Byoung‐Gue Min

843 total citations
55 papers, 632 citations indexed

About

Byoung‐Gue Min is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Mechanical Engineering. According to data from OpenAlex, Byoung‐Gue Min has authored 55 papers receiving a total of 632 indexed citations (citations by other indexed papers that have themselves been cited), including 39 papers in Electrical and Electronic Engineering, 30 papers in Condensed Matter Physics and 13 papers in Mechanical Engineering. Recurrent topics in Byoung‐Gue Min's work include GaN-based semiconductor devices and materials (30 papers), Semiconductor materials and devices (16 papers) and Ga2O3 and related materials (13 papers). Byoung‐Gue Min is often cited by papers focused on GaN-based semiconductor devices and materials (30 papers), Semiconductor materials and devices (16 papers) and Ga2O3 and related materials (13 papers). Byoung‐Gue Min collaborates with scholars based in South Korea, Australia and United States. Byoung‐Gue Min's co-authors include J. H. Hodgkin, Z. H. Stachurski, Jong‐Won Lim, Ho‐Kyun Ahn, Dong Min Kang, Heiko G. Kurz, P.P. Altermatt, Satish Kumar, Amir Dastgheib-Shirazi and Jong Min Lee and has published in prestigious journals such as Polymer, Composites Part B Engineering and IEEE Transactions on Electron Devices.

In The Last Decade

Byoung‐Gue Min

50 papers receiving 596 citations

Peers

Countries citing papers authored by Byoung‐Gue Min

Since Specialization

Citations

This map shows the geographic impact of Byoung‐Gue Min's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Byoung‐Gue Min with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Byoung‐Gue Min more than expected).

Fields of papers citing papers by Byoung‐Gue Min

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Byoung‐Gue Min. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Byoung‐Gue Min. The network helps show where Byoung‐Gue Min may publish in the future.

