Tsuguo Inata

1.1k total citations
32 papers, 860 citations indexed

About

Tsuguo Inata is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Condensed Matter Physics. According to data from OpenAlex, Tsuguo Inata has authored 32 papers receiving a total of 860 indexed citations (citations by other indexed papers that have themselves been cited), including 32 papers in Atomic and Molecular Physics, and Optics, 25 papers in Electrical and Electronic Engineering and 2 papers in Condensed Matter Physics. Recurrent topics in Tsuguo Inata's work include Semiconductor Quantum Structures and Devices (31 papers), Quantum and electron transport phenomena (13 papers) and Semiconductor Lasers and Optical Devices (12 papers). Tsuguo Inata is often cited by papers focused on Semiconductor Quantum Structures and Devices (31 papers), Quantum and electron transport phenomena (13 papers) and Semiconductor Lasers and Optical Devices (12 papers). Tsuguo Inata collaborates with scholars based in Japan, China and Germany. Tsuguo Inata's co-authors include Shunichi Muto, Toshio Fujii, S. Hiyamizu, Atsushi Tackeuchi, Yoshiaki Nakata, H. Ohnìshì, Naoki Yokoyama, Yoshihiro Sugiyama, A. Shibatomi and Shigehiko Sasa and has published in prestigious journals such as Applied Physics Letters, Japanese Journal of Applied Physics and Journal of Crystal Growth.

In The Last Decade

Tsuguo Inata

32 papers receiving 817 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Tsuguo Inata Japan 16 821 693 72 60 31 32 860
N. J. Sauer United States 19 875 1.1× 835 1.2× 143 2.0× 60 1.0× 50 1.6× 57 1.1k
M. Defour France 16 565 0.7× 510 0.7× 104 1.4× 62 1.0× 33 1.1× 30 643
M. Bichler Germany 15 661 0.8× 332 0.5× 124 1.7× 145 2.4× 21 0.7× 33 714
H. Hier United States 15 604 0.7× 632 0.9× 104 1.4× 53 0.9× 11 0.4× 56 703
K. Johnsen Denmark 8 481 0.6× 302 0.4× 82 1.1× 33 0.6× 97 3.1× 17 561
S. Seki Japan 14 470 0.6× 664 1.0× 55 0.8× 18 0.3× 77 2.5× 36 692
Dave Welch United States 15 364 0.4× 745 1.1× 64 0.9× 18 0.3× 51 1.6× 49 802
M. Zaknoune France 16 392 0.5× 774 1.1× 38 0.5× 89 1.5× 28 0.9× 69 838
C. Minot France 11 308 0.4× 202 0.3× 54 0.8× 27 0.5× 25 0.8× 41 356
C. Lindström United States 10 432 0.5× 436 0.6× 31 0.4× 26 0.4× 75 2.4× 35 513

Countries citing papers authored by Tsuguo Inata

Since Specialization
Citations

This map shows the geographic impact of Tsuguo Inata's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Tsuguo Inata with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Tsuguo Inata more than expected).

Fields of papers citing papers by Tsuguo Inata

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Tsuguo Inata. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Tsuguo Inata. The network helps show where Tsuguo Inata may publish in the future.

Co-authorship network of co-authors of Tsuguo Inata

This figure shows the co-authorship network connecting the top 25 collaborators of Tsuguo Inata. A scholar is included among the top collaborators of Tsuguo Inata based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Tsuguo Inata. Tsuguo Inata is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Muto, Shunichi & Tsuguo Inata. (1994). InGaAs-based resonant tunnelling barrier structures grown by MBE. Semiconductor Science and Technology. 9(6). 1157–1170. 13 indexed citations
2.
Tackeuchi, Atsushi, Tsuguo Inata, Yoshiaki Nakata, et al.. (1992). Picosecond signal recovery in type II tunneling bi-quantum well etalon. Applied Physics Letters. 61(16). 1892–1894. 8 indexed citations
3.
Tackeuchi, Atsushi, Yoshihiro Sugiyama, Tsuguo Inata, & Shunichi Muto. (1992). Differences in Tunneling Time between 77 K and Room Temperature for Tunneling Biquantum Wells. Japanese Journal of Applied Physics. 31(12R). 3823–3823. 7 indexed citations
4.
Inata, Tsuguo, Yoshihiro Nakata, & Shunichi Muto. (1992). Optical control of GaAsSb/InGaAs staggered resonant tunnelling barrier structures grown by MBE. Semiconductor Science and Technology. 7(3B). B465–B467. 1 indexed citations
5.
Tackeuchi, Atsushi, Shunichi Muto, Tsuguo Inata, & Toshio Fujii. (1991). Time Evolution of Excitonic Absorption Bleaching of Resonant Tunneling Bi-Quantum-Well Structures. Japanese Journal of Applied Physics. 30(11R). 2730–2730. 2 indexed citations
6.
Tackeuchi, Atsushi, Shunichi Muto, Tsuguo Inata, & Toshio Fujii. (1991). Fast recovery of excitonic absorption bleaching in tunneling biquantum well structures. Applied Physics Letters. 58(15). 1670–1672. 23 indexed citations
7.
Muto, Shunichi, Tsuguo Inata, Atsushi Tackeuchi, Yoshihiro Sugiyama, & Toshio Fujii. (1991). Longitudinal-optical-phonon assisted tunneling in tunneling bi-quantum well structures. Applied Physics Letters. 58(21). 2393–2395. 29 indexed citations
8.
Nakata, Yoshihiro, Yoshihiro Sugiyama, Tsuguo Inata, et al.. (1990). InGaAs/AWAsSb Heterostructures Lattice-Matched to InP GRown by Molecular Beam Epitaxy. MRS Proceedings. 198. 29 indexed citations
9.
Inata, Tsuguo, et al.. (1989). Determination of the resonant-state energy of an In0.53Ga0.47As/AlAs pseudomorphic resonant tunneling barrier grown by MBE. Journal of Crystal Growth. 95(1-4). 371–374. 4 indexed citations
10.
Tackeuchi, Atsushi, Shunichi Muto, Tsuguo Inata, & Toshio Fujii. (1989). Fast Recovery of Excitonic Absorption Peaks in Tunneling Bi-Quantum-Well Structures. Japanese Journal of Applied Physics. 28(7A). L1098–L1098. 19 indexed citations
11.
Ishikawa, Hideaki, et al.. (1988). Selectively Doped GaAs/N-Al0.3Ga0.7As Heterostructures Grown by Gas-Source MBE. Japanese Journal of Applied Physics. 27(5A). L896–L896. 4 indexed citations
12.
Inata, Tsuguo, Shunichi Muto, Yoshiaki Nakata, et al.. (1987). A Pseudomorphic In0.53Ga0.47As/AlAs Resonant Tunneling Barrier with a Peak-to-Valley Current Ratio of 14 at Room Temperature. Japanese Journal of Applied Physics. 26(8A). L1332–L1332. 79 indexed citations
13.
Hiyamizu, S., Toshio Fujii, Shunichi Muto, et al.. (1987). MBE growth of InGaAs-InGaAlAs heterostructures for applications to high-speed devices. Journal of Crystal Growth. 81(1-4). 349–358. 26 indexed citations
14.
Muto, Shunichi, Tsuguo Inata, Yoshihiro Sugiyama, et al.. (1987). Quantum Well Width Dependence of Negative Differential Resistance of In0.52Al0.48As/In0.53Ga0.47As Resonant Tunneling Barriers Grown by MBE. Japanese Journal of Applied Physics. 26(3A). L220–L220. 22 indexed citations
15.
Sugiyama, Yoshihiro, Tsuguo Inata, Toshio Fujii, et al.. (1986). Conduction Band Edge Discontinuity of In_ Ga_ As/In_ (Ga_1 _xAl_x)_ As(0≦x≦1) Heterostructures. Japanese Journal of Applied Physics. 25(8). 2 indexed citations
16.
Ohnìshì, H., Tsuguo Inata, Shunichi Muto, Naoki Yokoyama, & A. Shibatomi. (1986). Self-consistent analysis of resonant tunneling current. Applied Physics Letters. 49(19). 1248–1250. 129 indexed citations
17.
Sugiyama, Yoshihiro, Tsuguo Inata, Toshio Fujii, et al.. (1986). Conduction Band Edge Discontinuity of In0.52Ga0.48As/In0.52(Ga1-xAlx)0.48As(0≦x≦1) Heterostructures. Japanese Journal of Applied Physics. 25(8A). L648–L648. 72 indexed citations
18.
Muto, Shunichi, Tsuguo Inata, H. Ohnìshì, Naoki Yokoyama, & S. Hiyamizu. (1986). Effect of Silicon Doping Profile on I–V Characteristics of an AlGaAs/GaAs Resonant Tunneling Barrier Structure Grown by MBE. Japanese Journal of Applied Physics. 25(7A). L577–L577. 73 indexed citations
19.
Nakamura, T., Satoshi Komiya, Tsuguo Inata, Shunichi Muto, & S. Hiyamizu. (1985). Effects of Se implantation on the compositional disordering of GaAs-AlAs superlattices. MRS Proceedings. 56. 3 indexed citations
20.
Inata, Tsuguo, et al.. (1984). The Effects of Tungsten-Halogen Lamp Annealing on a Selectively Doped GaAs/N-AlGaAs Heterostructure Grown by MBE. Japanese Journal of Applied Physics. 23(3A). L147–L147. 15 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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