G. Beister

546 total citations
36 papers, 441 citations indexed

About

G. Beister is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Computational Mechanics. According to data from OpenAlex, G. Beister has authored 36 papers receiving a total of 441 indexed citations (citations by other indexed papers that have themselves been cited), including 35 papers in Electrical and Electronic Engineering, 32 papers in Atomic and Molecular Physics, and Optics and 2 papers in Computational Mechanics. Recurrent topics in G. Beister's work include Semiconductor Quantum Structures and Devices (30 papers), Semiconductor Lasers and Optical Devices (26 papers) and Photonic and Optical Devices (22 papers). G. Beister is often cited by papers focused on Semiconductor Quantum Structures and Devices (30 papers), Semiconductor Lasers and Optical Devices (26 papers) and Photonic and Optical Devices (22 papers). G. Beister collaborates with scholars based in Germany, Russia and India. G. Beister's co-authors include G. Tränkle, P. Ressel, G. Erbert, J. Sebastian, Bernd Sumpf, A. Klehr, H. Wenzel, Karl Häusler, U. Zeimer and A. Knauer and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of Crystal Growth.

In The Last Decade

G. Beister

35 papers receiving 409 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
G. Beister Germany 11 402 270 61 27 24 36 441
T. Kajimura Japan 13 369 0.9× 311 1.2× 32 0.5× 43 1.6× 24 1.0× 38 415
I. Sakuma Japan 13 512 1.3× 425 1.6× 58 1.0× 43 1.6× 17 0.7× 25 572
A E Drakin Russia 11 369 0.9× 313 1.2× 53 0.9× 38 1.4× 54 2.3× 62 442
A. Bärwolff Germany 13 347 0.9× 273 1.0× 60 1.0× 63 2.3× 34 1.4× 26 423
H. Ishikawa Japan 12 433 1.1× 305 1.1× 19 0.3× 25 0.9× 19 0.8× 39 473
Mark DeVito United States 13 431 1.1× 246 0.9× 60 1.0× 18 0.7× 34 1.4× 52 485
A. Ovtchinnikov United States 11 337 0.8× 266 1.0× 48 0.8× 14 0.5× 17 0.7× 37 366
R. Pathak United States 11 276 0.7× 204 0.8× 18 0.3× 32 1.2× 14 0.6× 46 344
K. Wakao Japan 14 495 1.2× 363 1.3× 32 0.5× 27 1.0× 28 1.2× 57 528
G. L. Harnagel United States 10 306 0.8× 201 0.7× 41 0.7× 23 0.9× 13 0.5× 28 334

Countries citing papers authored by G. Beister

Since Specialization
Citations

This map shows the geographic impact of G. Beister's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. Beister with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. Beister more than expected).

Fields of papers citing papers by G. Beister

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. Beister. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. Beister. The network helps show where G. Beister may publish in the future.

Co-authorship network of co-authors of G. Beister

This figure shows the co-authorship network connecting the top 25 collaborators of G. Beister. A scholar is included among the top collaborators of G. Beister based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G. Beister. G. Beister is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Sumpf, Bernd, G. Beister, G. Erbert, et al.. (2004). Reliable 1-W CW Operation of High-Brightness Tapered Diode Lasers at 735 nm. IEEE Photonics Technology Letters. 16(4). 984–986. 10 indexed citations
2.
Beister, G. & H. Wenzel. (2004). Comparison of surface and bulk contributions to non-radiative currents in InGaAs/AlGaAs laser diodes. Semiconductor Science and Technology. 19(3). 494–500. 6 indexed citations
3.
4.
Pittroff, W., G. Erbert, G. Beister, et al.. (2002). Mounting of high power laser diodes on boron nitride heat sinks using an optimized Au/Sn metallurgy. 119–124. 4 indexed citations
5.
Sebastian, J., G. Beister, F. Bugge, et al.. (2001). High-power 810-nm GaAsP-AlGaAs diode lasers with narrow beam divergence. IEEE Journal of Selected Topics in Quantum Electronics. 7(2). 334–339. 37 indexed citations
6.
Nebauer, E., et al.. (2001). Damage profile of He implantation in AlGaAs laserdiode material detected by photoluminescence. Electronics Letters. 37(7). 463–464. 2 indexed citations
7.
Klehr, A., G. Beister, G. Erbert, et al.. (2001). Defect recognition via longitudinal mode analysis of high power fundamental mode and broad area edge emitting laser diodes. Journal of Applied Physics. 90(1). 43–47. 16 indexed citations
8.
Beister, G., F. Bugge, A. Knauer, et al.. (2001). Performance of 3-W/100-μm stripe diode laser at 950 and 810 nm. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 4287. 93–93. 2 indexed citations
9.
Pittroff, W., G. Erbert, G. Beister, et al.. (2001). Mounting of high power laser diodes on boron nitride heat sinks using an optimized Au/Sn metallurgy. IEEE Transactions on Advanced Packaging. 24(2). 434–441. 63 indexed citations
10.
Sumpf, Bernd, G. Beister, A. Knauer, et al.. (2001). Tensile-strained GaAsP-AlGaAs laser diodes for reliable 1.2-W continuous-wave operation at 735 nm. IEEE Photonics Technology Letters. 13(1). 7–9. 4 indexed citations
11.
Beister, G., et al.. (1998). Non-radiative current in InGaAs/AlGaAs laser diodes as a measure of facet stability. Solid-State Electronics. 42(11). 1939–1945. 10 indexed citations
12.
Beister, G., et al.. (1996). Stability of sulfur-passivated facets of InGaAs-AlGaAs laser diodes. IEEE Photonics Technology Letters. 8(9). 1124–1126. 9 indexed citations
13.
Eliseev, Petr G., et al.. (1995). Power hysteresis and waveguide bistability of stripe quantum-well InGaAs/GaAs/GaAlAs heterolasers with a strained active layer. Quantum Electronics. 25(4). 291–301. 2 indexed citations
14.
Eliseev, Petr G., et al.. (1994). <title>Study of strained-layer InGaAs/GaAs SQW RW lasers including analysis of internal coupling of modes and antiguiding effects</title>. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 2146. 185–196. 3 indexed citations
15.
Bugge, F., et al.. (1994). Effect of growth interruption on performance of AlGaAs/InGaAs/GaAs quantum well lasers. Journal of Crystal Growth. 145(1-4). 907–910. 13 indexed citations
16.
Pittroff, W., H.‐G. Bach, & G. Beister. (1992). Numerical modelling of carrier profiles in isotype and anisotype heterojunction devices. Solid-State Electronics. 35(6). 815–820. 1 indexed citations
17.
Beister, G., et al.. (1991). Interface reactions in LPE grown InGaAsP/InP ridge waveguide laser diodes during aging?. Solid-State Electronics. 34(8). 883–888. 2 indexed citations
18.
Beister, G., et al.. (1988). Identification of surface influences on the current-voltage characteristic of narrow oxide stripe laser diodes. physica status solidi (a). 105(1). K45–K49. 4 indexed citations
19.
Beister, G., et al.. (1973). Capacitance of p+−n junctions with deep centres. physica status solidi (a). 19(2). 479–486.
20.
Beister, G.. (1973). The interpretation of C-V measurements on abrupt asymmetric p-n and schottky junctions. physica status solidi (a). 15(1). K7–K9. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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