D.C. DeFevere

490 total citations
9 papers, 345 citations indexed

About

D.C. DeFevere is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, D.C. DeFevere has authored 9 papers receiving a total of 345 indexed citations (citations by other indexed papers that have themselves been cited), including 7 papers in Electrical and Electronic Engineering, 6 papers in Condensed Matter Physics and 4 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in D.C. DeFevere's work include GaN-based semiconductor devices and materials (6 papers), Semiconductor Quantum Structures and Devices (4 papers) and Semiconductor materials and devices (4 papers). D.C. DeFevere is often cited by papers focused on GaN-based semiconductor devices and materials (6 papers), Semiconductor Quantum Structures and Devices (4 papers) and Semiconductor materials and devices (4 papers). D.C. DeFevere collaborates with scholars based in United States. D.C. DeFevere's co-authors include F. A. Kish, D. A. Vanderwater, Frank M. Steranka, G. E. Höfler, D. A. Steigerwald, R. Solomon, M. G. Craford, I.-H. Tan, T. D. Osentowski and M. J. Peanasky and has published in prestigious journals such as Applied Physics Letters, Proceedings of the IEEE and Electronics Letters.

In The Last Decade

D.C. DeFevere

8 papers receiving 308 citations

Peers

D.C. DeFevere

EEE

CMP

AMPO

MC

BE

Hirotatsu Ishii Japan

Franz Eberhard Germany

Masaaki Tomizawa Japan

T. Nittono Japan

L. Buydens Belgium

M. Saarinen Finland

J. Werking United States

Y.-J. Chan Taiwan

Won-Jin Choi United States

N. Hashizume Japan

Hirotatsu Ishii Japan

D.C. DeFevere

356 ×1.3

EEE

140 ×0.7

CMP

260 ×1.3

AMPO

78 ×1.6

MC

28 ×0.6

BE

Citations per year, relative to D.C. DeFevere D.C. DeFevere (= 1×) peers Hirotatsu Ishii

Countries citing papers authored by D.C. DeFevere

Since Specialization

Citations

This map shows the geographic impact of D.C. DeFevere's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D.C. DeFevere with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D.C. DeFevere more than expected).

Fields of papers citing papers by D.C. DeFevere

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D.C. DeFevere. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D.C. DeFevere. The network helps show where D.C. DeFevere may publish in the future.

Co-authorship network of co-authors of D.C. DeFevere

This figure shows the co-authorship network connecting the top 25 collaborators of D.C. DeFevere. A scholar is included among the top collaborators of D.C. DeFevere based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D.C. DeFevere. D.C. DeFevere is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

9 of 9 papers shown

1.

Vanderwater, D. A., I.-H. Tan, G. E. Höfler, D.C. DeFevere, & F. A. Kish. (1997). High-brightness AlGaInP light emitting diodes. Proceedings of the IEEE. 85(11). 1752–1764. 47 indexed citations

2.

Kish, F. A., D. A. Vanderwater, D.C. DeFevere, et al.. (1996). Highly reliable and efficient semiconductor wafer-bondedAlGaInP/GaP light-emitting diodes. Electronics Letters. 32(2). 132–134. 37 indexed citations

3.

Höfler, G. E., D. A. Vanderwater, D.C. DeFevere, et al.. (1996). Wafer bonding of 50-mm diameter GaP to AlGaInP-GaP light-emitting diode wafers. Applied Physics Letters. 69(6). 803–805. 42 indexed citations

4.

Steranka, Frank M., et al.. (1995). Temperature-dependent minority-carrier lifetime measurements of red AlGaAs light emitting diodes. Journal of Electronic Materials. 24(10). 1407–1412. 4 indexed citations

5.

Kish, F. A., Frank M. Steranka, D.C. DeFevere, et al.. (1994). Very high-efficiency semiconductor wafer-bonded transparent-substrate (AlxGa1−x)0.5In0.5P/GaP light-emitting diodes. Applied Physics Letters. 64(21). 2839–2841. 184 indexed citations

6.

Barrera, Júnior, et al.. (1976). High-Q GaAs tuning varactors. 120–121. 3 indexed citations

7.

Barrera, Júnior, et al.. (1976). Minimum Resistance Microwave Diodes. 14–18.

8.

Solomon, R. & D.C. DeFevere. (1972). Efficiency shift in very high efficiency GaP (Zn–O) diodes. Applied Physics Letters. 21(6). 257–260. 18 indexed citations

9.

Solomon, R. & D.C. DeFevere. (1972). Epitaxial GaP by a semi-sealed dip process for high efficiency red LED's. Journal of Electronic Materials. 1(1). 25–37. 10 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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