Carl W. Chang

464 total citations
25 papers, 402 citations indexed

About

Carl W. Chang is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Condensed Matter Physics. According to data from OpenAlex, Carl W. Chang has authored 25 papers receiving a total of 402 indexed citations (citations by other indexed papers that have themselves been cited), including 24 papers in Electrical and Electronic Engineering, 3 papers in Materials Chemistry and 2 papers in Condensed Matter Physics. Recurrent topics in Carl W. Chang's work include Silicon Carbide Semiconductor Technologies (23 papers), Electromagnetic Compatibility and Noise Suppression (7 papers) and Semiconductor materials and devices (7 papers). Carl W. Chang is often cited by papers focused on Silicon Carbide Semiconductor Technologies (23 papers), Electromagnetic Compatibility and Noise Suppression (7 papers) and Semiconductor materials and devices (7 papers). Carl W. Chang collaborates with scholars based in United States. Carl W. Chang's co-authors include David J. Spry, Glenn M. Beheim, Philip G. Neudeck, Liang-Yü Chen, Michael J. Krasowski, Norman F. Prokop, Dorothy Lukco, Robert S. Okojie, Laura J. Evans and Roger D. Meredith and has published in prestigious journals such as IEEE Electron Device Letters, Journal of Microelectromechanical Systems and Materials science forum.

In The Last Decade

Carl W. Chang

25 papers receiving 380 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Carl W. Chang United States 12 358 65 54 40 31 25 402
Roger D. Meredith United States 10 298 0.8× 70 1.1× 33 0.6× 60 1.5× 33 1.1× 27 384
Young‐Pyo Hong South Korea 13 358 1.0× 66 1.0× 45 0.8× 44 1.1× 41 1.3× 70 459
Dong Yun Jung South Korea 10 288 0.8× 59 0.9× 26 0.5× 49 1.2× 52 1.7× 53 346
A. Deleniv Sweden 10 294 0.8× 105 1.6× 43 0.8× 106 2.6× 36 1.2× 54 340
Chengzhan Li China 12 399 1.1× 38 0.6× 60 1.1× 22 0.6× 72 2.3× 71 490
Ashok Raman United States 15 679 1.9× 49 0.8× 40 0.7× 23 0.6× 39 1.3× 42 721
Kazuo Shiraishi Japan 13 336 0.9× 47 0.7× 153 2.8× 85 2.1× 31 1.0× 29 400
Nebojša Janković Serbia 10 358 1.0× 59 0.9× 69 1.3× 31 0.8× 20 0.6× 58 389
Kyu‐Pyung Hwang United States 9 297 0.8× 19 0.3× 137 2.5× 37 0.9× 39 1.3× 18 340
Paweł Bajurko Poland 10 233 0.7× 84 1.3× 32 0.6× 77 1.9× 93 3.0× 41 347

Countries citing papers authored by Carl W. Chang

Since Specialization
Citations

This map shows the geographic impact of Carl W. Chang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Carl W. Chang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Carl W. Chang more than expected).

Fields of papers citing papers by Carl W. Chang

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Carl W. Chang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Carl W. Chang. The network helps show where Carl W. Chang may publish in the future.

