Qianlan Hu

1.3k total citations · 1 hit paper
39 papers, 1.0k citations indexed

About

Qianlan Hu is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Condensed Matter Physics. According to data from OpenAlex, Qianlan Hu has authored 39 papers receiving a total of 1.0k indexed citations (citations by other indexed papers that have themselves been cited), including 32 papers in Electrical and Electronic Engineering, 16 papers in Materials Chemistry and 7 papers in Condensed Matter Physics. Recurrent topics in Qianlan Hu's work include Semiconductor materials and devices (18 papers), Thin-Film Transistor Technologies (15 papers) and Advancements in Semiconductor Devices and Circuit Design (9 papers). Qianlan Hu is often cited by papers focused on Semiconductor materials and devices (18 papers), Thin-Film Transistor Technologies (15 papers) and Advancements in Semiconductor Devices and Circuit Design (9 papers). Qianlan Hu collaborates with scholars based in China, United States and Singapore. Qianlan Hu's co-authors include Yanqing Wu, Xuefei Li, Tiaoyang Li, Chengru Gu, Shengman Li, Mengfei Wang, Mengchuan Tian, Qingguo Gao, Jiyang Kang and Xiong Xiong and has published in prestigious journals such as Advanced Materials, Nature Materials and Applied Physics Letters.

In The Last Decade

Qianlan Hu

34 papers receiving 1.0k citations

Hit Papers

Nanometre-thin indium tin oxide for advanced high-perform... 2019 2026 2021 2023 2019 50 100 150 200 250
What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

  1. Nanometre-thin indium tin oxide for advanced high-performance electronics
    2019 299 citations Shengman Li, Mengchuan Tian et al. Nature Materials profile →

Peers

Qianlan Hu
Chiyui Ahn United States
Tiaoyang Li China
Hi‐Deok Lee South Korea
Saban M. Hus United States
M. Chudzik United States
Sheng Luo China
Yuyu Yao China
Kyeong Heon Kim South Korea
Peisong Wu China
Chiyui Ahn United States
Qianlan Hu
Citations per year, relative to Qianlan Hu Qianlan Hu (= 1×) peers Chiyui Ahn

Countries citing papers authored by Qianlan Hu

Since Specialization
Citations

This map shows the geographic impact of Qianlan Hu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Qianlan Hu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Qianlan Hu more than expected).

Fields of papers citing papers by Qianlan Hu

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Qianlan Hu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Qianlan Hu. The network helps show where Qianlan Hu may publish in the future.

Co-authorship network of co-authors of Qianlan Hu

This figure shows the co-authorship network connecting the top 25 collaborators of Qianlan Hu. A scholar is included among the top collaborators of Qianlan Hu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Qianlan Hu. Qianlan Hu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Hu, Qianlan, et al.. (2025). Amorphous indium tin oxide transistors for power amplification above 10 GHz. Nature Electronics. 8(9). 803–809.
2.
Hu, Qianlan, Zhiyu Wang, Xiong Xiong, et al.. (2025). Demonstration of Low-Power Three-Dimensional CMOS Inverters Based on Si p-Tunnel FET and ITO n-FET. IEEE Electron Device Letters. 46(3). 512–515.
3.
Liu, Shiyuan, et al.. (2025). First Demonstration of High-Temperature Reliability on La:HZO-La:In2O3 FeFET With High Endurance of 1010 at 125 °C. IEEE Electron Device Letters. 46(9). 1632–1635.
4.
Kang, Jiyang, et al.. (2025). Investigation of Physical Limits of Low Temperature Subthreshold Swing in Indium-Tin-Oxide Transistors. IEEE Electron Device Letters. 46(6). 995–998. 1 indexed citations
5.
Hu, Qianlan, et al.. (2025). First Demonstration of Deeply Scaled 2T0C DRAM With Record Data Retention and Fast Write Speed. IEEE Electron Device Letters. 46(3). 405–408. 1 indexed citations
6.
7.
8.
Hu, Qianlan, et al.. (2024). First Experimental Demonstration of 3D-Stacked 2T0C DRAM Cells Based on Indium Tin Oxide Channel. IEEE Electron Device Letters. 45(10). 1764–1767. 7 indexed citations
9.
Lin, Yanxia, Yu Cao, Sujuan Ding, et al.. (2023). Scaling aligned carbon nanotube transistors to a sub-10 nm node. Nature Electronics. 6(7). 506–515. 85 indexed citations
10.
11.
Gu, Chengru, Qianlan Hu, Honggang Liu, et al.. (2023). High-Performance Short-Channel Top-Gate Indium-Tin-Oxide Transistors by Optimized Gate Dielectric. IEEE Electron Device Letters. 44(5). 837–840. 13 indexed citations
12.
Zeng, Min, Qianlan Hu, Qijun Li, et al.. (2023). First Demonstration of Annealing-Free Top Gate La:HZO-IGZO FeFET with Record Memory Window and Endurance. 1–4. 12 indexed citations
13.
Wang, Xin, et al.. (2022). Flexible synaptic floating gate devices with dual electrical modulation based on ambipolar black phosphorus. iScience. 25(3). 103947–103947. 14 indexed citations
14.
Hu, Qianlan, Tong Xu, Jiaming Gu, Lirong Zhang, & Yunling Liu. (2022). A series of isostructural lanthanide metal–organic frameworks: effective fluorescence sensing for Fe3+, 2,4-DNP and 4-NP. CrystEngComm. 24(15). 2759–2766. 24 indexed citations
15.
Hu, Qianlan, Chengru Gu, Qijun Li, et al.. (2022). Capacitorless DRAM Cells Based on High-Performance Indium-Tin-Oxide Transistors With Record Data Retention and Reduced Write Latency. IEEE Electron Device Letters. 44(1). 60–63. 34 indexed citations
16.
Lin, Yanxia, Shibo Liang, Lin Xu, et al.. (2021). Enhancement‐Mode Field‐Effect Transistors and High‐Speed Integrated Circuits Based on Aligned Carbon Nanotube Films. Advanced Functional Materials. 32(11). 49 indexed citations
17.
Tian, Mengchuan, Qianlan Hu, Chengru Gu, et al.. (2020). Tunable 1/f Noise in CVD Bernal-Stacked Bilayer Graphene Transistors. ACS Applied Materials & Interfaces. 12(15). 17686–17690. 5 indexed citations
18.
Li, Shengman, Mengchuan Tian, Qingguo Gao, et al.. (2019). Nanometre-thin indium tin oxide for advanced high-performance electronics. Nature Materials. 18(10). 1091–1097. 299 indexed citations breakdown →
19.
20.
Hu, Qianlan, Sichao Li, Tiaoyang Li, et al.. (2018). Channel Engineering of Normally-OFF AlGaN/GaN MOS-HEMTs by Atomic Layer Etching and High-$\kappa$ Dielectric. IEEE Electron Device Letters. 39(9). 1377–1380. 46 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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