B. Khan

626 total citations
20 papers, 323 citations indexed

About

B. Khan is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Biomedical Engineering. According to data from OpenAlex, B. Khan has authored 20 papers receiving a total of 323 indexed citations (citations by other indexed papers that have themselves been cited), including 16 papers in Electrical and Electronic Engineering, 11 papers in Materials Chemistry and 6 papers in Biomedical Engineering. Recurrent topics in B. Khan's work include Semiconductor materials and devices (9 papers), Silicon Nanostructures and Photoluminescence (8 papers) and Thin-Film Transistor Technologies (6 papers). B. Khan is often cited by papers focused on Semiconductor materials and devices (9 papers), Silicon Nanostructures and Photoluminescence (8 papers) and Thin-Film Transistor Technologies (6 papers). B. Khan collaborates with scholars based in United States, Finland and Germany. B. Khan's co-authors include Khurram Shahzad, Gary S. Tompa, Eric Forsythe, Jacob B. Khurgin, N. R. Taskar, D. Dorman, D. A. Cammack, D. J. Olego, P. Parries and John Golz and has published in prestigious journals such as The Journal of Chemical Physics, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

B. Khan

20 papers receiving 310 citations

Peers

B. Khan

EEE

AMPO

M. Togo Japan

S. J. Whang Singapore

T. Bucelot United States

Jeff A. Babcock United States

E. Dentoni Litta Belgium

S. Ramey United States

M.F. Li Singapore

J.M. Higman United States

H. Takauchi Japan

E.J. Prinz United States

M. Togo Japan

B. Khan

599 ×2.2

EEE

66 ×0.4

62 ×0.8

AMPO

69 ×1.2

18 ×0.4

Citations per year, relative to B. Khan B. Khan (= 1×) peers M. Togo

Countries citing papers authored by B. Khan

Since Specialization

Citations

This map shows the geographic impact of B. Khan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. Khan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. Khan more than expected).

Fields of papers citing papers by B. Khan

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. Khan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. Khan. The network helps show where B. Khan may publish in the future.

Co-authorship network of co-authors of B. Khan

This figure shows the co-authorship network connecting the top 25 collaborators of B. Khan. A scholar is included among the top collaborators of B. Khan based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with B. Khan. B. Khan is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Khan, B., et al.. (2024). Nuclear quantum effects on glassy water under pressure: Vitrification and pressure-induced transformations. The Journal of Chemical Physics. 161(23). 3 indexed citations

Barth, J., W. Reohr, P. Parries, et al.. (2008). A 500 MHz Random Cycle, 1.5 ns Latency, SOI Embedded DRAM Macro Featuring a Three-Transistor Micro Sense Amplifier. IEEE Journal of Solid-State Circuits. 43(1). 86–95. 47 indexed citations

Parries, P., B. Khan, Yohei Otani, et al.. (2005). A 0.168μm/sup 2/0.11μm/sup 2/ highly scalable high performance embedded DRAM cell for 90/65-nm logic applications. 31–32. 2 indexed citations

Kirihata, T., P. Parries, David R. Hanson, et al.. (2005). An 800-MHz embedded DRAM with a concurrent refresh mode. IEEE Journal of Solid-State Circuits. 40(6). 1377–1387. 35 indexed citations

Iyer, S. Sundar Kumar, et al.. (2002). 0.25 μm merged bulk DRAM and SOI logic using patterned SOI. 66–67. 4 indexed citations

Khurgin, Jacob B., Eric Forsythe, Gary S. Tompa, & B. Khan. (1996). Influence of the size dispersion on the emission spectra of the Si nanostructures. Applied Physics Letters. 69(9). 1241–1243. 43 indexed citations

Forsythe, Eric, J.A. Sprague, B. Khan, et al.. (1996). Study of IBAD Deposited AlN Films for Vacuum Diode Electron Emission. MRS Proceedings. 449. 1 indexed citations

Forsythe, Eric, Edward A. Whittaker, David C. Morton, et al.. (1995). Electrical Characteristics and Temperature Effects of Electroluminescing Silicon Nanocrystals. MRS Proceedings. 405. 1 indexed citations

Khurgin, Jacob B., et al.. (1994). Influence of the Dispersion of the Size of the Si Nanocrystals on their Emission Spectra. MRS Proceedings. 358. 6 indexed citations

10.

Whittaker, Edward A., Fred H. Pollak, Gary S. Tompa, et al.. (1994). Correlation Between Quantum Nanocrystal Particle Size and Photoluminescence Using Raman Scattering. MRS Proceedings. 358. 4 indexed citations

11.

Tompa, Gary S., David C. Morton, Yuangang Lu, et al.. (1994). UV-Visible-IR Electroluminescence from Si and Ge Nanocrystals in a Wider Bandgap Matrix. MRS Proceedings. 358. 17 indexed citations

12.

Taskar, N. R., B. Khan, D. Dorman, & Khurram Shahzad. (1993). Novel technique for p-type nitrogen doped ZnSe epitaxial layers. Applied Physics Letters. 62(3). 270–272. 50 indexed citations

13.

Khan, B., et al.. (1991). Low-temperature polysilicon TFT with gate oxide grown by high-pressure oxidation. IEEE Electron Device Letters. 12(7). 390–392. 8 indexed citations

14.

Khan, B., et al.. (1990). High Performance Polysilicon Thin Film Transistors. MRS Proceedings. 182. 1 indexed citations

15.

Colak, S., et al.. (1990). Observation of hysteresis, transients, and photoeffects in the electrical properties of ZnSe/GaAs heterojunctions. Journal of Applied Physics. 68(10). 5226–5233. 5 indexed citations

16.

Khan, B., et al.. (1990). Activation energy of source-drain current in hydrogenated and unhydrogenated polysilicon thin-film transistors. IEEE Transactions on Electron Devices. 37(7). 1727–1734. 48 indexed citations

17.

Shahzad, Khurram, B. Khan, D. J. Olego, & D. A. Cammack. (1990). Discrete donor-acceptor pair lines, two-hole excited states, and inelastic light scattering from nitrogen centers in zinc selenide epitaxial layers. Physical review. B, Condensed matter. 42(17). 11240–11244. 26 indexed citations

18.

Khan, B., et al.. (1987). Transient photocurrent response in polycrystalline silicon thin films. Journal of Applied Physics. 62(8). 3244–3248. 18 indexed citations

19.

Baumgart, Helmut, et al.. (1985). Twin Stabilzed Planar Growth of Soi Films. MRS Proceedings. 53. 1 indexed citations

20.

Khan, B., et al.. (1985). Leakage Currents in P-Channel Accumulation Mode Tft's. MRS Proceedings. 53. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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