Aditi Agarwal

733 citations

46 papers · 551 indexed · h-index 13

Co-authors: B. Jayant Baliga Kijeong Han Ajit Kanale Wei Wang Subhashish Bhattacharya Payam Norouzzadeh Yasaman Sargolzaeiaval Viswanath Padmanabhan Ramesh
Topics: Silicon Carbide Semiconductor Technologies (35 papers)Multilevel Inverters and Converters (18 papers)Semiconductor materials and devices (16 papers)
Cited by: Electrical and Electronic Engineering Materials Chemistry Computer Networks and Communications
Journals: SHILAP Revista de lepidopterologíaIEEE Transactions on Power Electronics IEEE Transactions on Electron Devices
Partner nations: United States India Canada

In The Last Decade

Aditi Agarwal

44 papers receiving 526 citations

Peers

Countries citing papers authored by Aditi Agarwal

Since Specialization

Citations

This map shows the geographic impact of Aditi Agarwal's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Aditi Agarwal with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Aditi Agarwal more than expected).

Fields of papers citing papers by Aditi Agarwal

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Aditi Agarwal. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Aditi Agarwal. The network helps show where Aditi Agarwal may publish in the future.

Co-authorship network of co-authors of Aditi Agarwal

This figure shows the co-authorship network connecting the top 25 collaborators of Aditi Agarwal. A scholar is included among the top collaborators of Aditi Agarwal based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Aditi Agarwal. Aditi Agarwal is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work	Indexed citations
1	Implant Straggle Impact on 1.2 kV SiC Power MOSFET Static and Dynamic Parameters 2022 ·IEEE Journal of the Electron Devices Society ·Aditi Agarwal,B. Jayant Baliga	8
2	Monolithic Reverse Blocking 1.2 kV 4H-SiC Power Transistor: A Novel, Single-Chip, Three-Terminal Device for Current Source Inverter Applications 2022 ·IEEE Transactions on Power Electronics ·Ajit Kanale,Aditi Agarwal,B. Jayant Baliga,Subhashish Bhattacharya	13
3	Design Considerations for Developing 1.2 kV 4H-SiC BiDFET-enabled Power Conversion Systems 2022 ·2022 IEEE Energy Conversion Congress and Exposition (ECCE) ·Ajit Kanale,(unknown),(unknown),Aditi Agarwal,B. Jayant Baliga,Subhashish Bhattacharya,Douglas C. Hopkins	3
4	3.3 kV 4H-SiC Planar-Gate MOSFETs Manufactured using Gen-5 PRESiCE™ Technology in a 4-inch Wafer Commercial Foundry 2021 ·Aditi Agarwal,B. Jayant Baliga,(unknown),(unknown),(unknown),(unknown)	5
5	Optimized AC/DC Dual Active Bridge Converter using Monolithic SiC Bidirectional FET (BiDFET) for Solar PV Applications 2021 ·OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) ·Suyash Sushilkumar Shah,(unknown),Subhashish Bhattacharya,Ajit Kanale,(unknown),(unknown),Aditi Agarwal,B. Jayant Baliga,Douglas C. Hopkins	11
6	Comparison of the Capacitances and Switching Losses of 1.2 kV Common-Source and Common- Drain Bidirectional Switch Topologies 2021 ·OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) ·Ajit Kanale,(unknown),(unknown),Aditi Agarwal,Suyash Sushilkumar Shah,B. Jayant Baliga,Subhashish Bhattacharya,Douglas C. Hopkins	5
7	650-V 4H-SiC Planar Inversion-Channel Power JBSFETs With 55-nm Gate Oxide: Relative Performance of Three Cell Types 2021 ·IEEE Transactions on Electron Devices ·Aditi Agarwal,Kijeong Han,B. Jayant Baliga	3
8	Comparison of 2.3-kV 4H-SiC Accumulation-Channel Planar Power MOSFETs Fabricated With Linear, Square, Hexagonal, and Octagonal Cell Topologies 2020 ·IEEE Transactions on Electron Devices ·Aditi Agarwal,Kijeong Han,B. Jayant Baliga	12
