V. Soncini

508 total citations
25 papers, 399 citations indexed

About

V. Soncini is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Computational Mechanics. According to data from OpenAlex, V. Soncini has authored 25 papers receiving a total of 399 indexed citations (citations by other indexed papers that have themselves been cited), including 23 papers in Electrical and Electronic Engineering, 12 papers in Materials Chemistry and 10 papers in Computational Mechanics. Recurrent topics in V. Soncini's work include Semiconductor materials and devices (14 papers), Integrated Circuits and Semiconductor Failure Analysis (13 papers) and Silicon and Solar Cell Technologies (11 papers). V. Soncini is often cited by papers focused on Semiconductor materials and devices (14 papers), Integrated Circuits and Semiconductor Failure Analysis (13 papers) and Silicon and Solar Cell Technologies (11 papers). V. Soncini collaborates with scholars based in Italy, Greece and France. V. Soncini's co-authors include D. Tsoukalas, P. Normand, A. Claverie, E. Kapetanakis, Panagiotis Dimitrakis, S. Solmi, D. Giubertoni, M. Bersani, Caroline Bonafos and Aditya Agarwal and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Thin Solid Films.

In The Last Decade

V. Soncini

23 papers receiving 391 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
V. Soncini Italy 10 364 244 118 96 73 25 399
X. Hebras France 8 326 0.9× 80 0.3× 159 1.3× 97 1.0× 31 0.4× 12 358
S. Corcoran United States 10 376 1.0× 92 0.4× 101 0.9× 108 1.1× 82 1.1× 24 410
M. J. J. Theunissen Netherlands 8 270 0.7× 157 0.6× 71 0.6× 54 0.6× 126 1.7× 25 328
O. V. Feklisova Russia 11 372 1.0× 123 0.5× 218 1.8× 70 0.7× 18 0.2× 54 398
S. Hamma France 12 464 1.3× 453 1.9× 52 0.4× 31 0.3× 59 0.8× 16 499
Masanori Otobe Japan 12 373 1.0× 421 1.7× 82 0.7× 27 0.3× 233 3.2× 15 481
M. Schwartzkopff Germany 7 249 0.7× 330 1.4× 128 1.1× 21 0.2× 263 3.6× 18 406
Kazuyuki Ikuta Japan 11 320 0.9× 255 1.0× 50 0.4× 35 0.4× 55 0.8× 19 357
В. А. Бурдов Russia 12 242 0.7× 458 1.9× 205 1.7× 52 0.5× 245 3.4× 62 536
I. Lagnado United States 11 403 1.1× 60 0.2× 87 0.7× 41 0.4× 61 0.8× 32 424

Countries citing papers authored by V. Soncini

Since Specialization
Citations

This map shows the geographic impact of V. Soncini's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by V. Soncini with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites V. Soncini more than expected).

Fields of papers citing papers by V. Soncini

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by V. Soncini. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by V. Soncini. The network helps show where V. Soncini may publish in the future.

