D.H. Tassis

1.2k citations

80 papers · 964 indexed · h-index 18

Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices 46
- Advancements in Semiconductor Devices and Circuit Design 39
- Thin-Film Transistor Technologies 26
- Silicon Carbide Semiconductor Technologies 20
- Silicon and Solar Cell Technologies 18
- Integrated Circuits and Semiconductor Failure Analysis 8
Materials Chemistry
- Silicon Nanostructures and Photoluminescence 13
Atomic and Molecular Physics, and Optics
- Semiconductor materials and interfaces 17
Condensed Matter Physics
Electronic, Optical and Magnetic Materials

Co-authors: C.A. Dimitriadis A. Tsormpatzoglou G. Ghibaudo G. Kamarinos N. A. Hastas Konstantinos A. Papathanasiou G. Pananakakis S. Logothetidis
Cited by: Electrical and Electronic Engineering Materials Chemistry Atomic and Molecular Physics, and Optics
Journals: Journal of Applied Physics (17 papers)IEEE Transactions on Electron Devices (14 papers)Solid-State Electronics (10 papers)
Partner nations: Greece France Belgium

In The Last Decade

D.H. Tassis

76 papers receiving 922 citations

Peers

Countries citing papers authored by D.H. Tassis

Since Specialization

Citations

This map shows the geographic impact of D.H. Tassis's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D.H. Tassis with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D.H. Tassis more than expected).

Fields of papers citing papers by D.H. Tassis

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D.H. Tassis. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D.H. Tassis. The network helps show where D.H. Tassis may publish in the future.

Co-authorship network

The 25 scholars most cited alongside D.H. Tassis, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with D.H. Tassis Line = papers co-authored together D.H. Tassis links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Analytical modeling of nanoscale double-gate junctionless transistors comprising the impact of the source and drain underlap regions Solid-State Electronics ·C. Tiebe,A. Tsormpatzoglou,D.H. Tassis,林渭霞,Constantinos T. Angelis,C.A. Dimitriadis	2025	0
2	TCAD simulation of organic field-effect transistors based on spray-coated small molecule organic semiconductor with an insulating polymer blend Organic Electronics ·Ana Isabel Garrido Ocaña,Matthias Bucher,M. Gioti,D.H. Tassis	2023	2
3	Threshold voltage of p-type triple-gate junctionless transistors Solid-State Electronics ·林渭霞,D.H. Tassis,A. Tsormpatzoglou,T.A. Karatsori,Christoforos Theodorou,Sylvain Barraud,G. Ghibaudo,C.A. Dimitriadis	2022	1
4	Intermittency-induced criticality in the random telegraph noise of nanoscale UTBB FD-SOI MOSFETs Microelectronic Engineering ·Yiannis Contoyiannis,Stelios M. Potirakis,Stavros G. Stavrinides,M. P. Hanias,D.H. Tassis,Christoforos Theodorou	2019	8
5	Compact Capacitance Model of Undoped or Lightly Doped Ultra-Scaled Triple-Gate FinFETs IEEE Transactions on Electron Devices ·S R Osmer,A. Tsormpatzoglou,D.H. Tassis,Ilias O. Pappas,Konstantinos A. Papathanasiou,Matthias Bucher,G. Ghibaudo,C.A. Dimitriadis	2012	11
6	Symmetrical unified compact model of short-channel double-gate MOSFETs Solid-State Electronics ·Konstantinos A. Papathanasiou,Christoforos Theodorou,A. Tsormpatzoglou,D.H. Tassis,Lars Frostman,Matthias Bucher,G. Ghibaudo	2011	16
7	Characterization of traps in the gate dielectric of amorphous and nanocrystalline silicon thin-film transistors by 1/f noise Journal of Applied Physics ·E.G. Ioannidis,A. Tsormpatzoglou,D.H. Tassis,C.A. Dimitriadis,François Templier,G. Kamarinos	2010	35
8	Degradation of n-channel a-Si:H/nc-Si:H bilayer thin-film transistors under DC electrical stress Microelectronics Reliability ·Carlos Saibene,Keith Borg-Xuereb,D.H. Tassis,C.A. Dimitriadis,Chao Yu,I. Vilkkumaa,G. Kamarinos	2007	5
9	A Simple Polysilicon Thin-Film Transistor SPICE Model Ilias O. Pappas,Keith Borg-Xuereb,D.H. Tassis,Carlos Saibene,S. Siskos,Alkis Hatzopoulos,C.A. Dimitriadis,G. Kamarinos	2006	1
10	Stress-induced local trap levels in Au/n-GaAs Schottky diodes with embedded InAs quantum dots IEEE Electron Device Letters ·A. Tsormpatzoglou,D.H. Tassis,C.A. Dimitriadis,P. Frigeri,Stefano Franchi,E. Gombia,R. Mosca	2006	1
11	Improved analysis of low frequency noise in polycrystalline silicon thin-film transistors Solid-State Electronics ·D.H. Tassis,N. A. Hastas,C.A. Dimitriadis,G. Kamarinos	2005	4
12	Depth distribution of traps in Au∕n-GaAs Schottky diodes with embedded InAs quantum dots Journal of Applied Physics ·Dimitrios A. Koutsouras,N. A. Hastas,D.H. Tassis,C.A. Dimitriadis,P. Frigeri,Stefano Franchi,E. Gombia,R. Mosca	2005	6
13	Stability of hydrogenated in pure hydrogen plasma p-channel polycrystalline silicon thin-film transistors Solid-State Electronics ·N. A. Hastas,D.H. Tassis,C.A. Dimitriadis,J. Brini,G. Kamarinos	2003	1
14	Electrical properties of magnetron sputtered amorphous carbon films with sequential sp3-rich/sp2-rich layered structure Applied Physics Letters ·N. A. Hastas,C.A. Dimitriadis,D.H. Tassis,Y. Panayiotatos,S. Logothetidis,D. Papadimitriou	2001	5
15	Structural, electrical, and low-frequency-noise properties of amorphous-carbon–silicon heterojunctions Journal of Applied Physics ·N. A. Hastas,C.A. Dimitriadis,P. Patsalas,Y. Panayiotatos,D.H. Tassis,S. Logothetidis	2001	16
16	Noise characterization of sputtered amorphous carbon films Journal of Applied Physics ·N. A. Hastas,C.A. Dimitriadis,Y. Panayiotatos,D.H. Tassis,P. Patsalas,S. Logothetidis	2000	15
17	Low frequency noise in β-FeSi2/n-Si heterojunctions Applied Physics Letters ·D.H. Tassis,C.A. Dimitriadis,J. Brini,G. Kamarinos,M. Angelakeris,N. K. Flevaris	1998	2
18	Influence of conventional furnace and rapid thermal annealing on the quality of polycrystalline β-FeSi2 thin films grown from vapor-deposited Fe/Si multilayers Thin Solid Films ·D.H. Tassis,C.A. Dimitriadis,H SCHULTEN,J. Arvanitidis,S. Ves,S. C. Kokkou,S. Logothetidis,O. Valassiades,P. Poulopoulos,N. K. Flevaris	1997	10
19	Bulk and Interface States in Polycrystalline Silicon Thin Film Transistors Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena ·C.A. Dimitriadis,D.H. Tassis,J. Stoëmenos,N. A. Economou	1994	2
20	Determination of bulk states and interface states distributions in polycrystalline silicon thin-film transistors Journal of Applied Physics ·C.A. Dimitriadis,D.H. Tassis,N. A. Economou,A. Lowe	1993	54

About D.H. Tassis

D.H. Tassis is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry, having authored 80 papers that have together received 964 indexed citations. Recurring topics across this work include Semiconductor materials and devices (46 papers), Advancements in Semiconductor Devices and Circuit Design (39 papers), Thin-Film Transistor Technologies (26 papers), Silicon Carbide Semiconductor Technologies (20 papers), Silicon and Solar Cell Technologies (18 papers), Semiconductor materials and interfaces (17 papers), Silicon Nanostructures and Photoluminescence (13 papers) and Integrated Circuits and Semiconductor Failure Analysis (8 papers). The work is most often cited by research in Electrical and Electronic Engineering (873 citations), Materials Chemistry (251 citations) and Atomic and Molecular Physics, and Optics (159 citations). D.H. Tassis has collaborated with scholars based in Greece, France and Belgium. Frequent co-authors include C.A. Dimitriadis, A. Tsormpatzoglou, G. Ghibaudo, G. Kamarinos, N. A. Hastas, Konstantinos A. Papathanasiou, G. Pananakakis, S. Logothetidis, N. A. Economou and A. Lowe. Their work appears in journals such as Journal of Applied Physics, IEEE Transactions on Electron Devices, Solid-State Electronics, Applied Physics Letters and Semiconductor Science and Technology.

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