Co-authorship network of co-authors of Carl W. Chang

This figure shows the co-authorship network connecting the top 25 collaborators of Carl W. Chang. A scholar is included among the top collaborators of Carl W. Chang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Carl W. Chang. Carl W. Chang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Spry, David J., et al.. (2023). Optimization of TaSi<sub>2</sub> Processing for 500 °C Durable SiC JFET-R Integrated Circuits. Key engineering materials. 948. 83–88. 3 indexed citations
2.
Neudeck, Philip G., David J. Spry, Michael J. Krasowski, et al.. (2023). Recent Progress in Extreme Environment Durable SiC JFET-R Integrated Circuit Technology. IMAPSource Proceedings. 2023(HiTEC, CICMT, Power). 5 indexed citations
3.
Neudeck, Philip G., David J. Spry, Michael J. Krasowski, et al.. (2021). Upscaling of 500 °C Durable SiC JFET-R Integrated Circuits. Additional Conferences (Device Packaging HiTEC HiTEN & CICMT). 2021(HiTEC). 64–68. 7 indexed citations
4.
Okojie, Robert S., Dorothy Lukco, Carl W. Chang, & Ender Savrun. (2019). Characterization of Silicon Carbide Pressure Sensors at 800 °C. 2080–2083. 4 indexed citations
5.
Spry, David J., Philip G. Neudeck, Dorothy Lukco, et al.. (2018). Prolonged 500°C Operation of 100+ Transistor Silicon Carbide Integrated Circuits. Materials science forum. 924. 949–952. 16 indexed citations
6.
Neudeck, Philip G., David J. Spry, Michael J. Krasowski, et al.. (2018). Yearlong 500 °C Operational Demonstration of Up-scaled 4H-SiC JFET Integrated Circuits. Additional Conferences (Device Packaging HiTEC HiTEN & CICMT). 2018(HiTEC). 71–78. 7 indexed citations
7.
Okojie, Robert S., et al.. (2018). In-Line Electromagnetic Actuator for Fuel Modulation. 2018 Joint Propulsion Conference. 1 indexed citations
8.
Neudeck, Philip G., et al.. (2017). Experimentally Observed Electrical Durability of 4H-SiC JFET ICs Operating from 500 °C to 700 °C. Materials science forum. 897. 567–570. 9 indexed citations
9.
Spry, David J., Philip G. Neudeck, Liangyu Chen, et al.. (2016). Processing and Prolonged 500 °C Testing of 4H-SiC JFET Integrated Circuits with Two Levels of Metal Interconnect. Materials science forum. 858. 908–912. 21 indexed citations
10.
Spry, David J., et al.. (2016). Experimental Durability Testing of 4H SiC JFET Integrated Circuit Technology at 727 C. NASA Technical Reports Server (NASA). 2 indexed citations
11.
Spry, David J., Philip G. Neudeck, Liangyu Chen, et al.. (2016). Evidence of Processing Non-Idealities in 4H-SiC Integrated Circuits Fabricated with Two Levels of Metal Interconnect. Materials science forum. 858. 1112–1116. 6 indexed citations
12.
Spry, David J., et al.. (2016). Experimental Durability Testing of 4H SiC JFET Integrated Circuit Technology at 727 °C. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 9836. 98360N–98360N. 11 indexed citations
13.
Spry, David J., Philip G. Neudeck, Liang-Yü Chen, et al.. (2016). Processing and Characterization of Thousand-Hour 500 °C Durable 4H-SiC JFET Integrated Circuits. Additional Conferences (Device Packaging HiTEC HiTEN & CICMT). 2016(HiTEC). 249–256. 23 indexed citations
14.
Spry, David J., Philip G. Neudeck, Liang-Yü Chen, et al.. (2016). Prolonged 500 °C Demonstration of 4H-SiC JFET ICs With Two-Level Interconnect. IEEE Electron Device Letters. 37(5). 625–628. 52 indexed citations
15.
Spry, David J., et al.. (2015). 4H-SiC JFET Multilayer Integrated Circuit Technologies Tested up to 1000 K. ECS Meeting Abstracts. MA2015-02(30). 1133–1133. 1 indexed citations
16.
Neudeck, Philip G., Liangyu Chen, David J. Spry, Glenn M. Beheim, & Carl W. Chang. (2015). Electrical Characterization of a 4H-SiC JFET Wafer: DC Parameter Variations for Extreme Temperature IC Design. Materials science forum. 821-823. 781–784. 2 indexed citations
17.
Spry, David J., et al.. (2015). 4H-SiC JFET Multilayer Integrated Circuit Technologies Tested up to 1000 K. ECS Transactions. 69(11). 113–121. 11 indexed citations
18.
Okojie, Robert S., Carl W. Chang, & Laura J. Evans. (2011). Reducing DRIE-Induced Trench Effects in SiC Pressure Sensors Using FEA Prediction. Journal of Microelectromechanical Systems. 20(5). 1174–1183. 11 indexed citations
19.
Neudeck, Philip G., David J. Spry, Liangyu Chen, et al.. (2009). Prolonged 500 °C Operation of 6H-SiC JFET Integrated Circuitry. Materials science forum. 615-617. 929–932. 13 indexed citations
20.
Neudeck, Philip G., David J. Spry, Liang-Yü Chen, et al.. (2008). Long-Term Characterization of 6H-SiC Transistor Integrated Circuit Technology Operating at 500 °C. MRS Proceedings. 1069. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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2026