S. Isozumi

452 total citations
24 papers, 359 citations indexed

About

S. Isozumi is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Condensed Matter Physics. According to data from OpenAlex, S. Isozumi has authored 24 papers receiving a total of 359 indexed citations (citations by other indexed papers that have themselves been cited), including 21 papers in Atomic and Molecular Physics, and Optics, 18 papers in Electrical and Electronic Engineering and 3 papers in Condensed Matter Physics. Recurrent topics in S. Isozumi's work include Semiconductor Quantum Structures and Devices (20 papers), Semiconductor Lasers and Optical Devices (13 papers) and Photonic and Optical Devices (8 papers). S. Isozumi is often cited by papers focused on Semiconductor Quantum Structures and Devices (20 papers), Semiconductor Lasers and Optical Devices (13 papers) and Photonic and Optical Devices (8 papers). S. Isozumi collaborates with scholars based in Japan and United States. S. Isozumi's co-authors include Osamu Ueda, Satoshi Komiya, K. Wakao, Shigenobu Yamakoshi, Tsuyoshi Kotani, T. Tanahashi, K. Nakajima, Akio Yamaguchi, Satoshi Nishiyama and C. Anayama and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

S. Isozumi

24 papers receiving 333 citations

Peers

Countries citing papers authored by S. Isozumi

Since Specialization

Citations

This map shows the geographic impact of S. Isozumi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Isozumi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Isozumi more than expected).

Fields of papers citing papers by S. Isozumi

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Isozumi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Isozumi. The network helps show where S. Isozumi may publish in the future.

Co-authorship network of co-authors of S. Isozumi

This figure shows the co-authorship network connecting the top 25 collaborators of S. Isozumi. A scholar is included among the top collaborators of S. Isozumi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. Isozumi. S. Isozumi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Liquid phase epitaxial growth of Fe-doped semi-insulating InGaAsP lattice matched to InP over the entire composition range 1988 ·Applied Physics Letters ·Makoto Kondō, Mitsuru Sugawara, T. Tanahashi, S. Isozumi, K. Nakajima	6
2	High-efficiency InGaAsP/InP flat-surface buried heterostructure distributed feedback lasers at 1.55 μm 1987 ·Journal of Applied Physics ·K. Wakao, (unknown), Y. Kotaki, T. Kusunoki, H. Sudo, S. Isozumi, Shigenobu Yamakoshi, Hiroshi Ishikawa, H. Imai	10
3	High-power, wide-bandwidth, 1.55 μm-wavelength GaInAsP/InP distributed feedback laser 1987 ·Electronics Letters ·(unknown), (unknown), H. Sudo, T. Tanahashi, T. Kusunoki, S. Isozumi, Hiroshi Ishikawa, H. Imai	6
4	The Acceptor Level of Fe in In_0.49Ga_0.51P 1987 ·Japanese Journal of Applied Physics ·(unknown), S. Isozumi, Mitsuru Sugawara, Kazuo Nakajima	12
5	Distributed feedback laser emitting at 1.3 µm for gigabit communication systems 1987 ·Journal of Lightwave Technology ·H. Ishikawa, H. Soda, K. Wakao, (unknown), (unknown), Y. Kotaki, M. Matsuda, H. Sudo, Shigenobu Yamakoshi, S. Isozumi, H. Imai	20
6	Liquid Phase Epitaxial Growth of Fe-Doped Semi-Insulating Inp and Ternary Alloys 1986 ·MRS Proceedings ·S. Isozumi, T. Tanahashi, Makoto Kondō, Mitsuru Sugawara, A Yamaguchi, K. Nakajima	1
7	Catastrophic degradation of InGaAsP/InGaP double-heterostructure lasers grown on (001) GaAs substrates by liquid-phase epitaxy 1985 ·Journal of Applied Physics ·Osamu Ueda, K. Wakao, Satoshi Komiya, Akio Yamaguchi, S. Isozumi, Itsuo Umebu	29
8	Low-threshold operation of 1.54 μm InGaAsP/InP DFB laser with second-order grating 1985 ·Electronics Letters ·K. Wakao, (unknown), T. Tanahashi, H. Sudo, T. Kusunoki, (unknown), H. Ishikawa, S. Isozumi, Shigenobu Yamakoshi, H. Imai	6
9	HIGH CONTROLLABILITY OF CARRIER CONCENTRATION OF p^--LPE InP BY Mn DOPING 1985 ·MRS Proceedings ·T. Tanahashi, Makoto Kondō, (unknown), Y. Kotaki, S. Isozumi, K. Nakajima	1
10	Defect structures in rapidly degraded InGaAsP/InGaP double-heterostructure lasers 1985 ·Journal of Applied Physics ·Osamu Ueda, K. Wakao, Akio Yamaguchi, S. Isozumi, Satoshi Komiya	21
11	InGaAsP/InGaP buried heterostructure lasers at 810 nm 1984 ·Journal of Applied Physics ·K. Wakao, S. Isozumi, Hiroshi Nishi, (unknown)	1
12	Composition-Modulated Structures in InGaAsP and InGaP Liquid Phase Epitaxial Layers Grown on (001) GaAs Substrates 1984 ·Japanese Journal of Applied Physics ·Osamu Ueda, S. Isozumi, Satoshi Komiya	58
13	Room-temperature cw operation of InGaAsP/InGaP lasers at 727 nm grown on GaAs substrates by liquid phase epitaxy 1984 ·Applied Physics Letters ·K. Wakao, H. Nishi, T. Kusunoki, S. Isozumi, (unknown)	12
14	Low-threshold InGaAsP/InGaP lasers at 810 nm grown on GaAs substrate by LPE 1984 ·Electronics Letters ·K. Wakao, H. Nishi, S. Isozumi, (unknown), T. Kusunoki, Ichiro Ushijima	10
15	TEM Investigation of Dislocation Loops in Undoped InGaAsP and InGaP Layers Grown by Liquid Phase Epitaxy 1984 ·Japanese Journal of Applied Physics ·Osamu Ueda, Satoshi Komiya, S. Isozumi	5
16	Positive feedback model of defect formation in gradually degraded GaAlAs light emitting devices 1983 ·IEEE Transactions on Electron Devices ·Ken‐ichi Kondo, Osamu Ueda, S. Isozumi, Shigenobu Yamakoshi, Kenzo Akita, Takao Kotani	19
17	Tem Observation of defects in InGaAsP and InGaP Crystals on GaAs Substrates Grown by Liquid Phase Epitaxy 1983 ·MRS Proceedings ·Osamu Ueda, S. Isozumi, Satoshi Komiya, T. Kusunoki, Itsuo Umebu	2
18	Defect structure of degraded Ga1−xAlxAs double-heterostructure light-emitting diodes 1979 ·Journal of Applied Physics ·Osamu Ueda, S. Isozumi, Shigenobu Yamakoshi, Tsuyoshi Kotani	30
19	Defect structure of 〈100〉 dark lines in the active region of a rapidly degraded Ga1−xAlxAs LED 1977 ·Journal of Applied Physics ·Osamu Ueda, S. Isozumi, Tsuyoshi Kotani, Toyoshi Yamaoka	19
20	A pulse shape discriminator for an X-ray proportional counter and its application to a coincidence experiment 1971 ·Nuclear Instruments and Methods ·Yasuhito Isozumi, S. Isozumi	14

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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