Min-Feng Hung

468 total citations
33 papers, 364 citations indexed

About

Min-Feng Hung is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Materials Chemistry. According to data from OpenAlex, Min-Feng Hung has authored 33 papers receiving a total of 364 indexed citations (citations by other indexed papers that have themselves been cited), including 33 papers in Electrical and Electronic Engineering, 9 papers in Biomedical Engineering and 9 papers in Materials Chemistry. Recurrent topics in Min-Feng Hung's work include Semiconductor materials and devices (30 papers), Advancements in Semiconductor Devices and Circuit Design (20 papers) and Thin-Film Transistor Technologies (13 papers). Min-Feng Hung is often cited by papers focused on Semiconductor materials and devices (30 papers), Advancements in Semiconductor Devices and Circuit Design (20 papers) and Thin-Film Transistor Technologies (13 papers). Min-Feng Hung collaborates with scholars based in Taiwan. Min-Feng Hung's co-authors include Yung‐Chun Wu, Yi‐Ruei Jhan, Kuei‐Shu Chang‐Liao, Jiun‐Jye Chang, Kuancheng Liu, Yao‐Jen Lee, Guo‐Wei Huang, Hang-Ting Lue, Tzu‐Hsuan Hsu and Chun‐Yen Chang and has published in prestigious journals such as Applied Physics Letters, Journal of The Electrochemical Society and IEEE Transactions on Electron Devices.

In The Last Decade

Min-Feng Hung

30 papers receiving 352 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Min-Feng Hung Taiwan 13 353 69 66 23 16 33 364
Mark Jacunski United States 6 413 1.2× 48 0.7× 99 1.5× 27 1.2× 17 1.1× 16 435
Hoon Jeong South Korea 12 345 1.0× 49 0.7× 143 2.2× 46 2.0× 19 1.2× 24 370
Xinlv Duan China 12 239 0.7× 29 0.4× 77 1.2× 17 0.7× 9 0.6× 27 247
Tatsuya Onuki Japan 9 342 1.0× 30 0.4× 137 2.1× 46 2.0× 8 0.5× 34 355
Chen-Feng Hsu Taiwan 8 188 0.5× 43 0.6× 181 2.7× 16 0.7× 34 2.1× 15 262
Bo Xiang United States 10 430 1.2× 21 0.3× 183 2.8× 70 3.0× 35 2.2× 31 440
Narain Arora Germany 8 566 1.6× 82 1.2× 39 0.6× 5 0.2× 41 2.6× 15 579
Véronique Sousa France 8 181 0.5× 37 0.5× 196 3.0× 48 2.1× 16 1.0× 12 224
Ruqi Han China 10 311 0.9× 40 0.6× 67 1.0× 15 0.7× 71 4.4× 45 327

Countries citing papers authored by Min-Feng Hung

Since Specialization
Citations

This map shows the geographic impact of Min-Feng Hung's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Min-Feng Hung with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Min-Feng Hung more than expected).

Fields of papers citing papers by Min-Feng Hung

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Min-Feng Hung. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Min-Feng Hung. The network helps show where Min-Feng Hung may publish in the future.

Co-authorship network of co-authors of Min-Feng Hung

This figure shows the co-authorship network connecting the top 25 collaborators of Min-Feng Hung. A scholar is included among the top collaborators of Min-Feng Hung based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Min-Feng Hung. Min-Feng Hung is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Lue, Hang-Ting, Tzu‐Hsuan Hsu, Wei-Chen Chen, et al.. (2020). 3D AND: A 3D Stackable Flash Memory Architecture to Realize High-Density and Fast-Read 3D NOR Flash and Storage-Class Memory. 6.4.1–6.4.4. 16 indexed citations
2.
3.
Lue, Hang-Ting, Pei-Ying Du, Wei-Chen Chen, et al.. (2019). A Novel Double-Density Hemi-Cylindrical (HC) Structure to Produce More than Double Memory Density Enhancement for 3D NAND Flash. 28.2.1–28.2.4. 12 indexed citations
4.
Yang, Zusing, Min-Feng Hung, Sheng‐Yuan Chang, et al.. (2017). Reduction of wafer arcing during high aspect ratio etching. 421–425. 3 indexed citations
5.
6.
Jhan, Yi‐Ruei, et al.. (2014). High Performance of Fin-Shaped Tunnel Field-Effect Transistor SONOS Nonvolatile Memory With All Programming Mechanisms in Single Device. IEEE Transactions on Electron Devices. 61(7). 2364–2370. 21 indexed citations
7.
Wu, Yung‐Chun, et al.. (2014). Characterizing the Electrical Properties of a Novel Junctionless Poly-Si Ultrathin-Body Field-Effect Transistor Using a Trench Structure. IEEE Electron Device Letters. 36(2). 150–152. 24 indexed citations
8.
Wu, Yung‐Chun, et al.. (2013). Fabrication, characterization and simulation of Ω-gate twin poly-Si FinFET nonvolatile memory. Nanoscale Research Letters. 8(1). 331–331. 16 indexed citations
9.
Jhan, Yi‐Ruei, Yung‐Chun Wu, & Min-Feng Hung. (2013). Performance Enhancement of Nanowire Tunnel Field-Effect Transistor With Asymmetry-Gate Based on Different Screening Length. IEEE Electron Device Letters. 34(12). 1482–1484. 29 indexed citations
10.
Chang, Chun‐Yen, et al.. (2013). A 2-bit/Cell Gate-All-Around Flash Memory of Self-Assembled Silicon Nanocrystals. Japanese Journal of Applied Physics. 52(2R). 21302–21302. 2 indexed citations
11.
Hung, Min-Feng, et al.. (2012). 2-bit operation based on modulated Fowler-Nordheim tunneling in charge-trapping flash memory cell. Applied Physics Letters. 100(5). 5 indexed citations
12.
Hung, Min-Feng, et al.. (2012). Polycrystalline-Si TFT TANOS Flash Memory Cell With Si Nanocrystals for High Program/Erase Speed and Good Retention. IEEE Electron Device Letters. 33(5). 649–651. 3 indexed citations
13.
Wu, Yung‐Chun, et al.. (2012). Low-Frequency Noise in SONOS-TFT With a Trigate Nanowire Structure Under Program/Erase Operation. IEEE Electron Device Letters. 33(9). 1276–1278. 7 indexed citations
14.
Hung, Min-Feng, Yung‐Chun Wu, Jiun‐Jye Chang, & Kuei‐Shu Chang‐Liao. (2012). Twin Thin-Film Transistor Nonvolatile Memory With an Indium–Gallium–Zinc–Oxide Floating Gate. IEEE Electron Device Letters. 34(1). 75–77. 35 indexed citations
15.
Hung, Min-Feng, et al.. (2011). Fabrication and Characterization of Twin Poly-Si Thin Film Transistors EEPROM with a Nitride Charge Trapping Layer. Journal of Nanoscience and Nanotechnology. 11(12). 10419–10423.
16.
Chang, Jiun‐Jye, Kuei‐Shu Chang‐Liao, Tien‐Ko Wang, et al.. (2011). Electrical Degradation and Recovery of Low-Temperature Polycrystalline Silicon Thin-Film Transistors in Polycrystalline Silicon Plasma Process. IEEE Transactions on Electron Devices. 58(8). 2448–2455. 1 indexed citations
17.
18.
Wu, Yung‐Chun, et al.. (2010). Poly-Si Nanowire Nonvolatile Memory With Nanocrystal Indium–Gallium–Zinc–Oxide Charge-Trapping Layer. IEEE Electron Device Letters. 31(12). 1407–1409. 12 indexed citations
19.
20.
Wu, Yung‐Chun, et al.. (2008). Novel Twin Poly-Si Thin-Film Transistors EEPROM With Trigate Nanowire Structure. IEEE Electron Device Letters. 29(11). 1226–1228. 13 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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