M. W. Cho

422 total citations
25 papers, 358 citations indexed

About

M. W. Cho is a scholar working on Materials Chemistry, Condensed Matter Physics and Electrical and Electronic Engineering. According to data from OpenAlex, M. W. Cho has authored 25 papers receiving a total of 358 indexed citations (citations by other indexed papers that have themselves been cited), including 19 papers in Materials Chemistry, 14 papers in Condensed Matter Physics and 11 papers in Electrical and Electronic Engineering. Recurrent topics in M. W. Cho's work include GaN-based semiconductor devices and materials (14 papers), ZnO doping and properties (14 papers) and Ga2O3 and related materials (9 papers). M. W. Cho is often cited by papers focused on GaN-based semiconductor devices and materials (14 papers), ZnO doping and properties (14 papers) and Ga2O3 and related materials (9 papers). M. W. Cho collaborates with scholars based in Japan, South Korea and United States. M. W. Cho's co-authors include T. Yao, Takashi Hanada, Hiroki Goto, D. C. Oh, Jeong Yong Lee, Soon‐Ku Hong, Jun‐Seok Ha, Jun Hyuk Chang, Jun‐Ho Jang and Hisao Makino and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Physical Review B.

In The Last Decade

M. W. Cho

25 papers receiving 348 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
M. W. Cho Japan 9 208 205 176 142 108 25 358
Yong‐Tae Moon South Korea 12 206 1.0× 313 1.5× 154 0.9× 158 1.1× 110 1.0× 16 399
Chinkyo Kim South Korea 10 255 1.2× 271 1.3× 120 0.7× 152 1.1× 89 0.8× 49 408
R. C. Tu Taiwan 11 222 1.1× 312 1.5× 168 1.0× 142 1.0× 179 1.7× 30 424
V. Leca Romania 12 182 0.9× 218 1.1× 86 0.5× 180 1.3× 65 0.6× 32 399
C. H. Qiu United States 8 235 1.1× 380 1.9× 212 1.2× 245 1.7× 125 1.2× 12 483
In-Hwan Lee South Korea 14 238 1.1× 234 1.1× 153 0.9× 164 1.2× 71 0.7× 32 392
Hongbo Yu Türkiye 14 195 0.9× 360 1.8× 141 0.8× 233 1.6× 113 1.0× 29 423
C. J. Pan Taiwan 13 255 1.2× 293 1.4× 196 1.1× 220 1.5× 62 0.6× 26 428
A. Ougazzaden France 9 161 0.8× 218 1.1× 127 0.7× 125 0.9× 100 0.9× 18 326
J. Woodward United States 12 157 0.8× 166 0.8× 182 1.0× 132 0.9× 129 1.2× 35 376

Countries citing papers authored by M. W. Cho

Since Specialization
Citations

This map shows the geographic impact of M. W. Cho's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. W. Cho with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. W. Cho more than expected).

Fields of papers citing papers by M. W. Cho

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. W. Cho. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. W. Cho. The network helps show where M. W. Cho may publish in the future.

