D.H. Zhang

485 total citations
43 papers, 377 citations indexed

About

D.H. Zhang is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, D.H. Zhang has authored 43 papers receiving a total of 377 indexed citations (citations by other indexed papers that have themselves been cited), including 41 papers in Electrical and Electronic Engineering, 29 papers in Atomic and Molecular Physics, and Optics and 13 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in D.H. Zhang's work include Semiconductor Quantum Structures and Devices (27 papers), Semiconductor materials and devices (22 papers) and Copper Interconnects and Reliability (13 papers). D.H. Zhang is often cited by papers focused on Semiconductor Quantum Structures and Devices (27 papers), Semiconductor materials and devices (22 papers) and Copper Interconnects and Reliability (13 papers). D.H. Zhang collaborates with scholars based in Singapore, China and France. D.H. Zhang's co-authors include C.Y. Li, K. Radhakrishnan, Soon Fatt Yoon, Yongsheng Gao, Jun Wei, Cher Ming Tan, K. Prasad, Andrew T. S. Wee, P.D. Foo and Liping Yang and has published in prestigious journals such as Journal of Alloys and Compounds, Thin Solid Films and Journal of materials research/Pratt's guide to venture capital sources.

In The Last Decade

D.H. Zhang

40 papers receiving 367 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
D.H. Zhang Singapore 11 295 163 144 113 112 43 377
M. S. Ameen United States 10 199 0.7× 77 0.5× 61 0.4× 181 1.6× 52 0.5× 31 331
Véronique Soulière France 11 312 1.1× 153 0.9× 68 0.5× 122 1.1× 27 0.2× 74 388
Andrew S. Alimonda United States 8 404 1.4× 81 0.5× 30 0.2× 189 1.7× 104 0.9× 12 459
Naotaka Kuroda Japan 11 308 1.0× 151 0.9× 73 0.5× 82 0.7× 39 0.3× 31 422
L. C. Hsia United States 11 270 0.9× 88 0.5× 85 0.6× 54 0.5× 56 0.5× 39 328
R. Bisaro France 9 268 0.9× 95 0.6× 41 0.3× 222 2.0× 36 0.3× 27 366
C. H. Carter United States 12 465 1.6× 218 1.3× 97 0.7× 85 0.8× 37 0.3× 15 574
U. Mackens Germany 11 257 0.9× 209 1.3× 38 0.3× 133 1.2× 20 0.2× 28 414
J. Mittereder United States 16 499 1.7× 241 1.5× 158 1.1× 141 1.2× 85 0.8× 42 654
Tomio Izumi Japan 13 323 1.1× 129 0.8× 27 0.2× 317 2.8× 54 0.5× 43 450

Countries citing papers authored by D.H. Zhang

Since Specialization
Citations

This map shows the geographic impact of D.H. Zhang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D.H. Zhang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D.H. Zhang more than expected).

Fields of papers citing papers by D.H. Zhang

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D.H. Zhang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D.H. Zhang. The network helps show where D.H. Zhang may publish in the future.

