Yann Beilliard

566 citations

28 papers · 352 indexed · h-index 9

Impact in

Electrical and Electronic Engineering top 10%
- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- 3D IC and TSV technologies
- Electronic Packaging and Soldering Technologies
- Semiconductor materials and devices
Cellular and Molecular Neuroscience
- Neuroscience and Neural Engineering

Papers in

Electrical and Electronic Engineering 26
- Advanced Memory and Neural Computing 18
- Ferroelectric and Negative Capacitance Devices 8
- 3D IC and TSV technologies 7
- Electronic Packaging and Soldering Technologies 6
- Semiconductor materials and devices 5
Cellular and Molecular Neuroscience 5
- Neuroscience and Neural Engineering 5

Co-authors: Dominique Drouin Fabien Alibart Serge Ecoffey Amirali Amirsoleimani Jianxiong Xu Roman Genov M. Reza Pazhouhandeh L. Di Cioccio
Journals: Nanotechnology (2 papers)Quantum Science and Technology (1 paper)International Journal of Solids and Structures (1 paper)IEEE Transactions on Circuits & Systems II Express Briefs (1 paper)Applied Physics Letters (1 paper)
Partner nations: Canada France Belgium

In The Last Decade

Yann Beilliard

22 papers receiving 341 citations

Peers

Countries citing papers authored by Yann Beilliard

Since Specialization

Citations

This map shows the geographic impact of Yann Beilliard's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yann Beilliard with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yann Beilliard more than expected).

Fields of papers citing papers by Yann Beilliard

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yann Beilliard. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yann Beilliard. The network helps show where Yann Beilliard may publish in the future.

