Guangle Zhou

623 total citations
11 papers, 511 citations indexed

About

Guangle Zhou is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Guangle Zhou has authored 11 papers receiving a total of 511 indexed citations (citations by other indexed papers that have themselves been cited), including 10 papers in Electrical and Electronic Engineering, 6 papers in Biomedical Engineering and 2 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Guangle Zhou's work include Semiconductor materials and devices (10 papers), Advancements in Semiconductor Devices and Circuit Design (10 papers) and Nanowire Synthesis and Applications (6 papers). Guangle Zhou is often cited by papers focused on Semiconductor materials and devices (10 papers), Advancements in Semiconductor Devices and Circuit Design (10 papers) and Nanowire Synthesis and Applications (6 papers). Guangle Zhou collaborates with scholars based in United States. Guangle Zhou's co-authors include Alan Seabaugh, Patrick Fay, T. Vasen, Mark A. Wistey, Yeqing Lu, Huili Grace Xing, Rui Li, Qingmin Liu, Qin Zhang and Tom Kosel and has published in prestigious journals such as Applied Physics Letters, IEEE Electron Device Letters and ECS Transactions.

In The Last Decade

Guangle Zhou

11 papers receiving 491 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Guangle Zhou United States	8	501	178	51	28	3	11	511
Shyam Raghunathan United States	6	483 1.0×	126 0.7×	65 1.3×	32 1.1×	3 1.0×	8	498
C. Comboroure France	9	341 0.7×	128 0.7×	33 0.6×	40 1.4×	3 1.0×	12	364
V. Maffini-Alvaro France	12	367 0.7×	161 0.9×	30 0.6×	23 0.8×	4 1.3×	20	378
B. Cretu France	13	499 1.0×	74 0.4×	53 1.0×	20 0.7×	3 1.0×	56	508
Suresh Gundapaneni India	6	523 1.0×	132 0.7×	28 0.5×	18 0.6×	2 0.7×	11	528
Sanjeewa Dissanayake Japan	6	387 0.8×	118 0.7×	90 1.8×	52 1.9×	5 1.7×	7	398
P. Patruno United States	12	438 0.9×	109 0.6×	26 0.5×	12 0.4×	2 0.7×	34	444
Keat Mun Hoe Singapore	10	325 0.6×	161 0.9×	74 1.5×	53 1.9×	5 1.7×	18	339
B. Duriez France	11	424 0.8×	129 0.7×	71 1.4×	26 0.9×	2 0.7×	36	433
Grace Huiqi Wang Singapore	12	657 1.3×	145 0.8×	41 0.8×	34 1.2×	7 2.3×	26	665

Countries citing papers authored by Guangle Zhou

Since Specialization

Citations

This map shows the geographic impact of Guangle Zhou's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Guangle Zhou with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Guangle Zhou more than expected).

Fields of papers citing papers by Guangle Zhou

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Guangle Zhou. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Guangle Zhou. The network helps show where Guangle Zhou may publish in the future.

Co-authorship network of co-authors of Guangle Zhou

This figure shows the co-authorship network connecting the top 25 collaborators of Guangle Zhou. A scholar is included among the top collaborators of Guangle Zhou based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Guangle Zhou. Guangle Zhou is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

11 of 11 papers shown

1.

Jiang, Zhengping, Yu He, Guangle Zhou, et al.. (2013). Atomistic simulation on gate-recessed InAs/GaSb TFETs and performance benchmark. 77. 145–146. 2 indexed citations

2.

Zhou, Guangle, Yeqing Lu, Rui Li, et al.. (2012). InGaAs/InP Tunnel FETs With a Subthreshold Swing of 93 mV/dec and $I_{\rm ON}/I_{\rm OFF}$ Ratio Near $\hbox{10}^{6}$. IEEE Electron Device Letters. 33(6). 782–784. 75 indexed citations

3.

Lu, Yeqing, Guangle Zhou, Rui Li, et al.. (2012). Performance of AlGaSb/InAs TFETs With Gate Electric Field and Tunneling Direction Aligned. IEEE Electron Device Letters. 33(5). 655–657. 98 indexed citations

4.

Zhou, Guangle, T. Vasen, Meng Qi, et al.. (2012). Novel gate-recessed vertical InAs/GaSb TFETs with record high I<inf>ON</inf> of 180 μA/μm at V<inf>DS</inf> = 0.5 V. 32.6.1–32.6.4. 102 indexed citations

5.

Li, Rui, Yeqing Lu, Guangle Zhou, et al.. (2012). AlGaSb/InAs Tunnel Field-Effect Transistor With On-Current of 78 $\mu\hbox{A}/\mu\hbox{m}$ at 0.5 V. IEEE Electron Device Letters. 33(3). 363–365. 113 indexed citations

6.

Zhang, Qin, Guangle Zhou, Huili Grace Xing, et al.. (2012). Tunnel field-effect transistor heterojunction band alignment by internal photoemission spectroscopy. Applied Physics Letters. 100(10). 12 indexed citations

7.

Seabaugh, Alan, Soo Doo Chae, Patrick Fay, et al.. (2011). III-V Tunnel Field-Effect Transistors. ECS Meeting Abstracts. MA2011-02(32). 2130–2130. 1 indexed citations

8.

Zhou, Guangle, Yeqing Lu, Rui Li, et al.. (2011). Vertical InGaAs/InP Tunnel FETs With Tunneling Normal to the Gate. IEEE Electron Device Letters. 32(11). 1516–1518. 56 indexed citations

9.

Zhou, Guangle, Yeqing Lu, Wan-Sik Hwang, et al.. (2011). Self-aligned InAs/Al<inf>0.45</inf>Ga<inf>0.55</inf>Sb vertical tunnel FETs. 205–206. 15 indexed citations

10.

Seabaugh, Alan, Soo Doo Chae, Patrick Fay, et al.. (2011). (Invited) III-V Tunnel Field-Effect Transistors. ECS Transactions. 41(7). 227–229. 2 indexed citations

11.

Li, Rui, Yeqing Lu, Soo Doo Chae, et al.. (2011). InAs/AlGaSb heterojunction tunnel field‐effect transistor with tunnelling in‐line with the gate field. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 9(2). 389–392. 35 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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