Co-authorship network of co-authors of D.H. Zhang

This figure shows the co-authorship network connecting the top 25 collaborators of D.H. Zhang. A scholar is included among the top collaborators of D.H. Zhang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D.H. Zhang. D.H. Zhang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Jin, Yuhao, et al.. (2020). Hetero-epitaxial growth and mechanism of one-dimensional InSb nanostructures on GaAs substrate by MOCVD. Journal of Alloys and Compounds. 823. 153758–153758. 5 indexed citations
2.
Jin, Yuhao, et al.. (2016). Self-nucleation growth of InSb nanowires based on indium droplets under the assistance of Au nano-particles by MOCVD. Materials Letters. 185. 77–80. 7 indexed citations
3.
Jin, Yuanjun, et al.. (2015). Optical properties and bonding behaviors of InSbN alloys grown by metal-organic chemical vapor deposition. Journal of Crystal Growth. 416. 12–16. 10 indexed citations
4.
Lu, Fangfang, et al.. (2007). Band structure investigation of strained Si1-xGex/Si coupled quantum wells. International Journal of Nanotechnology. 4(4). 431–431. 1 indexed citations
5.
Fan, W. J., et al.. (2007). Investigation of Intersubband Transition in GaAs/AlGaAs Quantum Well Infrared Photodetectors. Advanced materials research. 31. 105–107.
6.
7.
Li, Haiyan, Ting Mei, D.H. Zhang, et al.. (2006). Infrared absorption and current–voltage characteristic of GaAs/AlGaAs multiple quantum wells on GaAs (111)A substrate grown by solid source molecular beam epitaxy. Journal of Crystal Growth. 288(1). 36–39. 1 indexed citations
8.
Mei, Ting, Haiyan Li, Gamani Karunasiri, et al.. (2006). Normal incidence silicon doped p-type GaAs/AlGaAs quantum-well infrared photodetector on (111)A substrate. Infrared Physics & Technology. 50(2-3). 119–123. 6 indexed citations
9.
Fan, W. J., Soon Fatt Yoon, D.H. Zhang, et al.. (2006). 1.31 μm GaAs-based heterojunction p–i–n photodetectors using InGaAsNSb as the intrinsic layer grown by molecular beam epitaxy. Thin Solid Films. 515(10). 4441–4444. 1 indexed citations
10.
Zhang, D.H., et al.. (2005). Ta/SiCN bilayer barrier for Cu–ultra low k integration. Thin Solid Films. 504(1-2). 235–238. 12 indexed citations
11.
Fan, W. J., Soon Fatt Yoon, D.H. Zhang, et al.. (2005). GaAs-based heterojunction p-i-n photodetectors using pentanary InGaAsNSb as the intrinsic layer. IEEE Photonics Technology Letters. 17(9). 1932–1934. 14 indexed citations
12.
Zhang, D.H., Ping Lu, S. S. Su, et al.. (2004). Metal–organic chemical vapor deposited copper interconnects for deep submicron integrated circuits. Thin Solid Films. 471(1-2). 270–272. 5 indexed citations
13.
Li, C.Y., D.H. Zhang, S. S. Su, et al.. (2004). Comparative study of argon and hydrogen/helium plasma treatments on the properties of Cu/SiLK damascene structures for interconnect technology. Thin Solid Films. 462-463. 172–175. 2 indexed citations
14.
Sun, Lu, D.H. Zhang, Haitao Zheng, Soon Fatt Yoon, & C. H. Kam. (2001). High-resolution X-ray diffraction study of strained InGaAsP/InP multiple quantum well structures grown using all solid sources. Materials Science in Semiconductor Processing. 4(6). 631–636. 3 indexed citations
15.
Zhang, D.H., et al.. (1998). Carbon incorporation in GaAs/Al0.2Ga0.8As triple quantum wells and its effect on laser performance. Superlattices and Microstructures. 24(2). 119–125. 1 indexed citations
16.
17.
Li, C.Y. & D.H. Zhang. (1996). Effects of As cell temperature on oval defect density and C acceptor concentration of light Si-doped GaAs grown by molecular beam epitaxy. Journal of Crystal Growth. 165(1-2). 15–18. 1 indexed citations
18.
Yoon, Soon Fatt, et al.. (1993). The effect of growth interruption on the photoluminescence linewidth of GaAs/InGaAs quantum wells grown by molecular beam epitaxy. Journal of Crystal Growth. 131(1-2). 1–4. 3 indexed citations
19.
Yoon, Soon Fatt, et al.. (1993). The effect of interruption during the growth of strained GaAs/InGaAs/GaAs quantum wells by molecular beam epitaxy. Journal of materials research/Pratt's guide to venture capital sources. 8(12). 3122–3125. 3 indexed citations
20.
Yoon, Soon Fatt, et al.. (1993). Photoluminescence from strained GaAs/In0.12Ga0.88As multiple quantum-wells grown with and without growth interruption by molecular beam epitaxy. Superlattices and Microstructures. 13(4). 469–469. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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