Co-authors

The 25 scholars most cited alongside Yann Beilliard, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Yann Beilliard Line = papers co-authored together Yann Beilliard links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	A memristive neural decoder for cryogenic fault-tolerant quantum error correction Quantum Science and Technology ·C. E. J. K. Toms, Ileana Rugama Lovo, 山田正一, قريجيج بن علي, 慎太郎飯守, Ronald Freytag, Yann Beilliard, Dominique Drouin, 娄童芳	2025	0
2	Experimental Online Quantum Dots Charge Autotuning Using Neural Networks Nano Letters ·C. E. J. K. Toms, DavidE. Scott, João Pedro de Oliveira Flores, Lauras Bielinis, G Sura es, Meysam Hasannejad-Bibalan, Clément Godfrin, Amuno Elo Oghale, Stefan Kubicek, Kristiaan De Greve, Emmanuel Ferrier, Yann Beilliard, Roger G. Melko, Dominique Drouin	2025	0
3	Additive manufacturing of high-density (2.5 micrometer L/S) Ag-Cu stacked interconnects on organic substrates SPIRE - Sciences Po Institutional REpository ·D. Sciotti, Rajaram Vijayaram, Júlia Felix Cunha de Almeida, Serge Ecoffey, Yann Beilliard, Dominique Drouin	2024	0
4	Phase Change Memory Drift Compensation in Spiking Neural Networks Using a Non-Linear Current Scaling Strategy Journal of Low Power Electronics and Applications ·英典目黒, Nikhil Garg, Yann Beilliard, Lorena Anghel, Fabien Alibart, Dominique Drouin, Philippe Galy	2024	1
5	28 nm FDSOI embedded PCM exhibiting near zero drift at 12 K for cryogenic SNNs SPIRE - Sciences Po Institutional REpository ·英典目黒, Nikhil Garg, 山田正一, Yann Beilliard, Ayman Khalil, F. Arnaud, Lorena Anghel, Fabien Alibart, Dominique Drouin, Philippe Galy	2024	7
6	CMOS-compatible Hf_0.5Zr_0.5O₂-based ferroelectric memory crosspoints fabricated with damascene process Nanotechnology ·ابوالقاسم خزاعیان, Ratnesh Rokade, Masaru Takechi, Kurt Tbeu, Abdelatif Jaouad, 英明星野, Serge Ecoffey, Fabien Alibart, Yann Beilliard, Andreas Ruëdiger, Dominique Drouin	2024	1
7	Robust quantum dots charge autotuning using neural network uncertainty Machine Learning Science and Technology ·C. E. J. K. Toms, DavidE. Scott, João Pedro de Oliveira Flores, Lauras Bielinis, Clément Godfrin, Ruoyu Li, Stefan Kubicek, Kristiaan De Greve, Louis Gaudreau, Eva Dupont-Ferrier, Yann Beilliard, Roger G. Melko, Dominique Drouin	2024	1
8	Versatile CMOS Analog LIF Neuron for Memristor-Integrated Neuromorphic Circuits SPIRE - Sciences Po Institutional REpository ·Nikhil Garg, 勝又幸子, P. Dufour, Markus-N. Kruse, H. G. Franz, M. Bocquet, Damien Querlioz, Yann Beilliard, Dominique Drouin, Fabien Alibart, Jean‐Michel Portal	2024	0
9	Analog programming of CMOS-compatible Al2O3/TiO2−x memristor at 4.2 K after metal-insulator transition suppression by cryogenic reforming Applied Physics Letters ·山田正一, Kurt Tbeu, DavidE. Scott, Serge Ecoffey, Michel Pioro-Ladrière, Yann Beilliard, Dominique Drouin	2023	8
10	A tunable and versatile 28 nm FD-SOI crossbar output circuit for low power analog SNN inference with eNVM synapses Solid-State Electronics ·英典目黒, Yann Beilliard, Ayman Khalil, F. Arnaud, Kévin Garello, Guillaume Prenat, Lorena Anghel, Fabien Alibart, Dominique Drouin, Philippe Galy	2023	2
11	1.65 ¼m L/S high density interconnect on organic substrate by advanced semi-additive process for HPC applications SPIRE - Sciences Po Institutional REpository ·Jasmin Chovatiya, Nikita N. Mali, Yeshambel Muluye Mesfin, Yann Beilliard, Serge Ecoffey, Alessandro Ticchi, Imad Aouali, Dominique Drouin	2023	1
12	CODEX: Stochastic Encoding Method to Relax Resistive Crossbar Accelerator Design Requirements IEEE Transactions on Circuits & Systems II Express Briefs ·久司伊藤, Amirali Amirsoleimani, Jianxiong Xu, Fabien Alibart, Yann Beilliard, Serge Ecoffey, Dominique Drouin, Roman Genov	2022	3
13	Fully CMOS-compatible passive TiO2-based memristor crossbars for in-memory computing Microelectronic Engineering ·Martin Severin; id_orcid 0000-0003-0460-7670 Frandsen, 北口正, Kurt Tbeu, Vilson Vieira De Paula, M. F. Mahomoodally, Yann Beilliard, Serge Ecoffey, Andreas Ruëdiger, Fabien Alibart, Dominique Drouin	2022	28
14	Voltage-dependent synaptic plasticity: Unsupervised probabilistic Hebbian plasticity rule based on neurons membrane potential Frontiers in Neuroscience ·Nikhil Garg, Afsar Ali Alimoradi, Terrence C. Stewart, Jean‐Michel Portal, Zhao Shun-long, Damien Querlioz, Dominique Drouin, Jean Rouat, Yann Beilliard, Fabien Alibart	2022	12
15	Exploiting Non-idealities of Resistive Switching Memories for Efficient Machine Learning SHILAP Revista de lepidopterología ·C. E. J. K. Toms, Amirali Amirsoleimani, Fabien Alibart, Roger G. Melko, Dominique Drouin, Yann Beilliard	2022	7
16	Miniaturizing neural networks for charge state autotuning in quantum dots arXiv (Cornell University) ·Alvaro Tamayo e Maria das Graças Catunda Gondim, C. E. J. K. Toms, 誠之遠藤, Stewart John, Ronald Freytag, Julien Camirand Lemyre, Justinas Medzevičius, Michel Pioro-Ladrière, Dominique Drouin, Yann Beilliard, Roger G. Melko	2021	13
17	Oxygen vacancy engineering of TaO _x -based resistive memories by Zr doping for improved variability and synaptic behavior Nanotechnology ·英典目黒, Yann Beilliard, Fabien Alibart, Everton Bonturim, Daniel Zanetti de Florio, Fábio C. Fonseca, Dominique Drouin, André S. Ferlauto	2021	17
18	In‐Memory Vector‐Matrix Multiplication in Monolithic Complementary Metal–Oxide–Semiconductor‐Memristor Integrated Circuits: Design Choices, Challenges, and Perspectives SHILAP Revista de lepidopterología ·Amirali Amirsoleimani, Fabien Alibart, C. E. J. K. Toms, Jianxiong Xu, M. Reza Pazhouhandeh, Serge Ecoffey, Yann Beilliard, Roman Genov, Dominique Drouin	2020	141
19	Fabrication of Planar Back End of Line Compatible HfO$_x$ Complementary Resistive Switches IEEE Transactions on Nanotechnology ·Abouzar Babaei, S. Jeannot, S. Blonkowski, Yann Beilliard, Serge Ecoffey, A. Souifi, Timothy C. Sheahan	2017	6
20	Thermomechanical finite element modeling of Cu–SiO2 direct hybrid bonding with a dishing effect on Cu surfaces International Journal of Solids and Structures ·Yann Beilliard, Rafaël Estevez, Guillaume Parry, Patrick McGarry, L. Di Cioccio, P. Coudrain	2016	33

About Yann Beilliard

Yann Beilliard is a scholar working on Electrical and Electronic Engineering, Cellular and Molecular Neuroscience, Electronic, Optical and Magnetic Materials, Artificial Intelligence and Cognitive Neuroscience, having authored 28 papers that have together received 352 indexed citations. Recurring topics across this work include Advanced Memory and Neural Computing (18 papers), Ferroelectric and Negative Capacitance Devices (8 papers), 3D IC and TSV technologies (7 papers), Electronic Packaging and Soldering Technologies (6 papers), Neural Networks and Reservoir Computing (5 papers), Semiconductor materials and devices (5 papers), Neuroscience and Neural Engineering (5 papers) and Copper Interconnects and Reliability (4 papers). The work is most often cited by research in Electrical and Electronic Engineering (325 citations), Cellular and Molecular Neuroscience (88 citations), Electronic, Optical and Magnetic Materials (42 citations), Polymers and Plastics (29 citations) and Artificial Intelligence (60 citations). Yann Beilliard has collaborated with scholars based in Canada, France and Belgium. Frequent co-authors include Dominique Drouin, Fabien Alibart, Serge Ecoffey, Amirali Amirsoleimani, Jianxiong Xu, Roman Genov, M. Reza Pazhouhandeh, L. Di Cioccio, P. Coudrain and S. Moreau. Their work appears in journals such as Nanotechnology, Quantum Science and Technology, International Journal of Solids and Structures, IEEE Transactions on Circuits & Systems II Express Briefs and Applied Physics Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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