N. Shen

573 total citations
15 papers, 442 citations indexed

About

N. Shen is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, N. Shen has authored 15 papers receiving a total of 442 indexed citations (citations by other indexed papers that have themselves been cited), including 14 papers in Electrical and Electronic Engineering, 9 papers in Biomedical Engineering and 2 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in N. Shen's work include Nanowire Synthesis and Applications (9 papers), Advancements in Semiconductor Devices and Circuit Design (8 papers) and Semiconductor materials and devices (7 papers). N. Shen is often cited by papers focused on Nanowire Synthesis and Applications (9 papers), Advancements in Semiconductor Devices and Circuit Design (8 papers) and Semiconductor materials and devices (7 papers). N. Shen collaborates with scholars based in Singapore, China and Italy. N. Shen's co-authors include Dim‐Lee Kwong, H.Y. Yu, G. Q. Lo, Navab Singh, Navaneet Kumar Singh, G. Q. Lo, X. Li, Zhixian Chen, D. L. Kwong and W. Kuźmicz and has published in prestigious journals such as Materials Chemistry and Physics, IEEE Electron Device Letters and Solid-State Electronics.

In The Last Decade

N. Shen

14 papers receiving 420 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
N. Shen Singapore 10 404 139 38 33 31 15 442
Hiromi Yamauchi Japan 16 756 1.9× 100 0.7× 32 0.8× 30 0.9× 72 2.3× 65 794
Yonghyun Shim United States 10 381 0.9× 134 1.0× 20 0.5× 69 2.1× 97 3.1× 16 404
Xiao Sun Belgium 9 291 0.7× 28 0.2× 16 0.4× 32 1.0× 59 1.9× 36 325
Muh‐Dey Wei Germany 8 333 0.8× 82 0.6× 7 0.2× 30 0.9× 55 1.8× 87 368
G. Ghibaudo France 9 478 1.2× 71 0.5× 16 0.4× 36 1.1× 36 1.2× 14 501
Muhammed Ahosan Ul Karim United States 9 329 0.8× 100 0.7× 8 0.2× 19 0.6× 38 1.2× 17 355
K.‐E. Ehwald Germany 11 224 0.6× 102 0.7× 11 0.3× 55 1.7× 38 1.2× 37 312
Yuye Kang Singapore 16 657 1.6× 105 0.8× 32 0.8× 67 2.0× 216 7.0× 68 706
Shu An Singapore 10 166 0.4× 104 0.7× 89 2.3× 45 1.4× 106 3.4× 16 272
J. Drews Germany 9 228 0.6× 65 0.5× 15 0.4× 48 1.5× 25 0.8× 20 277

Countries citing papers authored by N. Shen

Since Specialization
Citations

This map shows the geographic impact of N. Shen's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by N. Shen with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites N. Shen more than expected).

Fields of papers citing papers by N. Shen

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by N. Shen. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by N. Shen. The network helps show where N. Shen may publish in the future.

Co-authorship network of co-authors of N. Shen

This figure shows the co-authorship network connecting the top 25 collaborators of N. Shen. A scholar is included among the top collaborators of N. Shen based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with N. Shen. N. Shen is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

15 of 15 papers shown
1.
Shen, N., Caiyin You, Na Tian, et al.. (2025). Regulation of dielectric properties for YIG/LFO composite thin films through varying the layer thickness ratio. Physica B Condensed Matter. 714. 417521–417521.
2.
Shen, N., et al.. (2024). Enhanced dielectric performance of Y3Fe5O12 via incorporating LiFe5O8 thin film. Materials Chemistry and Physics. 329. 130102–130102. 2 indexed citations
3.
4.
Hu, Fei, et al.. (2019). 3.5: Optimization of LTPS‐AMOLED Array Design to Enhance the Resistance to ESD risk. SID Symposium Digest of Technical Papers. 50(S1). 41–43. 3 indexed citations
5.
6.
Maly, W., Navab Singh, Zhenghua Chen, et al.. (2011). Twin gate, vertical slit FET (VeSFET) for highly periodic layout and 3D integration. International Conference Mixed Design of Integrated Circuits and Systems. 145–150. 52 indexed citations
7.
Kwong, D. L., X. Li, Yi Sun, et al.. (2011). Vertical Silicon Nanowire Platform for Low Power Electronics and Clean Energy Applications. Journal of Nanotechnology. 2012. 1–21. 33 indexed citations
8.
Gnani, Elena, A. Gnudi, Susanna Reggiani, et al.. (2011). Numerical investigation on the junctionless nanowire FET. Archivio istituzionale della ricerca (Alma Mater Studiorum Università di Bologna). 1–4. 15 indexed citations
9.
Gnani, Elena, A. Gnudi, Susanna Reggiani, et al.. (2011). Numerical investigation on the junctionless nanowire FET. Solid-State Electronics. 71. 13–18. 19 indexed citations
10.
Yu, H.Y., Yajuan Sun, Navab Singh, et al.. (2011). High-Performance Poly-Si Vertical Nanowire Thin-Film Transistor and the Inverter Demonstration. IEEE Electron Device Letters. 32(6). 770–772. 10 indexed citations
11.
Leong, Victor, Eldwin J. Ng, Jeffrey Bo Woon Soon, et al.. (2011). Vertical silicon nano-pillar for non-volatile memory. 649–652. 8 indexed citations
12.
Shen, N., Hui Yu, Zhixian Chen, et al.. (2011). Fabrication And Characterization Of Poly-Si Vertical Nanowire Thin Film Transistor. Zenodo (CERN European Organization for Nuclear Research). 3 indexed citations
13.
Yu, H.Y., et al.. (2010). Multibit Programmable Flash Memory Realized on Vertical Si Nanowire Channel. IEEE Electron Device Letters. 31(5). 390–392. 42 indexed citations
14.
Yu, H.Y., Navab Singh, N. Shen, et al.. (2009). Vertical-Si-Nanowire SONOS Memory for Ultrahigh-Density Application. IEEE Electron Device Letters. 30(8). 879–881. 19 indexed citations
15.
Yu, H.Y., et al.. (2009). Demonstration of Tunneling FETs Based on Highly Scalable Vertical Silicon Nanowires. IEEE Electron Device Letters. 30(7). 754–756. 169 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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