O. Seifarth

576 total citations
25 papers, 487 citations indexed

About

O. Seifarth is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, O. Seifarth has authored 25 papers receiving a total of 487 indexed citations (citations by other indexed papers that have themselves been cited), including 23 papers in Electrical and Electronic Engineering, 20 papers in Materials Chemistry and 6 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in O. Seifarth's work include Semiconductor materials and devices (21 papers), Electronic and Structural Properties of Oxides (8 papers) and Semiconductor materials and interfaces (5 papers). O. Seifarth is often cited by papers focused on Semiconductor materials and devices (21 papers), Electronic and Structural Properties of Oxides (8 papers) and Semiconductor materials and interfaces (5 papers). O. Seifarth collaborates with scholars based in Germany, Sweden and South Korea. O. Seifarth's co-authors include Thomas Schroeder, H.‐J. Müssig, P. Zaumseil, Grzegorz Łupina, A. Giussani, L. Kipp, M. Skibowski, Kai Roßnagel, P. Storck and J. Pollmann and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Journal of Applied Physics.

In The Last Decade

O. Seifarth

25 papers receiving 473 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
O. Seifarth Germany 14 356 282 177 80 78 25 487
Mangej Singh India 10 281 0.8× 177 0.6× 92 0.5× 60 0.8× 142 1.8× 42 459
I. Ya. Nikiforov Russia 11 342 1.0× 212 0.8× 101 0.6× 31 0.4× 66 0.8× 73 433
J. Buršík Czechia 13 413 1.2× 202 0.7× 312 1.8× 78 1.0× 82 1.1× 53 542
M. V. Yablonskikh Russia 14 491 1.4× 244 0.9× 261 1.5× 62 0.8× 112 1.4× 30 657
B. A. Gizhevskiĭ Russia 13 341 1.0× 126 0.4× 175 1.0× 105 1.3× 58 0.7× 54 502
Uwe Treske Germany 12 283 0.8× 184 0.7× 83 0.5× 50 0.6× 89 1.1× 19 387
T. S. Tripathi Finland 19 620 1.7× 370 1.3× 251 1.4× 101 1.3× 59 0.8× 42 771
J. C. Woicik United States 8 408 1.1× 239 0.8× 151 0.9× 48 0.6× 102 1.3× 20 524
Hongping Li China 14 281 0.8× 144 0.5× 302 1.7× 150 1.9× 43 0.6× 40 543
V. Kubilius Lithuania 14 301 0.8× 243 0.9× 170 1.0× 74 0.9× 58 0.7× 37 462

Countries citing papers authored by O. Seifarth

Since Specialization
Citations

This map shows the geographic impact of O. Seifarth's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by O. Seifarth with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites O. Seifarth more than expected).

Fields of papers citing papers by O. Seifarth

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by O. Seifarth. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by O. Seifarth. The network helps show where O. Seifarth may publish in the future.

