H. G. Robinson

442 total citations
34 papers, 356 citations indexed

About

H. G. Robinson is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Computational Mechanics. According to data from OpenAlex, H. G. Robinson has authored 34 papers receiving a total of 356 indexed citations (citations by other indexed papers that have themselves been cited), including 29 papers in Electrical and Electronic Engineering, 21 papers in Atomic and Molecular Physics, and Optics and 9 papers in Computational Mechanics. Recurrent topics in H. G. Robinson's work include Semiconductor materials and interfaces (17 papers), Silicon and Solar Cell Technologies (17 papers) and Advanced Semiconductor Detectors and Materials (14 papers). H. G. Robinson is often cited by papers focused on Semiconductor materials and interfaces (17 papers), Silicon and Solar Cell Technologies (17 papers) and Advanced Semiconductor Detectors and Materials (14 papers). H. G. Robinson collaborates with scholars based in United States, Paraguay and United Kingdom. H. G. Robinson's co-authors include Michael Deal, C. R. Helms, K. S. Jones, D. A. Stevenson, David A. Stevenson, J.D. Plummer, Emily Allen, G.A.J. Amaratunga, Peter B. Griffin and Mark E. Law and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

H. G. Robinson

33 papers receiving 349 citations

Author Peers

Peers are selected by citation overlap in the author's most active subfields. citations · hero ref

Author						Papers	Cites
H. G. Robinson	321	180	75	48	47	34	356
K. Kyllesbech Larsen	242 0.8×	159 0.9×	91 1.2×	17 0.4×	125 2.7×	35	381
H. Kräutle	226 0.7×	242 1.3×	67 0.9×	13 0.3×	99 2.1×	14	353
Elisa García‐Tabarés	266 0.8×	135 0.8×	41 0.5×	24 0.5×	93 2.0×	33	387
G. E. Crook	271 0.8×	234 1.3×	17 0.2×	108 2.3×	107 2.3×	28	441
G. Regula	344 1.1×	105 0.6×	24 0.3×	38 0.8×	181 3.9×	58	438
M. Duseaux	185 0.6×	176 1.0×	42 0.6×	12 0.3×	162 3.4×	12	341
H. P. Vyas	287 0.9×	140 0.8×	15 0.2×	22 0.5×	67 1.4×	48	354
S.J. Jeng	571 1.8×	157 0.9×	52 0.7×	8 0.2×	132 2.8×	35	636
N.B. Koster	183 0.6×	101 0.6×	68 0.9×	17 0.4×	83 1.8×	38	316
R. T. Fulks	378 1.2×	205 1.1×	52 0.7×	10 0.2×	154 3.3×	27	447

Countries citing papers authored by H. G. Robinson

Since Specialization

Citations

This map shows the geographic impact of H. G. Robinson's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. G. Robinson with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. G. Robinson more than expected).

Fields of papers citing papers by H. G. Robinson

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. G. Robinson. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. G. Robinson. The network helps show where H. G. Robinson may publish in the future.

Co-authorship network of co-authors of H. G. Robinson

This figure shows the co-authorship network connecting the top 25 collaborators of H. G. Robinson. A scholar is included among the top collaborators of H. G. Robinson based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H. G. Robinson. H. G. Robinson is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Deal, Michael, et al.. (2003). Modeling p-types dopants in gallium arsenide with SUPREM 3.5. 247–250.

Robinson, H. G.. (1998). Process modeling of HgCdTe infrared photodetectors. Journal of Electronic Materials. 27(6). 589–594. 4 indexed citations

Robinson, H. G., et al.. (1998). Derivation of an analytical model to calculate junction depth in HgCdTe photodiodes. Journal of Applied Physics. 83(3). 1299–1304. 21 indexed citations

Robinson, H. G., et al.. (1998). Simulation of HgTe/CdTe interdiffusion using fundamental point defect mechanisms. Journal of Electronic Materials. 27(6). 672–679. 6 indexed citations

Syllaios, A. J., et al.. (1998). Optical absorption of un-implanted and implanted HgCdTe. Journal of Electronic Materials. 27(6). 703–708. 4 indexed citations

Robinson, H. G., et al.. (1997). Modeling of junction formation and drive-in in ion implanted HgCdTe. Journal of Electronic Materials. 26(6). 629–634. 20 indexed citations

Robinson, H. G., et al.. (1997). X-ray rocking curve analysis of ion implanted mercury cadmium telluride. Journal of Electronic Materials. 26(6). 600–605. 8 indexed citations

Robinson, H. G., et al.. (1997). Device modeling of HgCdTe vertically integrated photodiodes. Journal of Electronic Materials. 26(6). 678–682. 11 indexed citations

Robinson, H. G., et al.. (1996). Modeling ion implantation of HgCdTe. Journal of Electronic Materials. 25(8). 1336–1340. 13 indexed citations

10.

Helms, C. R., et al.. (1995). Process simulation for HgCdTe infrared focal plane array flexible manufacturing. Journal of Electronic Materials. 24(9). 1137–1142. 9 indexed citations

11.

Robinson, H. G., et al.. (1995). Study of end of range loop interactions with B+ implant damage using a boron doped diffusion layer. Journal of Applied Physics. 78(4). 2298–2302. 4 indexed citations

12.

Jones, K. S., et al.. (1995). Studies of point defect/dislocation loop interaction processes in silicon. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 96(1-2). 196–201. 14 indexed citations

13.

Robinson, H. G., et al.. (1994). Diffusion-limited interaction of dislocation loops and interstitials during dry oxidation in silicon. Applied Physics Letters. 65(4). 436–438. 9 indexed citations

14.

Robinson, H. G., et al.. (1993). Time Dependent Diffusion of P-Type Dopants in Gallium Arsenide. MRS Proceedings. 300. 3 indexed citations

15.

Robinson, H. G., Michael Deal, G.A.J. Amaratunga, et al.. (1992). Modeling uphill diffusion of Mg implants in GaAs using suprem-i v. Journal of Applied Physics. 71(6). 2615–2623. 30 indexed citations

16.

Jones, K. S., Emily Allen, H. G. Robinson, et al.. (1991). Extended defects of ion-implanted GaAs. Journal of Applied Physics. 70(11). 6790–6795. 17 indexed citations

17.

Robinson, H. G., Michael Deal, D. A. Stevenson, & K. S. Jones. (1991). Correlation of Dislocation Loop Formation and Time Dependent Diffusion of Implanted P-type Dopants in Gallium Arsenide. MRS Proceedings. 240. 1 indexed citations

18.

Deal, Michael & H. G. Robinson. (1990). Modeling co-implanted silicon and beryllium in gallium arsenide. Solid-State Electronics. 33(6). 665–673. 12 indexed citations

19.

Deal, Michael & H. G. Robinson. (1989). Diffusion of implanted beryllium in n- and p-type GaAs. Applied Physics Letters. 55(19). 1990–1992. 29 indexed citations

20.

Deal, Michael & H. G. Robinson. (1989). Diffusion of implanted beryllium in gallium arsenide as a function of anneal temperature and dose. Applied Physics Letters. 55(10). 996–998. 16 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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