physics Letters. 64(20). 2709–2711. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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