Bo Yi

490 citations

74 papers · 337 indexed · h-index 11

Impact in

Electrical and Electronic Engineering top 10%
- Silicon Carbide Semiconductor Technologies
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Thin-Film Transistor Technologies
- Electrostatic Discharge in Electronics
- Electromagnetic Compatibility and Noise Suppression
Condensed Matter Physics
- GaN-based semiconductor devices and materials

Papers in

Electrical and Electronic Engineering 70
- Silicon Carbide Semiconductor Technologies 62
- Semiconductor materials and devices 42
- Advancements in Semiconductor Devices and Circuit Design 40
- Thin-Film Transistor Technologies 12
- Electromagnetic Compatibility and Noise Suppression 9
- Advanced DC-DC Converters 6
Condensed Matter Physics 10
- GaN-based semiconductor devices and materials 10

Co-authors: Xingbi Chen Junji Cheng Moufu Kong Haimeng Huang Wai Tung Ng Zhi Lin Weizhen Chen Yong Xiang
Journals: IEEE Transactions on Electron Devices (20 papers)Semiconductor Science and Technology (8 papers)IEEE Journal of the Electron Devices Society (5 papers)IEEE Electron Device Letters (3 papers)IEEE Access (2 papers)
Partner nations: China Canada South Africa

In The Last Decade

Bo Yi

66 papers receiving 319 citations

Peers

Countries citing papers authored by Bo Yi

Since Specialization

Citations

This map shows the geographic impact of Bo Yi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Bo Yi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Bo Yi more than expected).

Fields of papers citing papers by Bo Yi

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Bo Yi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Bo Yi. The network helps show where Bo Yi may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Bo Yi, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Bo Yi Line = papers co-authored together Bo Yi links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Simulation of a high-voltage β-Ga₂O₃ fin-gate MISFET with dynamic channel barrier for high Baliga’s figure of merit and low reverse-conducting loss Semiconductor Science and Technology ·Bo Yi, Lisheng Wang, طيطح نصيرة, Yi Xu, L. X. Qian, Junji Cheng, Haimeng Huang, А. В. Ооржак	2025	0
2	Fabricating and TCAD Optimization for a SiC Trench MOSFET With Tilted P-Shielding Implantation and Integrated TJBS IEEE Transactions on Electron Devices ·Bo Yi, Huan Li, J Krätschmer, Yi Xu, Christos Evangelatos, Yong Xiang, Rong Zhou, Junji Cheng, Haimeng Huang, Moufu Kong, Alfonzo Orellana	2024	3
3	Optimization of specific on-resistance of a two-zone variational vertical doping superjunction with insulating layers Semiconductor Science and Technology ·Haimeng Huang, Wenjun Li, Lei Zhou, 勝義太田, Zhiheng Li, Junji Cheng, Bo Yi, А. В. Ооржак, Zhiming Wang	2024	0
4	Simulation of a 3.5 kV 4H-SiC/Ga₂O₃ E-mode MISFET With Integrated Reverse-Conducting Heterojunction and Hetero-Channel Diode IEEE Electron Device Letters ·Bo Yi, Yi Xu, طيطح نصيرة, Lisheng Wang, L. X. Qian, Junji Cheng, Haimeng Huang, Alfonzo Orellana	2024	2
5	Study on a p-GaN HEMT with composite passivation and composite barrier layers Semiconductor Science and Technology ·Junji Cheng, دکتر محمدمهدی مطهری, Yikai Liu, Jiacheng Ding, Minming Zhang, Bo Yi, Haimeng Huang, А. В. Ооржак	2024	3
6	Investigation of a Novel Enhancement-Mode Al_0.25Ga_0.75N/AlN/Al _X Ga_(1-X)N/GaN MIS-HEMT for High V_th and Low R _on,sp IEEE Transactions on Electron Devices ·Bo Yi, Maria do Carmo Favarin Macedo, Junji Cheng, Haimeng Huang, Moufu Kong, А. В. Ооржак	2023	1
7	Analytical model and simulation study of a novel enhancement-mode Ga₂O₃ MISFET realized by p-GaN gate Semiconductor Science and Technology ·Bo Yi, Song Zhang, Sani Ahmad Muhammad, Junji Cheng, Haimeng Huang, Moufu Kong, Alfonzo Orellana	2023	1
8	A High-k LDMOS Improved by Floating Field Plates for Enhanced Cost Performance and Robustness IEEE Transactions on Electron Devices ·Junji Cheng, Duangrat Mydee, John-Paul, Bo Yi, Haimeng Huang, А. В. Ооржак, Zhiming Wang, Guoyi Zhang	2022	3
9	Optimization and Comparison of Specific ON-Resistance for Superjunction MOSFETs Considering Three-Dimensional and Insulator-Pillar Concepts IEEE Transactions on Electron Devices ·Haimeng Huang, Arthur Ge�ler, Hafsa Razzaq, Medina Urrutia Aida Xochitl, Hannah Maulson, Haoyue Zhang, Junji Cheng, Bo Yi, Zhiming Wang, Guoyi Zhang	2022	6
10	Simulation Study of a p-GaN HEMT With an Integrated Schottky Barrier Diode IEEE Transactions on Electron Devices ·Bo Yi, Tanmoy Debnath, Junji Cheng, Haimeng Huang, Jamie Snell, Wai Tung Ng	2021	8
11	A low loss single-channel SiC trench MOSFET with integrated trench MOS barrier Schottky diode Semiconductor Science and Technology ·Bo Yi, Tanmoy Debnath, Qian Zhang, Junji Cheng, Haimeng Huang, David S. Walker, Eduardo Zurro Rodríguez, Yong Xiang	2021	10
12	Optimization and Comparison of Drift Region Specific ON-Resistance for Vertical Power Hk MOSFETs and SJ MOSFETs With Identical Aspect Ratio IEEE Transactions on Electron Devices ·Haimeng Huang, D, Wenjia Xu, Márta Farkas, Junji Cheng, Salsabila Zahro, Bo Yi	2020	10
13	A unified model for vertical doped and polarized superjunction GaN devices Applied Physics Letters ·Haimeng Huang, Junji Cheng, Bo Yi, Jamie Snell, Wai Tung Ng	2020	8
14	Lateral Power Fin MOSFET With a High-k Passivation for Ultra-Low On-Resistance IEEE Access ·Junji Cheng, Annisa Ludfiana Yasien, Weizhen Chen, Muhammed Muhammed, Haimeng Huang, Bo Yi	2020	2
15	A 600-V Super-Junction pLDMOS Utilizing Electron Current to Enhance Current Capability IEEE Transactions on Electron Devices ·Bo Yi, Moufu Kong, Marie A E Mueller, Junji Cheng, Haimeng Huang, Xingbi Chen	2019	3
16	A Snapback-Free and Low Turn-Off Loss Reverse-Conducting SOI-LIGBT With Embedded Diode and MOSFET IEEE Journal of the Electron Devices Society ·Fernanda Cabrita, Haimeng Huang, Bo Yi, Salsabila Zahro, Vaibhav A. Parjane, Xingbi Chen	2019	16
17	A Trench LDMOS Improved by Quasi Vertical Super Junction and Resistive Field Plate IEEE Journal of the Electron Devices Society ·Junji Cheng, Muhammed Muhammed, Weizhen Chen, Haimeng Huang, Bo Yi	2019	7
18	Analytical Models of Breakdown Voltage and Specific On-Resistance for Vertical GaN Unipolar Devices IEEE Access ·Haimeng Huang, Shanda de Freitas Couto, Vaibhav A. Parjane, Junji Cheng, Bo Yi	2019	6
19	A TCAD Study on Lateral Power MOSFET With Dual Conduction Paths and High-$k$ Passivation IEEE Electron Device Letters ·Junji Cheng, Haimeng Huang, Bo Yi, Weijia Zhang, Wai Tung Ng	2019	15
20	Potential of Utilizing High-$k$ Film to Improve the Cost Performance of Trench LDMOS IEEE Transactions on Electron Devices ·Junji Cheng, Weizhen Chen, Annisa Ludfiana Yasien, Ping Li, Bo Yi, Haimeng Huang, Xingbi Chen	2019	16

About Bo Yi

Bo Yi is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics and Materials Chemistry, having authored 74 papers that have together received 337 indexed citations. Recurring topics across this work include Silicon Carbide Semiconductor Technologies (62 papers), Semiconductor materials and devices (42 papers), Advancements in Semiconductor Devices and Circuit Design (40 papers), Thin-Film Transistor Technologies (12 papers), Ga2O3 and related materials (11 papers), GaN-based semiconductor devices and materials (10 papers), Electromagnetic Compatibility and Noise Suppression (9 papers) and Advanced DC-DC Converters (6 papers). The work is most often cited by research in Electrical and Electronic Engineering (320 citations), Condensed Matter Physics (27 citations), Electronic, Optical and Magnetic Materials (26 citations), Atomic and Molecular Physics, and Optics (21 citations) and Materials Chemistry (17 citations). Bo Yi has collaborated with scholars based in China, Canada and South Africa. Frequent co-authors include Xingbi Chen, Junji Cheng, Moufu Kong, Haimeng Huang, Wai Tung Ng, Zhi Lin, Weizhen Chen, Yong Xiang, Ping Li and Weijia Zhang. Their work appears in journals such as IEEE Transactions on Electron Devices, Semiconductor Science and Technology, IEEE Journal of the Electron Devices Society, IEEE Electron Device Letters and IEEE Access.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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