D. M. Scott

414 total citations
25 papers, 335 citations indexed

About

D. M. Scott is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Mechanical Engineering. According to data from OpenAlex, D. M. Scott has authored 25 papers receiving a total of 335 indexed citations (citations by other indexed papers that have themselves been cited), including 21 papers in Atomic and Molecular Physics, and Optics, 19 papers in Electrical and Electronic Engineering and 7 papers in Mechanical Engineering. Recurrent topics in D. M. Scott's work include Semiconductor materials and interfaces (21 papers), Silicon and Solar Cell Technologies (10 papers) and Semiconductor materials and devices (9 papers). D. M. Scott is often cited by papers focused on Semiconductor materials and interfaces (21 papers), Silicon and Solar Cell Technologies (10 papers) and Semiconductor materials and devices (9 papers). D. M. Scott collaborates with scholars based in United States and Finland. D. M. Scott's co-authors include M.−A. Nicolet, S. S. Lau, C. S. Pai, E. D. Marshall, L.S. Wieluński, J. W. Mayer, F. J. Grunthaner, P. J. Grunthaner, B.M. Paine and Wei Chen and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

D. M. Scott

23 papers receiving 313 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
D. M. Scott United States	11	262	226	83	62	48	25	335
H. Kräutle Germany	8	242 0.9×	226 1.0×	99 1.2×	96 1.5×	67 1.4×	14	353
L. R. Zheng United States	11	307 1.2×	264 1.2×	94 1.1×	96 1.5×	45 0.9×	29	395
R.M. Ware United Kingdom	11	275 1.0×	252 1.1×	138 1.7×	50 0.8×	20 0.4×	19	399
Shigetoshi Takayanagi Japan	12	185 0.7×	389 1.7×	232 2.8×	40 0.6×	44 0.9×	31	474
H. G. Robinson United States	13	180 0.7×	321 1.4×	47 0.6×	32 0.5×	75 1.6×	34	356
A. Grob France	13	147 0.6×	333 1.5×	124 1.5×	35 0.6×	169 3.5×	42	421
C.‐D. Lien United States	12	485 1.9×	390 1.7×	135 1.6×	150 2.4×	50 1.0×	20	568
G. Göltz France	8	148 0.6×	236 1.0×	151 1.8×	83 1.3×	69 1.4×	17	350
C. Schwarz Switzerland	10	342 1.3×	156 0.7×	82 1.0×	40 0.6×	25 0.5×	15	401
T. R. Cass United States	11	163 0.6×	301 1.3×	121 1.5×	35 0.6×	39 0.8×	20	365

Countries citing papers authored by D. M. Scott

Since Specialization

Citations

This map shows the geographic impact of D. M. Scott's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. M. Scott with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. M. Scott more than expected).

Fields of papers citing papers by D. M. Scott

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. M. Scott. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. M. Scott. The network helps show where D. M. Scott may publish in the future.

Co-authorship network of co-authors of D. M. Scott

This figure shows the co-authorship network connecting the top 25 collaborators of D. M. Scott. A scholar is included among the top collaborators of D. M. Scott based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D. M. Scott. D. M. Scott is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Scott, D. M., et al.. (2017). Manipulating the optical properties of dual implanted Au and Zn nanoparticles in sapphire. Photonics and Nanostructures - Fundamentals and Applications. 27. 17–23. 11 indexed citations

Marshall, E. D., et al.. (1985). Metal-Germanium Contacts and Germanide Formation. MRS Proceedings. 47. 58 indexed citations

Nicolet, M.‐A., et al.. (1985). Effects of ion-implanted nitrogen impurities on molybdenum silicide formation. Thin Solid Films. 127(1-2). 171–179. 3 indexed citations

Scott, D. M., et al.. (1985). The Effects of Ion Beam Etching on Si, Ge, GaAs , and InP Schottky Barrier Diodes. Journal of The Electrochemical Society. 132(4). 918–922. 16 indexed citations

HEWETT, CHARLES A., D. M. Scott, S. S. Lau, & M. Bartur. (1984). Oxidation of Au/Si Films For Self-Confined Interconnects. MRS Proceedings. 40.

Scott, D. M., C. S. Pai, & S. S. Lau. (1984). Thin Film Reaction Investigation By Backscattering Spectroscopy - W Marker Study Of Pd 2 Ge Formation. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 463. 40–40. 2 indexed citations

Scott, D. M. & B.M. Paine. (1983). Accelerator energy calibration using nonresonant nuclear reactions. Nuclear Instruments and Methods in Physics Research. 218(1-3). 154–158. 14 indexed citations

Scott, D. M. & M.−A. Nicolet. (1983). The effects of implanted oxygen on Pd2Si formation. Nuclear Instruments and Methods in Physics Research. 209-210. 297–301. 7 indexed citations

Banwell, T.C., M.−A. Nicolet, & D. M. Scott. (1983). Thermal stability and electrical resistivity of 14N-implanted nickel contacts on n+-Si. Thin Solid Films. 107(1). 67–71. 6 indexed citations

10.

Marshall, E. D., et al.. (1983). Pt and Pd Silicides and Pd Germanide as Contact Metallizations for GaAs. MRS Proceedings. 25. 5 indexed citations

11.

Scott, D. M., S.S. Lau, Robert Pfeffer, et al.. (1983). The Effects of Interfacial SiO2 on Pd2Si Formation. Thin Solid Films. 104(1-2). 227–233. 27 indexed citations

12.

HEWETT, CHARLES A., I. Suni, S. S. Lau, L. S. Hung, & D. M. Scott. (1983). Amorphous Phase Formation and Recrystallization in Ion-Implanted Silicides. MRS Proceedings. 27. 7 indexed citations

13.

Tseng, W. F., et al.. (1983). Characterization of tantalum-silicon films on GaAs at elevated temperatures. IEEE Electron Device Letters. 4(7). 207–209. 21 indexed citations

14.

Lien, C.‐D., et al.. (1983). Effect of Nitrogen and Oxygen Impurities on Tantalum Silicide Formation. MRS Proceedings. 25. 2 indexed citations

15.

Scott, D. M., et al.. (1982). The Effects of Interfacial SiO₂ on Pd₂Si Formation. MRS Proceedings. 18.

16.

Scott, D. M., et al.. (1981). Retardation and suppression of nickel silicide formation by N+ implantation. Nuclear Instruments and Methods. 182-183. 661–666. 13 indexed citations

17.

Scott, D. M. & M.−A. Nicolet. (1981). Modification of nickel silicide formation by oxygen implantation. Nuclear Instruments and Methods. 182-183. 655–660. 41 indexed citations

18.

Wieluński, L.S., et al.. (1981). Alteration of Ni silicide formation by N implantation. Applied Physics Letters. 38(2). 106–108. 16 indexed citations

19.

Grunthaner, P. J., F. J. Grunthaner, D. M. Scott, M.−A. Nicolet, & J. W. Mayer. (1981). Oxygen impurity effects at metal/silicide interfaces: Formation of silicon oxide and suboxides in the Ni/Si system. Journal of Vacuum Science and Technology. 19(3). 641–648. 42 indexed citations

20.

Scott, D. M. & M.−A. Nicolet. (1981). Implanted oxygen in NiSi formation. physica status solidi (a). 66(2). 773–778. 22 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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