R. T. Carline

591 total citations
40 papers, 459 citations indexed

About

R. T. Carline is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, R. T. Carline has authored 40 papers receiving a total of 459 indexed citations (citations by other indexed papers that have themselves been cited), including 33 papers in Electrical and Electronic Engineering, 27 papers in Atomic and Molecular Physics, and Optics and 19 papers in Materials Chemistry. Recurrent topics in R. T. Carline's work include Semiconductor Quantum Structures and Devices (19 papers), Silicon Nanostructures and Photoluminescence (18 papers) and Semiconductor materials and interfaces (17 papers). R. T. Carline is often cited by papers focused on Semiconductor Quantum Structures and Devices (19 papers), Silicon Nanostructures and Photoluminescence (18 papers) and Semiconductor materials and interfaces (17 papers). R. T. Carline collaborates with scholars based in United Kingdom, France and Singapore. R. T. Carline's co-authors include Christopher Pickering, David J. Robbins, Wai Yie Leong, C. Pickering, A. G. Cullis, A. D. Pitt, S. J. Barnett, P.J. Walker, B. K. Tanner and D. A. Allwood and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Optics Letters.

In The Last Decade

R. T. Carline

40 papers receiving 406 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
R. T. Carline United Kingdom	12	367	275	150	59	52	40	459
D. A. Vinokurov Russia	16	663 1.8×	624 2.3×	94 0.6×	17 0.3×	90 1.7×	73	799
C. E. Norman United Kingdom	11	240 0.7×	283 1.0×	100 0.7×	11 0.2×	86 1.7×	36	400
H. Kanbe Japan	17	597 1.6×	493 1.8×	83 0.6×	18 0.3×	71 1.4×	52	710
A S Nasibov Russia	11	474 1.3×	290 1.1×	231 1.5×	32 0.5×	55 1.1×	87	552
H. S. Djie United States	17	716 2.0×	678 2.5×	161 1.1×	28 0.5×	77 1.5×	74	807
Qiugui Zhou United States	15	563 1.5×	308 1.1×	45 0.3×	12 0.2×	59 1.1×	46	656
T. Kaneda Japan	16	713 1.9×	490 1.8×	62 0.4×	27 0.5×	68 1.3×	50	782
Patrik Rath Germany	10	271 0.7×	350 1.3×	254 1.7×	17 0.3×	120 2.3×	14	527
T. Torikai Japan	17	713 1.9×	443 1.6×	25 0.2×	19 0.3×	37 0.7×	69	749
C. Zinoni Switzerland	12	461 1.3×	514 1.9×	128 0.9×	4 0.1×	103 2.0×	20	591

Countries citing papers authored by R. T. Carline

Since Specialization

Citations

This map shows the geographic impact of R. T. Carline's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. T. Carline with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. T. Carline more than expected).

Fields of papers citing papers by R. T. Carline

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. T. Carline. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. T. Carline. The network helps show where R. T. Carline may publish in the future.

Co-authorship network of co-authors of R. T. Carline

This figure shows the co-authorship network connecting the top 25 collaborators of R. T. Carline. A scholar is included among the top collaborators of R. T. Carline based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R. T. Carline. R. T. Carline is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Carline, R. T., et al.. (2002). A vertical cavity longwave infrared SiGe/Si photodetector using a buried silicide mirror. 891–894. 1 indexed citations

Hiskett, Philip A., et al.. (2002). Enhancement of the infrared detection efficiency of silicon photon-counting avalanche photodiodes by use of silicon germanium absorbing layers. Optics Letters. 27(4). 219–219. 44 indexed citations

Gardiner, Derek J., et al.. (2001). Structural variations in polysilicon, associated with deposition temperature and degree of anneal. Journal of Materials Science. 36(1). 207–212. 5 indexed citations

Allwood, D. A., R. T. Carline, N. J. Mason, et al.. (2000). Characterization of oxide layers on GaAs substrates. Thin Solid Films. 364(1-2). 33–39. 55 indexed citations

Robbins, David J., et al.. (2000). In situ optical monitoring for SiGe epitaxy. Journal of Crystal Growth. 209(2-3). 290–296. 2 indexed citations

Ward, Mike, et al.. (1998). <title>Polysilicon for everything?</title>. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 3514. 298–306. 1 indexed citations

Carline, R. T., et al.. (1998). Rapid non-invasive temperature measurement of complex Si structures using. 310–314. 1 indexed citations

Hall, David J. & R. T. Carline. (1998). Observation of graded interfaces in strained Si/Si 1−x Ge x layers (0.17 < x < 0.23) using photoreflectance. Applied Surface Science. 125(1). 1–5. 1 indexed citations

Carline, R. T., et al.. (1997). Controlled growth of long-wavelength SiGe/Si multiple quantum well resonant-cavity photodetectors. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 3007. 81–81. 4 indexed citations

10.

Pickering, Christopher, et al.. (1995). Real-time spectroscopic ellipsometry monitoring of Si1−xGex/Si epitaxial growth. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 13(3). 740–744. 15 indexed citations

11.

Pickering, C., et al.. (1995). Real-time monitoring of Si1–xGex heteroepitaxial growth using laser light scattering and spectroscopic ellipsometry. physica status solidi (a). 152(1). 95–102. 3 indexed citations

12.

Carline, R. T., T. J. C. Hosea, & David J. Hall. (1995). Photoreflectance of single buried Si1−xGex epilayers (0.12<x<0.24). Journal of Applied Physics. 78(6). 4285–4287. 3 indexed citations

13.

Carline, R. T., Christopher Pickering, T. J. C. Hosea, & David J. Hall. (1995). Photoreflectance spectroscopy of pseudomorphic Si_1−XGe_x(100) structures (x<0·26). Materials Science and Technology. 11(4). 416–420. 2 indexed citations

14.

Carline, R. T., Christopher Pickering, T. J. C. Hosea, & David J. Hall. (1995). Photoreflectance spectroscopy of pseudomorphic Si<SUB>1−X</SUB>Ge<SUB>x</SUB> (100) structures (x<0·26). Materials Science and Technology. 11(4). 416–420. 1 indexed citations

15.

Pickering, C. & R. T. Carline. (1994). Dielectric function spectra of strained and relaxed Si1−xGex alloys (x=0–0.25). Journal of Applied Physics. 75(9). 4642–4647. 39 indexed citations

16.

Pickering, Christopher, R. T. Carline, David J. Robbins, et al.. (1993). Spectroscopic ellipsometry characterization of strained and relaxed Si1−xGex epitaxial layers. Journal of Applied Physics. 73(1). 239–250. 57 indexed citations

17.

Carline, R. T., et al.. (1993). Characterization of Pseudomorphic Si/Si1-xGex Multi-Quantum Well Structures by Spectroscopic Ellipsometry. MRS Proceedings. 326. 1 indexed citations

18.

Pickering, Christopher, et al.. (1993). Spectroscopic ellipsometry characterisatiion of strained Si 1-x Ge x multi quantum wells for optoelectronic applications. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 1985. 414–414. 3 indexed citations

19.

Pickering, C., et al.. (1992). SiGe materials characterized by high resolution Raman spectroscopy and spectroscopic ellipsometry. Thin Solid Films. 222(1-2). 73–77. 6 indexed citations

20.

Carline, R. T. & D.W.E. Allsopp. (1991). A simplified self-consistent model of charge control in quasi-square quantum well HFETs. Semiconductor Science and Technology. 6(12). 1151–1157. 3 indexed citations

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