Noboru Ohtani

2.5k total citations
140 papers, 2.1k citations indexed

About

Noboru Ohtani is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Noboru Ohtani has authored 140 papers receiving a total of 2.1k indexed citations (citations by other indexed papers that have themselves been cited), including 117 papers in Electrical and Electronic Engineering, 32 papers in Electronic, Optical and Magnetic Materials and 30 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Noboru Ohtani's work include Silicon Carbide Semiconductor Technologies (95 papers), Semiconductor materials and devices (50 papers) and Copper Interconnects and Reliability (30 papers). Noboru Ohtani is often cited by papers focused on Silicon Carbide Semiconductor Technologies (95 papers), Semiconductor materials and devices (50 papers) and Copper Interconnects and Reliability (30 papers). Noboru Ohtani collaborates with scholars based in Japan, United Kingdom and Germany. Noboru Ohtani's co-authors include Masakazu Katsuno, Jun Takahashi, Hirokatsu Yashiro, Masatoshi Kanaya, S. M. Mokler, Tatsuo Fujimoto, B.A. Joyce, Takashi Aigo, Hiroshi Tsuge and Mingyu Xie and has published in prestigious journals such as Nucleic Acids Research, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

Noboru Ohtani

135 papers receiving 2.0k citations

Peers

Noboru Ohtani

EEE

AMPO

EOMM

Robert P. Devaty United States

H. Vinzelberg Germany

F. Magnus Iceland

J. Stoëmenos Greece

C. Wood United States

H. Moriceau France

Kazuaki Kobayashi Japan

A. Fissel Germany

Mamoru Satou Japan

Yuuki Ishida Japan

Robert P. Devaty United States

Noboru Ohtani

1.8k ×1.1

EEE

800 ×1.6

533 ×1.1

AMPO

379 ×1.1

EOMM

128 ×0.5

Citations per year, relative to Noboru Ohtani Noboru Ohtani (= 1×) peers Robert P. Devaty

Countries citing papers authored by Noboru Ohtani

Since Specialization

Citations

This map shows the geographic impact of Noboru Ohtani's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Noboru Ohtani with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Noboru Ohtani more than expected).

Fields of papers citing papers by Noboru Ohtani

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Noboru Ohtani. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Noboru Ohtani. The network helps show where Noboru Ohtani may publish in the future.

Co-authorship network of co-authors of Noboru Ohtani

This figure shows the co-authorship network connecting the top 25 collaborators of Noboru Ohtani. A scholar is included among the top collaborators of Noboru Ohtani based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Noboru Ohtani. Noboru Ohtani is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Ohtani, Noboru, et al.. (2024). Nitrogen doping concentration dependence of nitrogen incorporation kinetics during physical vapor transport growth of 4H–SiC crystals. Materials Science in Semiconductor Processing. 176. 108266–108266. 3 indexed citations

Michihata, Masaki, et al.. (2024). Proposal of Damage-Free SiC Wafer Dicing Using Water Jet Guided Laser. Materials science forum. 1124. 85–89.

Ohtani, Noboru, et al.. (2023). Experimental and simulation studies of surface segregation-limited nitrogen incorporation at the growth front of physical vapor transport-grown 4H-SiC crystals. Journal of Applied Physics. 134(4). 1 indexed citations

Ohtani, Noboru, et al.. (2022). Enhanced nitrogen incorporation in the 〈1120〉 directions on the (0001) facet of 4H-SiC crystals. Japanese Journal of Applied Physics. 61(9). 95501–95501. 4 indexed citations

Ohtani, Noboru, et al.. (2021). Polarized Raman spectroscopy of phosphorous doped diamond films. Diamond and Related Materials. 114. 108283–108283. 4 indexed citations

Ohtani, Noboru, et al.. (2020). Novel characterization method for the nitrogen doping concentration in heavily nitrogen-doped 4H-SiC crystals by Raman scattering microscopy. Japanese Journal of Applied Physics. 59(5). 51003–51003. 12 indexed citations

Ohtani, Noboru, et al.. (2020). Populations and propagation behaviors of pure and mixed threading screw dislocations in physical vapor transport grown 4H-SiC crystals investigated using X-ray topography. Japanese Journal of Applied Physics. 59(9). 91002–91002. 19 indexed citations

Matsushita, Akio, et al.. (2019). Evaluation of growth sector orientation changes of high B doped high pressure and high temperature diamond by high resolution electron backscatter diffraction study. Japanese Journal of Applied Physics. 58(6). 65504–65504. 3 indexed citations

Ohtani, Noboru, Tadaaki Kaneko, Takashi Aigo, et al.. (2012). Tunneling Atomic Force Microscopy Studies on Surface Growth Pits Due to Dislocations in 4H-SiC Epitaxial Layers. Journal of Electronic Materials. 41(8). 2193–2196. 6 indexed citations

10.

Fujimoto, Tatsuo, Noboru Ohtani, Shinya Sato, et al.. (2012). Fundamental Study of Sublimation-Recrystallization Phenomena in PVT-Growth of SiC Single Crystals. Materials science forum. 717-720. 21–24. 2 indexed citations

11.

Ohtani, Noboru. (2011). Present Status and Prospects of Large Diameter SiC Single Crystal Substrates. Journal of the Vacuum Society of Japan. 54(6). 339–345. 1 indexed citations

12.

Ohtani, Noboru, Masakazu Katsuno, Tatsuo Fujimoto, et al.. (2009). Analysis of Basal Plane Bending and Basal Plane Dislocations in 4H-SiC Single Crystals. Japanese Journal of Applied Physics. 48(6R). 65503–65503. 24 indexed citations

13.

Katsuno, Masakazu, Noboru Ohtani, Tatsuo Fujimoto, & Hirokatsu Yashiro. (2005). Effect of off-orientation of seed crystal on silicon carbide (SiC) single-crystal growth on the (1120) surface. Journal of Electronic Materials. 34(1). 91–95. 1 indexed citations

14.

Ohtani, Noboru. (2004). Cleavage of double-stranded RNA by RNase HI from a thermoacidophilic archaeon, Sulfolobus tokodaii 7. Nucleic Acids Research. 32(19). 5809–5819. 44 indexed citations

15.

Nakashima, Shin-ichi, et al.. (2002). Raman Microprobe Study of Carrier Density Profiles in Modulation-Doped 6H SiC. Materials science forum. 389-393. 633–636. 1 indexed citations

16.

Ohtani, Noboru, Mitsuru Haruki, Ayumu Muroya, Masaaki Morikawa, & Shigenori Kanaya. (2000). Characterization of Ribonuclease HII from Escherichia coli Overproduced in a Soluble Form. The Journal of Biochemistry. 127(5). 895–899. 44 indexed citations

17.

Katsuno, Masakazu, Noboru Ohtani, J. Takahashi, et al.. (1998). Etching Kinetics of α-SiC Single Crystals by Molten KOH. Materials science forum. 264-268. 837–840. 11 indexed citations

18.

Satoh, Masataka, et al.. (1998). Site Identification of 6H-SiC Using RBS/Channeling Technique. Materials science forum. 264-268. 441–444. 1 indexed citations

19.

Ohtani, Noboru, et al.. (1992). Si(001) growth dynamics during Si GSMBE from disilane. Surface Science. 275(1-2). 16–25. 24 indexed citations

20.

Mokler, S. M., et al.. (1992). In situ observation of growth rate enhancement during gas source molecular beam epitaxy of Si1−xGex alloys on Si(100) surfaces. Applied Physics Letters. 61(21). 2548–2550. 23 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact