Yoshihiro Sugiyama

3.5k total citations
93 papers, 2.8k citations indexed

About

Yoshihiro Sugiyama is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, Yoshihiro Sugiyama has authored 93 papers receiving a total of 2.8k indexed citations (citations by other indexed papers that have themselves been cited), including 76 papers in Electrical and Electronic Engineering, 53 papers in Atomic and Molecular Physics, and Optics and 27 papers in Materials Chemistry. Recurrent topics in Yoshihiro Sugiyama's work include Semiconductor Quantum Structures and Devices (47 papers), Semiconductor Lasers and Optical Devices (26 papers) and Advanced Semiconductor Detectors and Materials (19 papers). Yoshihiro Sugiyama is often cited by papers focused on Semiconductor Quantum Structures and Devices (47 papers), Semiconductor Lasers and Optical Devices (26 papers) and Advanced Semiconductor Detectors and Materials (19 papers). Yoshihiro Sugiyama collaborates with scholars based in Japan, China and United States. Yoshihiro Sugiyama's co-authors include Kentaro Kinoshita, Naoki Yokoyama, Yoshiaki Nakata, Shunichi Muto, Chikako Yoshida, Hideyuki Noshiro, M. Aoki, Yoshihiro Sato, Masaki Aoki and Toshio Fujii and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Yoshihiro Sugiyama

89 papers receiving 2.8k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Yoshihiro Sugiyama Japan 29 2.3k 1.2k 871 488 229 93 2.8k
J.A. Plaza Spain 24 1.2k 0.5× 744 0.6× 284 0.3× 46 0.1× 116 0.5× 156 2.1k
Yoshifumi Noguchi Japan 17 461 0.2× 267 0.2× 262 0.3× 111 0.2× 52 0.2× 81 935
David A. Routenberg United States 13 1.2k 0.5× 381 0.3× 393 0.5× 50 0.1× 71 0.3× 21 2.2k
Lianfeng Zhao United States 27 4.1k 1.8× 460 0.4× 2.8k 3.3× 959 2.0× 72 0.3× 59 4.4k
Stefan Schumacher Germany 26 680 0.3× 1.0k 0.9× 510 0.6× 243 0.5× 44 0.2× 121 2.1k
H. Kurebayashi Japan 27 818 0.4× 1.6k 1.4× 757 0.9× 51 0.1× 11 0.0× 98 2.6k
Dongmin Wu China 20 661 0.3× 241 0.2× 619 0.7× 52 0.1× 38 0.2× 65 1.7k
K. Chan United States 23 2.2k 0.9× 575 0.5× 1.1k 1.3× 84 0.2× 67 0.3× 91 2.7k
Jiahao Han China 18 550 0.2× 1.2k 1.0× 486 0.6× 23 0.0× 17 0.1× 65 1.7k
S. Maı̂trejean France 21 1.0k 0.4× 136 0.1× 1.2k 1.3× 90 0.2× 44 0.2× 100 1.9k

Countries citing papers authored by Yoshihiro Sugiyama

Since Specialization
Citations

This map shows the geographic impact of Yoshihiro Sugiyama's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yoshihiro Sugiyama with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yoshihiro Sugiyama more than expected).

Fields of papers citing papers by Yoshihiro Sugiyama

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yoshihiro Sugiyama. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yoshihiro Sugiyama. The network helps show where Yoshihiro Sugiyama may publish in the future.

Co-authorship network of co-authors of Yoshihiro Sugiyama

This figure shows the co-authorship network connecting the top 25 collaborators of Yoshihiro Sugiyama. A scholar is included among the top collaborators of Yoshihiro Sugiyama based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Yoshihiro Sugiyama. Yoshihiro Sugiyama is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Zhong, Zhiyong, Yoshihiro Sugiyama, & Hiroshi Ishiwara. (2010). Large Remanent Polarization in Sm-Substituted BiFeO3 Thin Film Formed by Chemical Solution Deposition. Japanese Journal of Applied Physics. 49(4R). 41502–41502. 10 indexed citations
2.
Kinoshita, Kentaro, et al.. (2008). Dominant Failure Mechanism in Data Retention Characteristics of Resistance Change Memory Consisting of NiO at High Temperature. Applied Physics Express. 1. 125001–125001. 6 indexed citations
3.
Kinoshita, Kentaro, K. Tsunoda, Yoshihiro Sato, et al.. (2007). Reduction of Reset Current in NiO-ReRAM Brought about by Ideal Current Limiter. 16 indexed citations
4.
Kinoshita, Kentaro, Tetsuro Tamura, Hideyuki Noshiro, et al.. (2006). New Model Proposed for Switching Mechanism of ReRAM. 84–85. 7 indexed citations
5.
6.
Endoh, Akira, Yoshihiro Nakata, Yoshihiro Sugiyama, Motomu Takatsu, & Naoki Yokoyama. (2002). An effect of size fluctuation on photoluminescence peak width of closely stacked InAs self-assembled quantum dot structures. 167–170. 3 indexed citations
7.
Sugiyama, Yoshihiro, et al.. (2001). Electronic structure ofSi1−yCyandSi1−x−yGexCyalloys with low C concentrations. Physical review. B, Condensed matter. 63(19). 2 indexed citations
8.
Muto, Shunichi, Y. Ebiko, Daisuke Suzuki, et al.. (1998). Volume distributions of InAs/GaAs self-assembled quantum dots by Stranski–Krastanow mode of molecular beam epitaxy. Materials Science in Semiconductor Processing. 1(2). 131–140. 4 indexed citations
9.
Shōji, H., Yoshihiro Nakata, Kohki Mukai, et al.. (1997). Lasing characteristics of self-formed quantum-dot lasers with multistacked dot layer. IEEE Journal of Selected Topics in Quantum Electronics. 3(2). 188–195. 45 indexed citations
10.
Awano, Yuji, Yoshiki Sakuma, Yoshihiro Sugiyama, et al.. (1996). InGaAs/GaAs Tetrahedral-Shaped Recess Quantum Dot (TSR-QD)Technology (Special Issue on Quantum Effect Devices and Their Fabrication Technologies). IEICE Transactions on Electronics. 79(11). 1557–1561. 1 indexed citations
11.
Shoji, Hajime, Yoshiaki Nakata, Kohki Mukai, et al.. (1996). Self-Formed InGaAs Quantum Dot Lasers with Multi-Stacked Dot Layer. Japanese Journal of Applied Physics. 35(7B). L903–L903. 40 indexed citations
12.
Shōji, H., Yoshihiro Nakata, Kohki Mukai, et al.. (1996). Room temperature CW operation at the ground stateof self-formed quantum dot lasers with multi-stacked dot layer. Electronics Letters. 32(21). 2023–2024. 72 indexed citations
13.
Kato, T., T. Suetake, Yoshihiro Sugiyama, Nobuko Tabata, & Hachiro Tagami. (1996). Epidemiology and prognosis of subungual melanoma in 34 Japanese patients. British Journal of Dermatology. 134(3). 383–387. 50 indexed citations
14.
Sugiyama, Yoshihiro, et al.. (1995). Novel InGaAs/GaAs Quantum Dot Structures Formed in Tetrahedral-Shaped Recesses on (111)B GaAs Substrate Using Metalorganic Vapor Phase Epitaxy. Japanese Journal of Applied Physics. 34(8S). 4384–4384. 13 indexed citations
15.
Kato, T., T. Suetake, Yoshihiro Sugiyama, et al.. (1993). Improvement in survival rate of patients with acral melanoma observed in the past 22 years in Sendai, Japan. Clinical and Experimental Dermatology. 18(2). 107–110. 29 indexed citations
16.
Tackeuchi, Atsushi, Yoshihiro Sugiyama, Tsuguo Inata, & Shunichi Muto. (1992). Differences in Tunneling Time between 77 K and Room Temperature for Tunneling Biquantum Wells. Japanese Journal of Applied Physics. 31(12R). 3823–3823. 7 indexed citations
17.
Nakata, Yoshiaki, Yoshihiro Sugiyama, Osamu Ueda, et al.. (1990). Characterization of GaAsSb/InAlAs quantum-well structures lattice-matched to InP grown by molecular beam epitaxy. Journal of Crystal Growth. 99(1-4). 311–314. 10 indexed citations
18.
Nakata, Yoshiaki, Shigehiko Sasa, Yoshihiro Sugiyama, Toshio Fujii, & S. Hiyamizu. (1987). Extremely High 2DEG Concentration in Selectively Doped In_ Ga_ As/N-In_ Al_ As Heterostructures Grown by MBE. Japanese Journal of Applied Physics. 26(1). 4 indexed citations
19.
Hiyamizu, S., Toshio Fujii, Shunichi Muto, et al.. (1987). MBE growth of InGaAs-InGaAlAs heterostructures for applications to high-speed devices. Journal of Crystal Growth. 81(1-4). 349–358. 26 indexed citations
20.
Sugiyama, Yoshihiro, Tsuguo Inata, Toshio Fujii, et al.. (1986). Conduction Band Edge Discontinuity of In_ Ga_ As/In_ (Ga_1 _xAl_x)_ As(0≦x≦1) Heterostructures. Japanese Journal of Applied Physics. 25(8). 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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