Daxin Han

1.5k total citations · 3 hit papers
19 papers, 1.3k citations indexed

About

Daxin Han is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Aerospace Engineering. According to data from OpenAlex, Daxin Han has authored 19 papers receiving a total of 1.3k indexed citations (citations by other indexed papers that have themselves been cited), including 11 papers in Electrical and Electronic Engineering, 6 papers in Electronic, Optical and Magnetic Materials and 5 papers in Aerospace Engineering. Recurrent topics in Daxin Han's work include Semiconductor materials and devices (8 papers), Radio Frequency Integrated Circuit Design (7 papers) and Electromagnetic wave absorption materials (6 papers). Daxin Han is often cited by papers focused on Semiconductor materials and devices (8 papers), Radio Frequency Integrated Circuit Design (7 papers) and Electromagnetic wave absorption materials (6 papers). Daxin Han collaborates with scholars based in Switzerland, China and Singapore. Daxin Han's co-authors include Gustav Nyström, Zhihui Zeng, Gilberto Siqueira, Tingting Wu, Qun Ren, Changxian Wang, Sina Abdolhosseinzadeh, Anja Huch, Frank Nüesch and Chuanfang Zhang and has published in prestigious journals such as Advanced Materials, ACS Nano and Journal of Materials Chemistry A.

In The Last Decade

Daxin Han

19 papers receiving 1.2k citations

Hit Papers

Nanocellulose‐MXene Biomimetic Aerogels with Orientation‐... 2020 2026 2022 2024 2020 2020 2020 100 200 300 400

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Daxin Han Switzerland 8 968 659 359 350 179 19 1.3k
Xiangyu Wang China 14 1.3k 1.3× 1.0k 1.5× 337 0.9× 138 0.4× 166 0.9× 44 1.6k
Gao Deng China 15 742 0.8× 446 0.7× 315 0.9× 416 1.2× 281 1.6× 25 1.3k
Kelan Yan China 15 872 0.9× 442 0.7× 321 0.9× 432 1.2× 159 0.9× 35 1.2k
Leilei Liang China 17 1.8k 1.8× 1.3k 1.9× 485 1.4× 214 0.6× 193 1.1× 22 2.1k
Ufuoma I. Kara United States 9 734 0.8× 510 0.8× 203 0.6× 133 0.4× 81 0.5× 12 960
Jiahui Li China 15 624 0.6× 323 0.5× 158 0.4× 293 0.8× 258 1.4× 27 886
Ruixuan Zhang China 20 2.2k 2.3× 1.7k 2.6× 552 1.5× 170 0.5× 186 1.0× 39 2.5k
Zhikai Yan China 14 1.1k 1.1× 687 1.0× 381 1.1× 250 0.7× 160 0.9× 26 1.4k
Yixuan Han China 11 423 0.4× 328 0.5× 176 0.5× 225 0.6× 112 0.6× 25 849

Countries citing papers authored by Daxin Han

Since Specialization
Citations

This map shows the geographic impact of Daxin Han's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Daxin Han with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Daxin Han more than expected).

Fields of papers citing papers by Daxin Han

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Daxin Han. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Daxin Han. The network helps show where Daxin Han may publish in the future.

Co-authorship network of co-authors of Daxin Han

This figure shows the co-authorship network connecting the top 25 collaborators of Daxin Han. A scholar is included among the top collaborators of Daxin Han based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Daxin Han. Daxin Han is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

19 of 19 papers shown
1.
Han, Daxin, et al.. (2022). InP/GaAsSb Double Heterojunction Bipolar Transistor Emitter-Fin Technology With f MAX = 1.2 THz. IEEE Transactions on Electron Devices. 69(4). 2122–2129. 27 indexed citations
2.
3.
Han, Daxin, et al.. (2022). High-Speed Steep-Slope GaInAs Impact Ionization MOSFETs (I-MOS) With SS = 1.25 mV/dec—Part II: Dynamic Switching and RF Performance. IEEE Transactions on Electron Devices. 69(7). 3549–3556. 3 indexed citations
5.
Han, Daxin, et al.. (2021). InP/GaAsSb Double Heterojunction Bipolar Transistor Technology with fMAX = 1.2 THz. 2021 IEEE International Electron Devices Meeting (IEDM). 11.4.1–11.4.4. 2 indexed citations
6.
Wu, Na, Zhihui Zeng, Nico Kummer, et al.. (2021). Ultrafine Cellulose Nanofiber‐Assisted Physical and Chemical Cross‐Linking of MXene Sheets for Electromagnetic Interference Shielding. Small Methods. 5(12). e2100889–e2100889. 103 indexed citations
7.
Zeng, Zhihui, Fuze Jiang, Yang Yue, et al.. (2020). Flexible and Ultrathin Waterproof Cellular Membranes Based on High‐Conjunction Metal‐Wrapped Polymer Nanofibers for Electromagnetic Interference Shielding. Advanced Materials. 32(19). e1908496–e1908496. 289 indexed citations breakdown →
8.
Zeng, Zhihui, Tingting Wu, Daxin Han, et al.. (2020). Ultralight, Flexible, and Biomimetic Nanocellulose/Silver Nanowire Aerogels for Electromagnetic Interference Shielding. ACS Nano. 14(3). 2927–2938. 311 indexed citations breakdown →
9.
Han, Daxin, et al.. (2020). Impact of Reduced Gate‐to‐Source Spacing on Indium Phosphide High Electron Mobility Transistor Performance. physica status solidi (a). 218(3). 4 indexed citations
10.
Zeng, Zhihui, Changxian Wang, Tingting Wu, et al.. (2020). Nanocellulose assisted preparation of ambient dried, large-scale and mechanically robust carbon nanotube foams for electromagnetic interference shielding. Journal of Materials Chemistry A. 8(35). 17969–17979. 79 indexed citations
11.
Zeng, Zhihui, Changxian Wang, Gilberto Siqueira, et al.. (2020). Nanocellulose‐MXene Biomimetic Aerogels with Orientation‐Tunable Electromagnetic Interference Shielding Performance. Advanced Science. 7(15). 2000979–2000979. 402 indexed citations breakdown →
12.
Han, Daxin, et al.. (2020). Low-Noise Microwave Performance of 30 nm GaInAs MOS-HEMTs: Comparison to Low-Noise HEMTs. IEEE Electron Device Letters. 41(9). 1320–1323. 7 indexed citations
13.
Han, Daxin, et al.. (2019). Effects of Electrochemical Etching on InP HEMT Fabrication. IEEE Transactions on Semiconductor Manufacturing. 32(4). 496–501. 6 indexed citations
14.
Han, Daxin, et al.. (2019). InAs Channel Inset Effects on the DC, RF, and Noise Properties of InP pHEMTs. IEEE Transactions on Electron Devices. 66(11). 4685–4691. 14 indexed citations
15.
Han, Daxin, et al.. (2019). New GaInAs/InAs/InP Composite Channels for mm-Wave Low-Noise InP HEMTs. 1–4. 2 indexed citations
16.
Han, Daxin, et al.. (2019). Impact Ionization Control in 50 nm Low-Noise High-Speed InP HEMTs with InAs Channel Insets. 9.3.1–9.3.4. 12 indexed citations
17.
Zhu, Wenjun, Jing Ren, Zichen Wang, et al.. (2015). Synthesis of “brain-like” hierarchical porous microspheres by emulsion-solvent evaporation. Materials Letters. 155. 130–133. 4 indexed citations
18.
Yang, Hui, Yuan Xie, Daxin Han, et al.. (2015). A facile route to synthesize porous ethyl cellulose spheres loaded with superparamagnetic iron oxide nanoparticles. Colloid & Polymer Science. 293(7). 1915–1922. 4 indexed citations
19.
Cai, Weiwei, Hui Yang, Daxin Han, & Xingzhong Guo. (2014). A physical route to porous ethyl cellulose microspheres loaded with TiO2 nanoparticles. Journal of Applied Polymer Science. 131(19). 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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