Co-authorship network of co-authors of V. Soncini

This figure shows the co-authorship network connecting the top 25 collaborators of V. Soncini. A scholar is included among the top collaborators of V. Soncini based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with V. Soncini. V. Soncini is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Grasso, Salvatore, et al.. (2016). ToF‐SIMS depth profiles on Argon‐implanted amorphous carbon. Damage effect and hydrogen characterization. Surface and Interface Analysis. 48(7). 428–431. 4 indexed citations
2.
Polignano, M. L., et al.. (2014). Extended defect generation by Xenon implantation in silicon. AIP conference proceedings. 64–68. 1 indexed citations
3.
Soncini, V., et al.. (2014). Optimization of laser anneal conditions for implanted shallow p/n-junctions. Microelectronic Engineering. 125. 51–57. 1 indexed citations
4.
Soncini, V., et al.. (2012). SiO2 etch rate modification by ion implantation. Thin Solid Films. 524. 75–80. 3 indexed citations
5.
Polignano, M. L., et al.. (2012). Defect generation by argon implantation: microscopy characterization and electrical properties. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 9(10-11). 2005–2008. 1 indexed citations
6.
Polignano, M. L., et al.. (2007). Molybdenum Contamination in Indium and Boron Implantation Processes. ECS Transactions. 10(1). 85–94. 6 indexed citations
7.
Soncini, V., et al.. (2006). PLAsma Doping For P+ Junction Formation In 90 nm NOR Flash Memory Technology. AIP conference proceedings. 866. 225–228.
8.
Dimitrakis, Panagiotis, E. Kapetanakis, D. Tsoukalas, et al.. (2004). Silicon nanocrystal memory devices obtained by ultra-low-energy ion-beam synthesis. Solid-State Electronics. 48(9). 1511–1517. 50 indexed citations
9.
Brambilla, Massimo, Monica Martinelli, G. Pavia, et al.. (2003). Defect generation and suppression in device processes using a shallow trench isolation scheme. BOA (University of Milano-Bicocca). 6. 477–488. 1 indexed citations
10.
Perego, Michele, S. Ferrari, Sabina Spiga, et al.. (2003). Time of flight secondary ion mass spectrometry study of silicon nanoclusters embedded in thin silicon oxide layers. Applied Physics Letters. 82(1). 121–123. 24 indexed citations
11.
Polignano, M. L., A. Armigliato, R. Balboni, et al.. (2003). Dislocation Generation in Device Fabrication Process. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 95-96. 439–446. 5 indexed citations
12.
Normand, P., E. Kapetanakis, Panagiotis Dimitrakis, et al.. (2003). Effects of annealing conditions on charge storage of Si nanocrystal memory devices obtained by low-energy ion beam synthesis. Microelectronic Engineering. 67-68. 629–634. 9 indexed citations
13.
Carrada, M., Caroline Bonafos, Gérard Assayag, et al.. (2003). Effect of ion energy and dose on the positioning of 2D-arrays of Si nanocrystals ion beam synthesized in thin SiO2 layers. Physica E Low-dimensional Systems and Nanostructures. 17. 513–515. 10 indexed citations
14.
Polignano, M. L., et al.. (2003). Metal contamination reduction in the evolution of ion implantation technology. 686–690. 3 indexed citations
15.
Dimitrakis, Panagiotis, E. Kapetanakis, P. Normand, et al.. (2003). MOS memory structures by very-low-energy-implanted Si in thin SiO2. Materials Science and Engineering B. 101(1-3). 14–18. 32 indexed citations
16.
Normand, P., E. Kapetanakis, Panagiotis Dimitrakis, et al.. (2003). Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 216. 228–238. 35 indexed citations
17.
Normand, P., E. Kapetanakis, Panagiotis Dimitrakis, et al.. (2003). Effect of annealing environment on the memory properties of thin oxides with embedded Si nanocrystals obtained by low-energy ion-beam synthesis. Applied Physics Letters. 83(1). 168–170. 83 indexed citations
18.
Solmi, S., A. Parisini, M. Bersani, et al.. (2002). Investigation on indium diffusion in silicon. Journal of Applied Physics. 92(3). 1361–1366. 40 indexed citations
19.
Assayag, Gérard, M. Carrada, Caroline Bonafos, et al.. (2002). Depth positioning of silicon nanoparticles created by Si ULE implants in ultrathin SiO<sub>2</sub>. DSpace - NTUA (National Technical University of Athens). 88. 645–648. 1 indexed citations
20.
Bianconi, M., et al.. (1992). Laser deposition of YBaCuO single-crystal thin films on different substrates. Materials Science and Engineering B. 13(1). 21–24. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by X. Hebras Breakdown of academic impact, for papers by S. Corcoran Breakdown of academic impact, for papers by M. J. J. Theunissen Breakdown of academic impact, for papers by O. V. Feklisova Breakdown of academic impact, for papers by S. Hamma Breakdown of academic impact, for papers by Masanori Otobe Breakdown of academic impact, for papers by M. Schwartzkopff Breakdown of academic impact, for papers by Kazuyuki Ikuta Breakdown of academic impact, for papers by В. А. Бурдов Breakdown of academic impact, for papers by I. Lagnado
Rankless by CCL
2026