H. Murrmann

508 total citations
10 papers, 378 citations indexed

About

H. Murrmann is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, H. Murrmann has authored 10 papers receiving a total of 378 indexed citations (citations by other indexed papers that have themselves been cited), including 8 papers in Electrical and Electronic Engineering, 4 papers in Atomic and Molecular Physics, and Optics and 3 papers in Materials Chemistry. Recurrent topics in H. Murrmann's work include Semiconductor materials and interfaces (3 papers), Advancements in Semiconductor Devices and Circuit Design (3 papers) and Silicon Carbide Semiconductor Technologies (3 papers). H. Murrmann is often cited by papers focused on Semiconductor materials and interfaces (3 papers), Advancements in Semiconductor Devices and Circuit Design (3 papers) and Silicon Carbide Semiconductor Technologies (3 papers). H. Murrmann collaborates with scholars based in Germany. H. Murrmann's co-authors include Dietrich Widmann and J. Graul and has published in prestigious journals such as IEEE Journal of Solid-State Circuits, IEEE Transactions on Electron Devices and Solid-State Electronics.

In The Last Decade

H. Murrmann

10 papers receiving 353 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
H. Murrmann Germany	8	330	165	106	26	22	10	378
C. Arnodo France	11	372 1.1×	195 1.2×	49 0.5×	13 0.5×	23 1.0×	23	393
Dietrich Widmann Germany	8	264 0.8×	133 0.8×	76 0.7×	65 2.5×	30 1.4×	13	340
V.F. Drobny United States	7	217 0.7×	51 0.3×	207 2.0×	25 1.0×	17 0.8×	19	361
J.R. Pfiester United States	13	661 2.0×	166 1.0×	128 1.2×	49 1.9×	11 0.5×	49	673
A. Naem Canada	9	272 0.8×	105 0.6×	62 0.6×	40 1.5×	14 0.6×	28	311
N. Zamani United States	5	364 1.1×	72 0.4×	127 1.2×	12 0.5×	17 0.8×	12	391
B. Roberds United States	9	461 1.4×	53 0.3×	108 1.0×	84 3.2×	41 1.9×	15	503
C.H. Ling Singapore	14	585 1.8×	95 0.6×	124 1.2×	27 1.0×	32 1.5×	77	614
Ming-ta Hsieh United States	9	475 1.4×	104 0.6×	174 1.6×	87 3.3×	40 1.8×	23	529
W. van Gelder United States	6	235 0.7×	97 0.6×	74 0.7×	54 2.1×	8 0.4×	8	280

Countries citing papers authored by H. Murrmann

Since Specialization

Citations

This map shows the geographic impact of H. Murrmann's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. Murrmann with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. Murrmann more than expected).

Fields of papers citing papers by H. Murrmann

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. Murrmann. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. Murrmann. The network helps show where H. Murrmann may publish in the future.

Co-authorship network of co-authors of H. Murrmann

This figure shows the co-authorship network connecting the top 25 collaborators of H. Murrmann. A scholar is included among the top collaborators of H. Murrmann based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H. Murrmann. H. Murrmann is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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10 of 10 papers shown

1.

Murrmann, H., et al.. (1980). Yield modeling of integrated circuits. 9(1). 38–40. 10 indexed citations

2.

Murrmann, H.. (1976). Modern bipolar technology for high-performance ICs. 5. 353. 3 indexed citations

3.

Graul, J., et al.. (1976). High-performance transistors with arsenic-implanted polysil emitters. IEEE Journal of Solid-State Circuits. 11(4). 491–495. 101 indexed citations

4.

Graul, J., et al.. (1975). Ion implanted bipolar high performance transistors with polysil emitter. 450–454. 8 indexed citations

5.

Murrmann, H., et al.. (1975). A 1024-bit ECL-PROM with 15 ns access. 106–107. 2 indexed citations

6.

Murrmann, H., et al.. (1970). Correction terms for contacts to diffused resistors. IEEE Transactions on Electron Devices. 17(6). 484–485. 7 indexed citations

7.

Murrmann, H. & Dietrich Widmann. (1969). Current crowding on metal contacts to planar devices. IEEE Transactions on Electron Devices. 16(12). 1022–1024. 177 indexed citations

8.

Murrmann, H. & Dietrich Widmann. (1969). Current crowding on metal contacts to planer devices. 162–163. 15 indexed citations

9.

Murrmann, H. & Dietrich Widmann. (1969). Messung des übergangswiderstandes zwischen metall und diffusionsschicht in Si-planarelementen. Solid-State Electronics. 12(11). 879–886. 48 indexed citations

10.

Murrmann, H., et al.. (1963). Elektronenoptische Untersuchung des magnetischen Streufeldes �ber (110)-Fl�chen prismatischer Nickel-Einkristalle. The European Physical Journal A. 174(4). 536–545. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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