P. Vogl

9.5k total citations · 4 hit papers
124 papers, 7.3k citations indexed

About

P. Vogl is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Condensed Matter Physics. According to data from OpenAlex, P. Vogl has authored 124 papers receiving a total of 7.3k indexed citations (citations by other indexed papers that have themselves been cited), including 87 papers in Atomic and Molecular Physics, and Optics, 66 papers in Electrical and Electronic Engineering and 30 papers in Condensed Matter Physics. Recurrent topics in P. Vogl's work include Semiconductor Quantum Structures and Devices (56 papers), Quantum and electron transport phenomena (36 papers) and Advancements in Semiconductor Devices and Circuit Design (29 papers). P. Vogl is often cited by papers focused on Semiconductor Quantum Structures and Devices (56 papers), Quantum and electron transport phenomena (36 papers) and Advancements in Semiconductor Devices and Circuit Design (29 papers). P. Vogl collaborates with scholars based in Germany, United States and Austria. P. Vogl's co-authors include Jacek A. Majewski, Andreas Görling, Martin Rieger, M. Cardona, Mel Levy, A. Seidl, M. Städele, G. Zandler, Marcel Graf and Tillmann Kubis and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

P. Vogl

122 papers receiving 7.1k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Generalized Kohn-Sham schemes and the band-gap problem

1996 980 citations Andreas Görling, P. Vogl et al. Physical review. B, Condensed matter profile →
Electronic-band parameters in strainedSi1−xGexalloys onSi1−yGeysubstrates

1993 495 citations P. Vogl et al. Physical review. B, Condensed matter profile →
nextnano: General Purpose 3-D Simulations

2007 487 citations M. Sabathil, P. Vogl et al. profile →
Theory of Substitutional Deep Traps in Covalent Semiconductors

1980 457 citations P. Vogl et al. Physical Review Letters profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
P. Vogl Germany	37	4.1k	3.7k	2.9k	1.3k	881	124	7.3k
Y. P. Varshni Canada	31	4.5k 1.1×	3.6k 1.0×	3.2k 1.1×	908 0.7×	729 0.8×	163	7.8k
Giovanni Onida Italy	36	3.9k 1.0×	2.8k 0.7×	4.4k 1.5×	872 0.6×	1.0k 1.1×	133	7.8k
Raffaele Resta Italy	45	5.8k 1.4×	2.9k 0.8×	5.3k 1.9×	2.0k 1.5×	2.2k 2.5×	156	10.3k
M. D. Sturge United States	40	4.7k 1.1×	3.1k 0.8×	2.7k 0.9×	781 0.6×	746 0.8×	117	6.7k
John W. Wilkins United States	53	6.4k 1.6×	2.6k 0.7×	2.7k 1.0×	3.3k 2.5×	1.5k 1.7×	201	9.9k
F. Bassani Italy	45	5.8k 1.4×	2.5k 0.7×	2.5k 0.9×	808 0.6×	460 0.5×	187	7.6k
Lucia Reining France	51	5.9k 1.4×	3.9k 1.1×	6.4k 2.3×	1.7k 1.2×	1.7k 2.0×	136	11.5k
G. P. Srivastava United Kingdom	32	2.6k 0.6×	1.8k 0.5×	2.5k 0.9×	982 0.7×	810 0.9×	383	5.0k
D. M. Newns United Kingdom	44	5.1k 1.2×	1.7k 0.4×	1.5k 0.5×	2.0k 1.5×	997 1.1×	97	7.4k
E. W. Plummer United States	61	8.9k 2.2×	2.2k 0.6×	4.6k 1.6×	1.2k 0.9×	720 0.8×	221	11.5k

Countries citing papers authored by P. Vogl

Since Specialization

Citations

This map shows the geographic impact of P. Vogl's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. Vogl with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. Vogl more than expected).

Fields of papers citing papers by P. Vogl

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. Vogl. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. Vogl. The network helps show where P. Vogl may publish in the future.

Co-authorship network of co-authors of P. Vogl

This figure shows the co-authorship network connecting the top 25 collaborators of P. Vogl. A scholar is included among the top collaborators of P. Vogl based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with P. Vogl. P. Vogl is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Vogl, P., et al.. (2023). Model-based framework for lean information logistics in digital production. Procedia CIRP. 118. 80–85. 2 indexed citations

Vogl, P., et al.. (2011). Real-space multiband envelope-function approach without spurious solutions. Physical Review B. 84(19). 23 indexed citations

Vogl, P., et al.. (2009). Prediction of giant intrinsic spin-Hall effect in strained p-GaAs quantum wells. Journal of Physics Conference Series. 193. 12103–12103. 2 indexed citations

Finley, Jonathan J., M. Sabathil, Ruth Oulton, et al.. (2004). Systematic reduction of the permanent exciton dipole for charged excitons in individual self-assembled InGaAs quantum dots. Physica E Low-dimensional Systems and Nanostructures. 21(2-4). 199–203. 2 indexed citations

Vogl, P., et al.. (2002). Multiscale approaches for metal thin film growth. Computational Materials Science. 24(1-2). 58–65. 8 indexed citations

Vogl, P., et al.. (2000). Model of room-temperature resonant-tunneling current in metal/insulator and insulator/insulator heterostructures. Physical review. B, Condensed matter. 62(11). 7289–7297. 35 indexed citations

Majewski, Jacek A., G. Zandler, & P. Vogl. (2000). Novel Nitride Devices Based on Polarization Fields. physica status solidi (a). 179(1). 285–293. 10 indexed citations

Oberhuber, R., G. Zandler, & P. Vogl. (1998). Mobility enhancement of two-dimensional holes in strained Si/SiGe MOSFETs. European Solid-State Device Research Conference. 524–527. 1 indexed citations

Majewski, Jacek A. & P. Vogl. (1998). Polarization and band offsets of stacking faults in AlN and GaN. MRS Internet Journal of Nitride Semiconductor Research. 3. 14 indexed citations

10.

Zandler, G., et al.. (1997). Prospects of Ga/In/Al–N Nanometer Devices: Electronic Structure, Scattering Rates, and High Field Transport. physica status solidi (b). 204(1). 133–135. 9 indexed citations

11.

Städele, M., Jacek A. Majewski, P. Vogl, & Andreas Görling. (1997). Exact Kohn-Sham Exchange Potential in Semiconductors. Physical Review Letters. 79(11). 2089–2092. 295 indexed citations

12.

Morifuji, Masato, et al.. (1997). Wannier-Stark Resonance of Zener Current through a Superlattice in a p–i–n Diode. physica status solidi (b). 204(1). 368–373. 4 indexed citations

13.

Vogl, P., Marcel Graf, & Andreas Görling. (1997). Let there be Light in Tight Binding. MRS Proceedings. 491. 1 indexed citations

14.

Abstreiter, G., J. Olajos, R. Schorer, P. Vogl, & W. Wegscheider. (1993). Properties of Sn/Ge superlattices. Semiconductor Science and Technology. 8(1S). S6–S8. 5 indexed citations

15.

Majewski, Jacek A. & P. Vogl. (1992). Self-interaction-corrected density-functional formalism. I. Ground-state properties of the Hubbard-Peierls model. Physical review. B, Condensed matter. 46(19). 12219–12234. 31 indexed citations

16.

Kiener, Christoph, G. Zandler, G. Böhm, et al.. (1992). Experimental and theoretical investigation of the drift velocity and velocity distribution function in GaAs/AlGaAs heterostructures. Semiconductor Science and Technology. 7(3B). B267–B270. 1 indexed citations

17.

Vogl, P. & David Campbell. (1990). First-principles calculations of the three-dimensional structure and intrinsic defects intrans-polyacetylene. Physical review. B, Condensed matter. 41(18). 12797–12817. 110 indexed citations

18.

Rieger, M. & P. Vogl. (1989). New lattice gas method for semiconductor transport simulations. Solid-State Electronics. 32(12). 1399–1403. 6 indexed citations

19.

Vogl, P., David Campbell, & Otto F. Sankey. (1989). Theory of 3-D structure and intrinsic defects of transpolyacetylene. Synthetic Metals. 28(3). D513–D520. 14 indexed citations

20.

Vogl, P.. (1976). Microscopic theory of electron-phonon interaction in insulators or semiconductors. Physical review. B, Solid state. 13(2). 694–704. 84 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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