S. Jeppesen

655 total citations
24 papers, 542 citations indexed

About

S. Jeppesen is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Condensed Matter Physics. According to data from OpenAlex, S. Jeppesen has authored 24 papers receiving a total of 542 indexed citations (citations by other indexed papers that have themselves been cited), including 20 papers in Atomic and Molecular Physics, and Optics, 17 papers in Electrical and Electronic Engineering and 6 papers in Condensed Matter Physics. Recurrent topics in S. Jeppesen's work include Semiconductor Quantum Structures and Devices (17 papers), Advancements in Semiconductor Devices and Circuit Design (6 papers) and Advanced Semiconductor Detectors and Materials (6 papers). S. Jeppesen is often cited by papers focused on Semiconductor Quantum Structures and Devices (17 papers), Advancements in Semiconductor Devices and Circuit Design (6 papers) and Advanced Semiconductor Detectors and Materials (6 papers). S. Jeppesen collaborates with scholars based in Sweden, China and Japan. S. Jeppesen's co-authors include Lars Samuelson, Ann Persson, Mark S. Miller, Mats Björk, J. Jönsson, Knut Deppert, Gert Paulsson, Ivan Maximov, L. E. Fröberg and P. H. Schmidt and has published in prestigious journals such as Nano Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

S. Jeppesen

24 papers receiving 526 citations

Peers

S. Jeppesen
S. A. Chaparro United States
P. B. Joyce United Kingdom
T. J. Krzyzewski United Kingdom
J. Oshinowo Germany
Hanyou Chu United States
A. Konkar United States
S. Jeppesen
Citations per year, relative to S. Jeppesen S. Jeppesen (= 1×) peers A. I. Nikiforov

Countries citing papers authored by S. Jeppesen

Since Specialization
Citations

This map shows the geographic impact of S. Jeppesen's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Jeppesen with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Jeppesen more than expected).

Fields of papers citing papers by S. Jeppesen

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Jeppesen. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Jeppesen. The network helps show where S. Jeppesen may publish in the future.

Co-authorship network of co-authors of S. Jeppesen

This figure shows the co-authorship network connecting the top 25 collaborators of S. Jeppesen. A scholar is included among the top collaborators of S. Jeppesen based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. Jeppesen. S. Jeppesen is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Kamata, Hiroshi, Russell Deacon, Sadashige Matsuo, et al.. (2018). Anomalous modulation of Josephson radiation in nanowire-based Josephson junctions. Physical review. B.. 98(4). 11 indexed citations
2.
Baba, Shoji A., Sadashige Matsuo, Hiroshi Kamata, et al.. (2017). Gate tunable parallel double quantum dots in InAs double-nanowire devices. Applied Physics Letters. 111(23). 9 indexed citations
3.
Jeppesen, S., et al.. (2013). Control and understanding of kink formation in InAs–InP heterostructure nanowires. Nanotechnology. 24(34). 345601–345601. 19 indexed citations
4.
Persson, Ann, L. E. Fröberg, S. Jeppesen, Mats Björk, & Lars Samuelson. (2007). Surface diffusion effects on growth of nanowires by chemical beam epitaxy. Journal of Applied Physics. 101(3). 78 indexed citations
5.
Persson, Ann, Mats Björk, S. Jeppesen, et al.. (2006). InAs1-xPx Nanowires for Device Engineering. Nano Letters. 6(3). 403–407. 78 indexed citations
6.
Dahlin, Andreas P., et al.. (2005). Phospholipid vesicle adsorption measuredin situwith resonating cantilevers in a liquid cell. Nanotechnology. 16(9). 1512–1516. 5 indexed citations
7.
Persson, Ann, B. Jonas Ohlsson, S. Jeppesen, & Lars Samuelson. (2004). Growth mechanisms for GaAs nanowires grown in CBE. Journal of Crystal Growth. 272(1-4). 167–174. 47 indexed citations
8.
Pietzonka, Ines, et al.. (2002). Unimodal dome-shaped island population of Ge/Si by step-wise growth in UHV-CVD. Physica E Low-dimensional Systems and Nanostructures. 13(2-4). 1013–1017. 13 indexed citations
9.
Panev, N., et al.. (2002). Spectroscopic studies of random telegraph noise in InAs quantum dots in GaAs. Journal of Applied Physics. 92(12). 7086–7089. 10 indexed citations
10.
Persson, Martin, N. Panev, L. Landín, S. Jeppesen, & Mats‐Erik Pistol. (2001). Relaxation pathways in InAs/GaAs quantum dots. Physical review. B, Condensed matter. 64(7). 4 indexed citations
11.
Miller, Mark S., et al.. (1998). Effects of Ga and As desorption on the chemical beam epitaxy growth of (001) GaAs as measured by reflection high energy electron diffraction. Journal of Applied Physics. 83(8). 4513–4517. 1 indexed citations
12.
Jeppesen, S., et al.. (1998). InAs quantum dots in GaAs holes: island number dependence on hole diameter and conduction-band coupling estimates. Superlattices and Microstructures. 23(6). 1347–1352. 11 indexed citations
13.
Miller, Mark S., et al.. (1996). Stacking InAs islands and GaAs layers: Strongly modulated one-dimensional electronic systems. Journal of Applied Physics. 80(6). 3360–3364. 40 indexed citations
14.
Jeppesen, S., et al.. (1996). Assembling strained InAs islands on patterned GaAs substrates with chemical beam epitaxy. Applied Physics Letters. 68(16). 2228–2230. 79 indexed citations
15.
Jeppesen, S., et al.. (1996). A comparison of RHEED reconstruction phases on (100) InAs, GaAs and InP. Journal of Crystal Growth. 164(1-4). 66–70. 20 indexed citations
16.
Samuelson, Lars, Knut Deppert, S. Jeppesen, et al.. (1991). Reflectance-difference study of surface chemistry in MOVPE growth. Journal of Crystal Growth. 107(1-4). 68–72. 23 indexed citations
17.
Paulsson, Gert, Knut Deppert, S. Jeppesen, et al.. (1991). Reflectance-difference probing of surface kinetics of (001) GaAs during vacuum chemical epitaxy. Journal of Crystal Growth. 111(1-4). 115–119. 15 indexed citations
18.
Jönsson, J., Knut Deppert, S. Jeppesen, et al.. (1990). Optical detection of growth oscillations in high vacuum metalorganic vapor phase epitaxy. Applied Physics Letters. 56(24). 2414–2416. 28 indexed citations
19.
Paulsson, Gert, Knut Deppert, S. Jeppesen, et al.. (1990). Reflectance-difference detection of growth oscillations. Journal of Crystal Growth. 105(1-4). 312–315. 21 indexed citations
20.
Schmidt, P. H., Knut Deppert, S. Jeppesen, et al.. (1990). A compact VCE growth system for in situ studies of epitaxy. Journal of Crystal Growth. 105(1-4). 306–311. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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