Co-authorship network of co-authors of O. Seifarth

This figure shows the co-authorship network connecting the top 25 collaborators of O. Seifarth. A scholar is included among the top collaborators of O. Seifarth based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with O. Seifarth. O. Seifarth is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Seifarth, O., G. Lippert, J. Da̧browski, et al.. (2011). Graphene directly grown on SiO<inf>2</inf>-based insulators. 1–4. 1 indexed citations
2.
Łupina, Grzegorz, O. Seifarth, Piotr Dudek, et al.. (2010). Characterization of group II hafnates and zirconates for metal–insulator–metal capacitors. physica status solidi (b). 248(2). 323–326. 20 indexed citations
3.
Seifarth, O., B. Dietrich, P. Zaumseil, et al.. (2010). Integration of strained and relaxed silicon thin films on silicon wafers via engineered oxide heterostructures: Experiment and theory. Journal of Applied Physics. 108(7). 5 indexed citations
4.
Wilke, Andreas, Jun‐Mo Yang, O. Seifarth, et al.. (2010). Complex interface and growth analysis of single crystalline epi‐Si(111)/Y2O3/ Pr2O3/Si(111) heterostructures: Strain engineering by oxide buffer control. Surface and Interface Analysis. 43(4). 827–835. 5 indexed citations
5.
Seifarth, O., Michael Schubert, A. Giussani, et al.. (2010). Single crystalline Pr2−xYxO3 (x=–2) dielectrics on Si with tailored electronic and crystallographic structure. Journal of Applied Physics. 108(10). 10 indexed citations
6.
Łupina, Grzegorz, O. Seifarth, Grzegorz Kozłowski, et al.. (2009). Hf- and Zr-based alkaline earth perovskite dielectrics for memory applications. Microelectronic Engineering. 86(7-9). 1842–1844. 23 indexed citations
7.
Schroeder, Thomas, A. Giussani, J. Da̧browski, et al.. (2009). Engineered Si wafers: On the role of oxide heterostructures as buffers for the integration of alternative semiconductors. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 6(3). 653–662. 26 indexed citations
8.
Zaumseil, P., A. Giussani, O. Seifarth, et al.. (2009). Characterization of Semiconductor Films Epitaxially Grown on Thin Metal Oxide Buffer Layers. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 156-158. 467–472. 7 indexed citations
9.
Schaefer, Andreas, Volkmar Zielasek, A. Sandell, et al.. (2009). Growth of praseodymium oxide on Si(111) under oxygen-deficient conditions. Physical Review B. 80(4). 10 indexed citations
10.
Seifarth, O., J. Da̧browski, P. Zaumseil, et al.. (2009). On the band gaps and electronic structure of thin single crystalline praseodymium oxide layers on Si(111). Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 27(1). 271–276. 22 indexed citations
11.
Łupina, Grzegorz, et al.. (2009). Improving the dielectric constant of Al2O3 by cerium substitution for high-k MIM applications. Surface Science. 604(3-4). 276–282. 17 indexed citations
12.
Wenger, Christian, Grzegorz Łupina, Mindaugas Lukosius, et al.. (2008). Microscopic model for the nonlinear behavior of high-k metal-insulator-metal capacitors. Journal of Applied Physics. 103(10). 48 indexed citations
13.
Giussani, A., O. Seifarth, H.‐J. Müssig, et al.. (2008). The influence of lattice oxygen on the initial growth behavior of heteroepitaxial Ge layers on single crystalline PrO2(111)∕Si(111) support systems. Journal of Applied Physics. 103(8). 27 indexed citations
14.
Schroeder, Thomas, I. Costina, P. Storck, et al.. (2008). Lattice engineering of dielectric heterostructures on Si by isomorphic oxide-on-oxide epitaxy. Journal of Applied Physics. 103(8). 13 indexed citations
15.
16.
Schroeder, Thomas, I. Costina, A. Giussani, et al.. (2007). Self-assembled Ge nanocrystals on high-k cubic Pr2O3(111)∕Si(111) support systems. Journal of Applied Physics. 102(3). 17 indexed citations
17.
Starke, Ulrich, Massimo Tallarida, Abhishek Kumar, et al.. (2004). Reconstruction of Cleaved 6H-SiC Surfaces. Materials science forum. 457-460. 391–394. 4 indexed citations
18.
Seifarth, O., et al.. (2004). On the charge-density-wave mechanism of layered 2H-TaSe2: photoemission results. Journal of Electron Spectroscopy and Related Phenomena. 137-140. 675–679. 3 indexed citations
19.
Adelung, Rainer, J. Brandt, Kai Roßnagel, et al.. (2001). Tuning Dimensionality by Nanowire Adsorption on Layered Materials. Physical Review Letters. 86(7). 1303–1306. 21 indexed citations
20.
Roßnagel, Kai, O. Seifarth, L. Kipp, et al.. (2001). Fermi surface of2H−NbSe2and its implications on the charge-density-wave mechanism. Physical review. B, Condensed matter. 64(23). 104 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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