Y. S. Park

931 total citations
33 papers, 769 citations indexed

About

Y. S. Park is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Computational Mechanics. According to data from OpenAlex, Y. S. Park has authored 33 papers receiving a total of 769 indexed citations (citations by other indexed papers that have themselves been cited), including 23 papers in Electrical and Electronic Engineering, 20 papers in Atomic and Molecular Physics, and Optics and 12 papers in Computational Mechanics. Recurrent topics in Y. S. Park's work include Semiconductor materials and devices (12 papers), Ion-surface interactions and analysis (11 papers) and Semiconductor materials and interfaces (11 papers). Y. S. Park is often cited by papers focused on Semiconductor materials and devices (12 papers), Ion-surface interactions and analysis (11 papers) and Semiconductor materials and interfaces (11 papers). Y. S. Park collaborates with scholars based in United States and South Korea. Y. S. Park's co-authors include Phil Won Yu, J. R. Schneider, D. C. Reynolds, T. C. Collins, C. W. Litton, D. W. Langer, Y. K. Yeo, R. N. Euwema, John T. Grant and Frank L. Pedrotti and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Y. S. Park

32 papers receiving 716 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Y. S. Park United States 16 514 418 396 86 86 33 769
D. E. Hill United States 14 471 0.9× 291 0.7× 527 1.3× 36 0.4× 34 0.4× 26 769
Jesse G. Wales United States 4 372 0.7× 233 0.6× 261 0.7× 44 0.5× 35 0.4× 6 529
A. Nouailhat France 17 662 1.3× 241 0.6× 602 1.5× 40 0.5× 56 0.7× 90 950
Y. Osaka Japan 18 792 1.5× 751 1.8× 193 0.5× 73 0.8× 109 1.3× 47 1.1k
J. M. Meese United States 15 416 0.8× 337 0.8× 209 0.5× 55 0.6× 78 0.9× 51 628
M. Grasso United States 13 463 0.9× 491 1.2× 413 1.0× 53 0.6× 61 0.7× 15 796
W. Czaja Switzerland 15 399 0.8× 315 0.8× 321 0.8× 28 0.3× 55 0.6× 47 622
М. К. Шейнкман Ukraine 12 336 0.7× 353 0.8× 182 0.5× 39 0.5× 43 0.5× 70 531
Yoshifumi Mori Japan 17 739 1.4× 297 0.7× 632 1.6× 38 0.4× 33 0.4× 46 871
D. N. Mirlin Russia 17 411 0.8× 316 0.8× 610 1.5× 23 0.3× 59 0.7× 47 849

Countries citing papers authored by Y. S. Park

Since Specialization
Citations

This map shows the geographic impact of Y. S. Park's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Y. S. Park with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Y. S. Park more than expected).

Fields of papers citing papers by Y. S. Park

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Y. S. Park. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Y. S. Park. The network helps show where Y. S. Park may publish in the future.

Co-authorship network of co-authors of Y. S. Park

This figure shows the co-authorship network connecting the top 25 collaborators of Y. S. Park. A scholar is included among the top collaborators of Y. S. Park based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Y. S. Park. Y. S. Park is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Langer, D. W., et al.. (1983). The effect of low pressure plasma on Si–SiO2 structures and GaAs substrates. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 1(3). 799–802. 22 indexed citations
2.
Bhattacharya, R. S., et al.. (1982). Fluence dependence of displacement damage, residual defects, and electrical properties of high-temperature-annealed Se+-implanted GaAs. Journal of Applied Physics. 53(7). 4821–4825. 12 indexed citations
3.
Yeo, Y. K., et al.. (1982). Correlation of electrical carrier and atomic profiles of Mg implants in GaAs. Journal of Applied Physics. 53(9). 6148–6153. 21 indexed citations
4.
Park, Y. S., et al.. (1980). Characterization of ion-implanted GaAs by ellipsometry. Journal of Applied Physics. 51(4). 2024–2029. 10 indexed citations
5.
Yeo, Y. K., Frank L. Pedrotti, & Y. S. Park. (1980). Modification of the amphoteric activity of Ge implants in GaAs by dual implantation of Ge and As. Journal of Applied Physics. 51(11). 5785–5788. 3 indexed citations
6.
Theis, W. M., et al.. (1979). Glow-discharge optical spectroscopy measurement of B-, Ge-, and Mg-implanted GaAs. Journal of Applied Physics. 50(12). 8019–8024. 2 indexed citations
7.
Yu, Phil Won & Y. S. Park. (1979). Photoluminescence in Mn-implanted GaAs—An explanation on the ∼1.40-eV emission. Journal of Applied Physics. 50(2). 1097–1103. 49 indexed citations
8.
Yeo, Y. K., Y. S. Park, & Phil Won Yu. (1979). Electrical measurements and optical activation studies in Mg-implanted GaAs. Journal of Applied Physics. 50(5). 3274–3281. 20 indexed citations
9.
Park, Y. S., et al.. (1976). An Abrupt Dopant Profile in GaAs Produced by Te Implantation. Journal of The Electrochemical Society. 123(10). 1588–1589. 2 indexed citations
10.
Yu, Phil Won, Y. S. Park, & John T. Grant. (1976). Electroluminescence in Br-, Cl-, and Zn-implanted CuInSe2 p-n junction diodes. Applied Physics Letters. 28(4). 214–216. 22 indexed citations
11.
Look, D. C., et al.. (1975). Ohmic Contacts to Al‐Implanted ZnSe. Journal of The Electrochemical Society. 122(3). 450–451.
12.
Park, Y. S., et al.. (1974). Electrical characteristics of Al-implanted ZnSe. Applied Physics Letters. 24(9). 435–436. 3 indexed citations
13.
Park, Y. S., et al.. (1974). Injection electroluminescence in phosphorous-ion-implanted ZnSe p-n junction diodes. Journal of Applied Physics. 45(3). 1444–1446. 31 indexed citations
14.
Yu, Phil Won & Y. S. Park. (1974). Sharp-line and broad-band emission in AgGaS2 crystals. Journal of Applied Physics. 45(2). 823–827. 33 indexed citations
15.
Litton, C. W., D. C. Reynolds, T. C. Collins, & Y. S. Park. (1970). Exciton—LO-Phonon Interaction and the Anti-Stokes Emission Line in CdS. Physical Review Letters. 25(23). 1619–1621. 17 indexed citations
16.
Wei, David, Claude M. Penchina, & Y. S. Park. (1968). Observation of Oscillatory Lifetime in CdS. physica status solidi (b). 29(1). 1 indexed citations
17.
Park, Y. S. & J. R. Schneider. (1968). Oscillations in Exciton Emission in the Excitation Spectra of ZnSe and CdS. Physical Review Letters. 21(12). 798–800. 15 indexed citations
18.
Park, Y. S. & J. R. Schneider. (1968). Index of Refraction of ZnO. Journal of Applied Physics. 39(7). 3049–3052. 94 indexed citations
19.
Park, Y. S., C. W. Litton, T. C. Collins, & D. C. Reynolds. (1966). Exciton Spectrum of ZnO. Physical Review. 143(2). 512–519. 189 indexed citations
20.
Park, Y. S. & D. W. Langer. (1964). Oscillatory Photoconductivity of CdS. Physical Review Letters. 13(13). 392–394. 26 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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