Co-authorship network of co-authors of Byoung‐Gue Min

This figure shows the co-authorship network connecting the top 25 collaborators of Byoung‐Gue Min. A scholar is included among the top collaborators of Byoung‐Gue Min based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Byoung‐Gue Min. Byoung‐Gue Min is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Optimization of central source contact length to mitigate temperature variation and thermal crosstalk in multi-finger AlGaN/GaN HEMTs: Reliability-based simulation 2025 ·Materials Science in Semiconductor Processing ·(unknown), (unknown), Tae-Sung Kim, (unknown), Byoung‐Gue Min, Dong Min Kang, Hyun‐Seok Kim	0
2	Enhancing Ohmic Contacts in GaN HEMT Through Optimization of Ramp-Up Rate in Annealing Process 2024 ·Hak Jun Kim, (unknown), (unknown), (unknown), Byoung‐Gue Min, Junhyung Jeong, (unknown), Woojin Chang, (unknown), (unknown)	0
3	Enhanced Operational Characteristics Attained by Applying HfO2 as Passivation in AlGaN/GaN High-Electron-Mobility Transistors: A Simulation Study 2023 ·Micromachines ·Jun‐Hyeok Choi, (unknown), Dohyung Kim, Jihun Kim, (unknown), (unknown), Byoung‐Gue Min, Dong Min Kang, Hyun‐Seok Kim	7
4	Optimization of Gate-Head-Top/Bottom Lengths of AlGaN/GaN High-Electron-Mobility Transistors with a Gate-Recessed Structure for High-Power Operations: A Simulation Study 2023 ·Micromachines ·(unknown), Jun‐Hyeok Choi, (unknown), (unknown), (unknown), Byoung‐Gue Min, Dong Min Kang, Jung Han Choi, Hyun‐Seok Kim	2
5	Optimized recess etching criteria for T‐gate fabrication achieving f _t = 290 GHz at L _g = 124 nm in metamorphic high electron mobility transistor with In _0.7 Ga _0.3 As channel 2023 ·Electronics Letters ·(unknown), Byoung‐Gue Min, (unknown), Woojin Chang, Dong Min Kang, (unknown), Hak Jun Kim, (unknown)	1
6	Improved RF Performances by Applying Asymmetric Passivation and Air-Bridged Field Plate in AlGaN/GaN HEMTs With Reliability-Based Simulation 2023 ·IEEE Transactions on Electron Devices ·(unknown), (unknown), (unknown), (unknown), (unknown), Byoung‐Gue Min, Dong Min Kang, Hyun‐Seok Kim	3
7	Analysis of Operational Characteristics of AlGaN/GaN High-Electron-Mobility Transistor with Various Slant-Gate-Based Structures: A Simulation Study 2022 ·Micromachines ·Junho Lee, Jun‐Hyeok Choi, (unknown), Dohyung Kim, Byoung‐Gue Min, Dong Min Kang, Jung Han Choi, Hyun‐Seok Kim	6
8	W‐Band MMIC chipset in 0.1‐μm mHEMT technology 2020 ·ETRI Journal ·(unknown), Woojin Chang, Dong Min Kang, Byoung‐Gue Min, (unknown), Sung‐Jae Chang, (unknown), (unknown), (unknown), Jong-Pil Kim, (unknown), (unknown)	4
9	A Study on the Behavior of Gate Recess Etch by Photoresist Openings on Ohmic Electrode in InAlAs/InGaAs mHEMT Devices 2020 ·Journal of the Korean Physical Society ·Byoung‐Gue Min, Sung‐Jae Chang, (unknown), (unknown), (unknown), Woo Jin Jang, (unknown)	4
10	Improvement of Proton Radiation Hardness Using ALD-Deposited Al₂O₃ Gate Insulator in GaN-Based MIS-HEMTs 2019 ·ECS Journal of Solid State Science and Technology ·Sung‐Jae Chang, (unknown), (unknown), Jeong-Jin Kim, (unknown), Sung‐Bum Bae, Dong‐Seok Kim, Young-Ho Bae, (unknown), Ho‐Kyun Ahn, Byoung‐Gue Min, (unknown), Jong‐Won Lim, (unknown)	9
11	DC and RF Characteristics of Enhancement-Mode Al₂O₃/AlGaN/GaN MIS-HEMTs Fabricated by Shallow Recess Combined with Fluorine-Treatment and Deep Recess 2018 ·ECS Journal of Solid State Science and Technology ·(unknown), Sung‐Jae Chang, (unknown), Ho‐Kyun Ahn, (unknown), Jeong-Jin Kim, Seong‐Il Kim, Byoung‐Gue Min, (unknown), (unknown), (unknown), (unknown), Jong‐Won Lim	3
12	SiGe CMOS on (110) channel orientation with mobility boosters : Surface orientation, channel directions, and uniaxial strain 2010 ·Jungwoo Oh, (unknown), Kyeong‐Sik Min, (unknown), Byoung‐Gue Min, (unknown), (unknown), Wei Yip Loh, Joel Barnett, Kang Min Ok, (unknown), Casey Smith, (unknown), P. D. Kirsch, R. Jammy	9
13	An X-Band Carbon-Doped InGaP/GaAs Heterojunction Bipolar Transistor MMIC Oscillator 2005 ·ETRI Journal ·Young-Gi Kim, (unknown), Seong‐Il Kim, Byoung‐Gue Min, Jongmin Lee, Kyoung Ho Lee	3
14	High Speed Driver IC for Laser Modulation In InP HBT Technology 2004 ·대한전자공학회 ISOCC ·(unknown), Jinwook Burm, Seong‐Il Kim, Byoung‐Gue Min, (unknown)	0
15	A Wafer Level Packaged Limiting Amplifier for 10Gbps Optical Transmission System 2004 ·JSTS Journal of Semiconductor Technology and Science ·(unknown), Byoung‐Gue Min, Seong‐Il Kim, (unknown), Jongmin Lee, (unknown)	7
16	The base contact recombination current and its effect on the current gain of surface-passivated InGaP/GaAs HBTs 2001 ·Materials Science and Engineering B ·Jongmin Lee, Tae‐Woo Lee, Sung Ho Park, Byoung‐Gue Min, (unknown), (unknown), In-Hoon Choi	5
17	Comparison of frequency responses of spiral inductors with different figures 2001 ·Semiconductor Science and Technology ·(unknown), Tae‐Woo Lee, Sung Ho Park, Byoung‐Gue Min, (unknown), Kyungho Lee, In-Hoon Choi	5
18	Depression of glass transition temperature due to the chain extension in glassy state 1999 ·Polymer ·(unknown), Byoung‐Gue Min	21
19	Transformation Behaviour of High Temperature Thermoelectric $FeSi_2$ 1995 ·Han-guk hyeonmigyeong hakoeji/Applied microscopy ·(unknown), Byoung‐Gue Min, (unknown)	1
20	Cure kinetics of elementary reactions of a DGEBA/DDS epoxy resin: 1. Glass transition temperature versus conversion 1993 ·Polymer ·Byoung‐Gue Min, Z. H. Stachurski, J. H. Hodgkin	45

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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