9	Switching and Short-Circuit Performance of 27 nm Gate Oxide, 650 V SiC Planar-Gate MOSFETs with 10 to 15 V Gate Drive Voltage 2020 ·Aditi Agarwal,Ajit Kanale,Kijeong Han,B. Jayant Baliga	8
10	Efficient Load balancing to serve Heterogeneous Requests in Clustered Systems using Kubernetes 2020 ·Amit Dua,(unknown),Aditi Agarwal,Neeraj Kumar	4
11	2.3 kV 4H-SiC Accumulation-channel JBSFETs: Experimental Comparison of Linear, Hexagonal and Octagonal Cell Topologies 2020 ·Aditi Agarwal,Kijeong Han,B. Jayant Baliga	6
12	Experimental Study of Switching and Short-Circuit Performance of 1.2 kV 4H-SiC Accumulation and Inversion Channel Power MOSFETs 2020 ·Materials science forum ·Aditi Agarwal,Ajit Kanale,(unknown),B. Jayant Baliga,Subhashish Bhattacharya	4
13	Impact of Gate Oxide Thickness on Switching and Short Circuit Performance of 1200 V 4H-SiC Inversion-channel MOSFETs 2019 ·Aditi Agarwal,Ajit Kanale,Kijeong Han,B. Jayant Baliga,Subhashish Bhattacharya	13
14	Impact of Gate Oxide Thickness on Electrical Characteristics of 1200 V 4H-SiC Planar-Gate Power MOSFETs 2019 ·Aditi Agarwal,Kijeong Han,B. Jayant Baliga	6
15	Analysis of 1.2 kV 4H-SiC Trench-Gate MOSFETs with Thick Trench Bottom Oxide 2018 ·Aditi Agarwal,Kijeong Han,B. Jayant Baliga	21
16	Thermoelectric silicides: A review 2017 ·Japanese Journal of Applied Physics ·Amin Nozariasbmarz,Aditi Agarwal,(unknown),(unknown),Jie Liu,Runze Liu,Abhishek Malhotra,Payam Norouzzadeh,Mehmet C. Öztürk,Viswanath Padmanabhan Ramesh,Yasaman Sargolzaeiaval,(unknown),Daryoosh Vashaee	144
17	Analyzing and shrinking network inaccessibility in ZIGBEE wireless communication by comparing it with TDMA-MAC protocol 2016 ·(unknown),(unknown),(unknown),Aditi Agarwal	2
18	Statistical analysis of the impact of routing in MANETs based on real-time measurements 2006 ·Aditi Agarwal,Wenye Wang	3
19	Dynamic Admission and Congestion Control for Real-time Traffic in IEEE 802.11e Wireless LANs 2006 ·Yi Liu,(unknown),Chadi Assi,Aditi Agarwal	7
20	Conventional poly-Si gate MOS-transistors with a novel, ultra-thin Hf-oxide layer 2004 ·(unknown),(unknown),Chadwin D. Young,K. Matthews,Joel Barnett,Brendan Foran,Aditi Agarwal,George Brown,G. Bersuker,P. Zeitzoff,Mark Gardner,R.W. Murto,(unknown),(unknown),Shreyas S. Kher,Howard R. Huff	18

About Aditi Agarwal

Aditi Agarwal is a scholar working on Electrical and Electronic Engineering, Computer Networks and Communications and Atomic and Molecular Physics, and Optics, having authored 46 papers that have together received 551 indexed citations. Recurring topics across this work include Silicon Carbide Semiconductor Technologies (35 papers), Multilevel Inverters and Converters (18 papers) and Semiconductor materials and devices (16 papers). The work is most often cited by research in Electrical and Electronic Engineering (419 citations), Materials Chemistry (132 citations) and Computer Networks and Communications (64 citations). Aditi Agarwal has collaborated with scholars based in United States, India and Canada. Frequent co-authors include B. Jayant Baliga, Kijeong Han, Ajit Kanale, Wei Wang, Subhashish Bhattacharya, Payam Norouzzadeh, Yasaman Sargolzaeiaval, Viswanath Padmanabhan Ramesh, Douglas C. Hopkins and Daryoosh Vashaee. Their work appears in journals such as SHILAP Revista de lepidopterología, IEEE Transactions on Power Electronics and IEEE Transactions on Electron Devices.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact