F. Van de Wiele

60 papers receiving 669 citations

Peers

F. Van de Wiele
Comparison fields: 5 of 47
  • Electrical and Electronic Engineering 672
  • Atomic and Molecular Physics, and Optics 123
  • Biomedical Engineering 72
  • Materials Chemistry 69
  • Electronic, Optical and Magnetic Materials 16
Replace H. Schäfer with:
H. Schäfer Germany
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A.T. Wu United States
Tai Satô Japan
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Countries citing papers authored by F. Van de Wiele

Since Specialization
Citations

This map shows the geographic impact of F. Van de Wiele's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F. Van de Wiele with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F. Van de Wiele more than expected).

Fields of papers citing papers by F. Van de Wiele

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F. Van de Wiele. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F. Van de Wiele. The network helps show where F. Van de Wiele may publish in the future.

Co-authorship network of co-authors of F. Van de Wiele

This figure shows the co-authorship network connecting the top 25 collaborators of F. Van de Wiele. A scholar is included among the top collaborators of F. Van de Wiele based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with F. Van de Wiele. F. Van de Wiele is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
#WorkIndexed citations
1
Fabrication, characterization and self-consistent simulation of SOI nano flash memory device
3
2
Comparison of Self-Heating Effects in SOI and GAA Devices
1
3
High-Temperature Gate Capacitances of Thin-Film SOI MOSFETs
1
4
Weak inversion models for nMOS gate-all-around (GAA) devices
1
5
Intrinsic gate capacitances of SOI MOSFETs: measurement, modelling, floating substrate effects
1
6 13
7
High efficiency interdigitated back contact silicon solar cells
9
8
A New Isolation Process for VLSI Devices
1
9
Optimized Interdigitated Back Contact (IBC) solar cell for high concentrated sunlight
2
10 9
11 7
12
Design methodologies for VLSI circuits
1
13 16
14 6
15 6
16
Process and device modeling for integrated circuit design : [proceedings of the NATO Advanced Study Institute on Process and device modeling for integrated circuit design, Louvain-la-Neuve, Belgium, July 19-29, 1977]
3
17
Solid state imaging : [proceedings of the NATO Advanced Study Institute on Solid State Imaging, held in Louvain-la-Neuve, Belgium, September 3-12, 1975]
3
18 1
19 6
20 6

About F. Van de Wiele

F. Van de Wiele is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics, having authored 67 papers that have together received 710 indexed citations. Recurring topics across this work include Advancements in Semiconductor Devices and Circuit Design (37 papers), Semiconductor materials and devices (36 papers) and Silicon Carbide Semiconductor Technologies (18 papers). The work is most often cited by research in Electrical and Electronic Engineering (672 citations), Atomic and Molecular Physics, and Optics (123 citations) and Biomedical Engineering (72 citations). F. Van de Wiele has collaborated with scholars based in Belgium, Spain and United States. Frequent co-authors include Denis Flandre, A. Terao, P. Francis, J.-P. Colinge, Michael White, E. Lora‐Tamayo, Enok Palm, Pierre Verlinden, R. Van Overstraeten and P.G.A. Jespers. Their work appears in journals such as Journal of Applied Physics, Journal of The Electrochemical Society and IEEE Transactions on Electron Devices.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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