Co-authorship network of co-authors of M. W. Cho

This figure shows the co-authorship network connecting the top 25 collaborators of M. W. Cho. A scholar is included among the top collaborators of M. W. Cho based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. W. Cho. M. W. Cho is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Ha, Jun‐Seok, HJ Lee, Katsushi Fujii, et al.. (2009). Fabrication of free‐standing GaN substrate using evaporable buffer layer (EBL). Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 6(S2). 5 indexed citations
2.
Park, J.S., Sung‐Kwon Hong, Il Im, et al.. (2008). Growth of high-quality ZnO films on Al2O3 (0001) by plasma-assisted molecular beam epitaxy. Journal of Crystal Growth. 311(7). 2163–2166. 9 indexed citations
3.
Goto, Hiroki, Jeong Yong Lee, HJ Lee, et al.. (2008). Chemical lift‐off of GaN epitaxial films grown on c‐sapphire substrates with CrN buffer layers. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 5(6). 1659–1661. 20 indexed citations
4.
Goto, Hiroki, Tsutomu Minegishi, Jun‐Seok Ha, et al.. (2007). Characterization of free‐standing GaN substrates prepared by self lift‐off. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 4(7). 2617–2620. 1 indexed citations
5.
Lee, Jeong Yong, et al.. (2007). Free standing GaN layers with GaN nanorod buffer layer. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 4(7). 2268–2271. 1 indexed citations
6.
Hanada, Takashi, D. C. Oh, Tsutomu Minegishi, et al.. (2007). Lattice relaxation mechanism of ZnO thin films grown on c-Al2O3 substrates by plasma-assisted molecular-beam epitaxy. Applied Physics Letters. 91(23). 42 indexed citations
7.
Minegishi, Tsutomu, Takashi Hanada, Hiroshi Suzuki, et al.. (2007). Structural characterization of MgO/c‐Al2O3 interfaces. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 4(5). 1715–1718. 2 indexed citations
8.
Lee, HJ, Jeong Yong Lee, Hiroki Goto, et al.. (2007). Structural investigation of nitrided c-sapphire substrate by grazing incidence x-ray diffraction and transmission electron microscopy. Applied Physics Letters. 91(20). 7 indexed citations
9.
Makino, Hisao, Keisuke Kobayashi, E. Ikenaga, et al.. (2006). Observation of a filled electronic state in the conduction band of InN. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 3(6). 1846–1849. 6 indexed citations
10.
Oh, D. C., Hiroki Goto, Jun‐Seok Ha, et al.. (2006). Origin of forward leakage current in GaN-based light-emitting devices. Applied Physics Letters. 89(13). 143 indexed citations
11.
Cho, M. W., et al.. (2006). Control of crystal polarity in oxide and nitride semiconductors by interface engineering. Journal of Electroceramics. 17(2-4). 255–261. 8 indexed citations
12.
Oh, D. C., Agus Setiawan, Han Jong Ko, et al.. (2004). Characterization of N-doped ZnO layers grown on (0 0 0 1) GaN/Al2O3 substrates by molecular beam epitaxy. Current Applied Physics. 4(6). 625–629. 12 indexed citations
13.
Makino, Hisao, Keisuke Kobayashi, Y. Takata, et al.. (2004). Hybridization of Cr3dN2pGa4sin the wide band-gap diluted magnetic semiconductorGa1xCrxN. Physical Review B. 70(16). 17 indexed citations
14.
Makino, Hisao, A. Ino, H. Namatame, et al.. (2004). Electronic structure of Ga1−Cr N investigated by photoemission spectroscopy. Current Applied Physics. 4(6). 603–606. 6 indexed citations
15.
Makino, Hisao, M. W. Cho, Jun Hyuk Chang, et al.. (2002). Band alignment of ZnSe/Zn0.75Mg15Be10Se heterostructures. Journal of Applied Physics. 91(9). 5811–5814. 3 indexed citations
16.
Makino, Hisao, M. W. Cho, Jun Hyuk Chang, et al.. (2001). Composition dependence of the energy gap of Zn1−x−yMgxBeySe quaternary alloys nearly lattice matched to GaAs. Applied Physics Letters. 79(25). 4168–4170. 9 indexed citations
17.
Chang, Jun Hyuk, M. W. Cho, H. Wenisch, et al.. (2000). Structural and optical properties of high-quality ZnTe homoepitaxial layers. Applied Physics Letters. 77(9). 1256–1258. 27 indexed citations
18.
Cho, M. W., et al.. (1998). ZnSe heteroepitaxy on GaAs (110) substrate. Journal of Electronic Materials. 27(2). 85–88. 1 indexed citations
19.
Cho, M. W., Kazuo Morikawa, Kenta Arai, et al.. (1997). Surface treatment of znse substrate and homoepitaxy of znse. Journal of Electronic Materials. 26(5). 423–428. 7 indexed citations
20.
Yao, T., Fang Lu, M. W. Cho, et al.. (1997). Heterovalent ZnSe/GaAs Interfaces. physica status solidi (b). 202(2). 657–668. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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