D. Schlenker

693 total citations
22 papers, 507 citations indexed

About

D. Schlenker is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Condensed Matter Physics. According to data from OpenAlex, D. Schlenker has authored 22 papers receiving a total of 507 indexed citations (citations by other indexed papers that have themselves been cited), including 22 papers in Atomic and Molecular Physics, and Optics, 20 papers in Electrical and Electronic Engineering and 5 papers in Condensed Matter Physics. Recurrent topics in D. Schlenker's work include Semiconductor Quantum Structures and Devices (22 papers), Semiconductor Lasers and Optical Devices (16 papers) and Photonic and Optical Devices (12 papers). D. Schlenker is often cited by papers focused on Semiconductor Quantum Structures and Devices (22 papers), Semiconductor Lasers and Optical Devices (16 papers) and Photonic and Optical Devices (12 papers). D. Schlenker collaborates with scholars based in Japan and Germany. D. Schlenker's co-authors include Fumio Koyama, Kenichi Iga, Tomoyuki Miyamoto, Masao Kawaguchi, Takashi Kondo, Zhongqi Pan, Akihiro Matsutani, Takahiro Sakaguchi, Shunichi Sato and Shigeki Makino and has published in prestigious journals such as Journal of Applied Physics, Japanese Journal of Applied Physics and Journal of Crystal Growth.

In The Last Decade

D. Schlenker

22 papers receiving 464 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
D. Schlenker Japan 13 489 478 153 44 36 22 507
S. Illek Germany 15 461 0.9× 597 1.2× 161 1.1× 36 0.8× 38 1.1× 52 654
D. Gollub Germany 14 416 0.9× 351 0.7× 173 1.1× 62 1.4× 20 0.6× 28 442
S. Reinhard Germany 10 391 0.8× 362 0.8× 99 0.6× 69 1.6× 32 0.9× 20 436
L. F. Luo United States 15 597 1.2× 576 1.2× 43 0.3× 66 1.5× 19 0.5× 22 665
W. T. Beard United States 12 560 1.1× 505 1.1× 73 0.5× 89 2.0× 46 1.3× 24 660
M. Thomas United States 12 369 0.8× 172 0.4× 111 0.7× 60 1.4× 22 0.6× 23 386
N. Hossain United Kingdom 7 335 0.7× 287 0.6× 77 0.5× 82 1.9× 29 0.8× 16 377
F. Höhnsdorf Germany 10 619 1.3× 553 1.2× 305 2.0× 67 1.5× 38 1.1× 17 638
A. R. Kovsh Germany 15 752 1.5× 730 1.5× 74 0.5× 164 3.7× 35 1.0× 45 797
G. Danan United States 6 563 1.2× 258 0.5× 120 0.8× 104 2.4× 41 1.1× 10 574

Countries citing papers authored by D. Schlenker

Since Specialization
Citations

This map shows the geographic impact of D. Schlenker's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Schlenker with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Schlenker more than expected).

Fields of papers citing papers by D. Schlenker

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Schlenker. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Schlenker. The network helps show where D. Schlenker may publish in the future.

Co-authorship network of co-authors of D. Schlenker

This figure shows the co-authorship network connecting the top 25 collaborators of D. Schlenker. A scholar is included among the top collaborators of D. Schlenker based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D. Schlenker. D. Schlenker is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Schlenker, D., et al.. (2003). Long wavelength GaInAs/GaAs quantum well lasers. 9. 499–502. 1 indexed citations
2.
Pan, Z., Tomoyuki Miyamoto, D. Schlenker, Fumio Koyama, & Kenichi Iga. (2002). Quality improvement of GaInNAs/GaAs quantum wells grown by MOCVD using tertiarybutylarsine. 9. 135–138. 1 indexed citations
3.
Kondo, Takashi, D. Schlenker, Tomoyuki Miyamoto, et al.. (2001). Lasing Characteristics of 1.2 µm Highly Strained GaInAs/GaAs Quantum Well Lasers. Japanese Journal of Applied Physics. 40(2R). 467–467. 31 indexed citations
4.
Koyama, Fumio, D. Schlenker, Tomoyuki Miyamoto, et al.. (2000). Data transmission over single-mode fiber by using 1.2-μm uncooled GaInAs-GaAs laser for Gb/s local area network. IEEE Photonics Technology Letters. 12(2). 125–127. 23 indexed citations
5.
Kawaguchi, Masao, Tomoyuki Miyamoto, D. Schlenker, et al.. (2000). Optical Quality Dependence on Growth Rate for Metalorganic Chemical Vapor Deposition Grown GaInNAs/GaAs. Japanese Journal of Applied Physics. 39(12A). L1219–L1219. 12 indexed citations
6.
Schlenker, D., Tomoyuki Miyamoto, Masao Kawaguchi, et al.. (2000). Critical layer thickness of 1.2-μm highly strained GaInAs/GaAs quantum wells. Journal of Crystal Growth. 221(1-4). 503–508. 17 indexed citations
7.
Miyamoto, Tomoyuki, Takeo Kageyama, Shigeki Makino, et al.. (2000). CBE and MOCVD growth of GaInNAs. Journal of Crystal Growth. 209(2-3). 339–344. 41 indexed citations
8.
Kawaguchi, Masao, D. Schlenker, Takashi Kondo, et al.. (2000). Low threshold current density operation of GaInNAsquantum well lasers grown by metalorganic chemical vapourdeposition. Electronics Letters. 36(21). 1776–1777. 25 indexed citations
9.
Schlenker, D., et al.. (2000). Growth of highly strained GaInAs/GaAs quantum wells for 1.2 μm wavelength lasers. Journal of Crystal Growth. 209(1). 27–36. 66 indexed citations
10.
Schlenker, D., et al.. (1999). High temperature characteristics of highly strained 1.2 /spl mu/m InGaAs/GaAs quantum well lasers. 1311–1314 vol.2. 2 indexed citations
11.
Schlenker, D., et al.. (1999). 1.17-μm highly strained GaInAs-GaAs quantum-well laser. IEEE Photonics Technology Letters. 11(8). 946–948. 36 indexed citations
12.
Koyama, Fumio, D. Schlenker, Tomoyuki Miyamoto, et al.. (1999). 1.2 µm highly strained GaInAs/GaAs quantumwell lasers for singlemode fibre datalink. Electronics Letters. 35(13). 1079–1081. 48 indexed citations
13.
Chen, Zhibiao, D. Schlenker, Tomoyuki Miyamoto, et al.. (1999). High Temperature Characteristics of Nearly 1.2 µm GaInAs/GaAs/AlGaAs Lasers. Japanese Journal of Applied Physics. 38(10B). L1178–L1178. 10 indexed citations
14.
Koyama, Fumio, et al.. (1999). 1.2-μm GaInAs/GaAs lasers: are they useful for high-capacity single-mode fiber datacom?. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 3899. 290–290. 1 indexed citations
15.
Schlenker, D., et al.. (1999). Miscibility gap calculation for Ga1−xInxNyAs1−y including strain effects. Journal of Crystal Growth. 196(1). 67–70. 33 indexed citations
16.
Schlenker, D., et al.. (1999). Effect of Surface Quality on Overgrowth of Highly Strained GaInAs/GaAs Quantum Wells and Improvement by a Strained Buffer Layer. Japanese Journal of Applied Physics. 38(9R). 5023–5023. 25 indexed citations
17.
Koyama, Fumio, D. Schlenker, Tomoyuki Miyamoto, et al.. (1999). Highly strained GaInAs/GaAs QW for 1.2 /spl mu/m surface emitting lasers. III23–III24. 1 indexed citations
18.
Pan, Zhongqi, Tomoyuki Miyamoto, D. Schlenker, et al.. (1998). Low temperature growth of GaInNAs/GaAs quantum wells by metalorganic chemical vapor deposition using tertiarybutylarsine. Journal of Applied Physics. 84(11). 6409–6411. 33 indexed citations
19.
Miyamoto, Tomoyuki, et al.. (1998). GaNAs/GaInAs short-period superlattice quantum well structures grown by MOCVD using TBAs and DMHy. Journal of Crystal Growth. 195(1-4). 421–426. 12 indexed citations
20.

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