W. Ting

982 total citations
48 papers, 688 citations indexed

About

W. Ting is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, W. Ting has authored 48 papers receiving a total of 688 indexed citations (citations by other indexed papers that have themselves been cited), including 48 papers in Electrical and Electronic Engineering, 10 papers in Materials Chemistry and 6 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in W. Ting's work include Semiconductor materials and devices (47 papers), Advancements in Semiconductor Devices and Circuit Design (25 papers) and Advanced Memory and Neural Computing (10 papers). W. Ting is often cited by papers focused on Semiconductor materials and devices (47 papers), Advancements in Semiconductor Devices and Circuit Design (25 papers) and Advanced Memory and Neural Computing (10 papers). W. Ting collaborates with scholars based in United States, Taiwan and Australia. W. Ting's co-authors include Jinho Ahn, Dim‐Lee Kwong, D. L. Kwong, G. Q. Lo, Hyunsang Hwang, D. L. Kwong, S. Lin, John Lee, John Kuehne and C.-Y. Lu and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

W. Ting

46 papers receiving 658 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
W. Ting United States	15	669	194	77	54	53	48	688
K.S. Krisch United States	12	675 1.0×	171 0.9×	46 0.6×	26 0.5×	30 0.6×	23	694
S. Habermehl United States	13	430 0.6×	208 1.1×	54 0.7×	43 0.8×	42 0.8×	41	536
R. Carin France	13	470 0.7×	115 0.6×	47 0.6×	25 0.5×	90 1.7×	44	545
L. Bailón Spain	15	534 0.8×	201 1.0×	63 0.8×	28 0.5×	36 0.7×	62	587
A. K. Stamper United States	13	457 0.7×	123 0.6×	279 3.6×	78 1.4×	71 1.3×	30	590
K. Tone United States	14	478 0.7×	96 0.5×	48 0.6×	11 0.2×	45 0.8×	39	545
J. Aitken United States	17	1.0k 1.6×	260 1.3×	236 3.1×	28 0.5×	9 0.2×	36	1.1k
Mitsuo Okamoto Japan	20	1.0k 1.6×	131 0.7×	133 1.7×	57 1.1×	108 2.0×	114	1.2k
J. Conner United States	12	515 0.8×	297 1.5×	76 1.0×	37 0.7×	12 0.2×	24	625
C.H. Carter United States	8	588 0.9×	106 0.5×	83 1.1×	20 0.4×	70 1.3×	14	644

Countries citing papers authored by W. Ting

Since Specialization

Citations

This map shows the geographic impact of W. Ting's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by W. Ting with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites W. Ting more than expected).

Fields of papers citing papers by W. Ting

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by W. Ting. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by W. Ting. The network helps show where W. Ting may publish in the future.

Co-authorship network of co-authors of W. Ting

This figure shows the co-authorship network connecting the top 25 collaborators of W. Ting. A scholar is included among the top collaborators of W. Ting based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with W. Ting. W. Ting is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Chang, Yao‐Wen, et al.. (2006). Interconnect Capacitance Characterization Using Charge-Injection-Induced Error-Free (CIEF) Charge-Based Capacitance Measurement (CBCM). IEEE Transactions on Semiconductor Manufacturing. 19(1). 50–56. 14 indexed citations

Yeh, Chi‐Ju, Wen-Jer Tsai, Tsung‐Chien Lu, et al.. (2005). A Novel PHINES Flash Memory Cell with Low Power Program/Erase, Small Pitch, Two-Bits-Per-Cell for Data Storage Applications. IEEE Transactions on Electron Devices. 52(4). 541–546. 4 indexed citations

Zous, N. K., Wen-Jer Tsai, Tsung‐Chien Lu, et al.. (2004). Lateral Migration of Trapped Holes in a Nitride Storage Flash Memory Cell and Its Qualification Methodology. IEEE Electron Device Letters. 25(9). 649–651. 14 indexed citations

Chang, Yao‐Wen, C.H. Hsieh, H.C. Lai, et al.. (2004). A Novel Simple CBCM Method Free From Charge Injection-Induced Errors. IEEE Electron Device Letters. 25(5). 262–264. 21 indexed citations

Hwang, Hyunsang, et al.. (2002). Electrical and reliability characteristics of ultrathin oxynitride gate dielectric prepared by rapid thermal processing in N/sub 2/O. 421–424. 19 indexed citations

Ahn, Jinho, W. Ting, & Dim‐Lee Kwong. (1992). Furnace nitridation of thermal SiO/sub 2/ in pure N/sub 2/O ambient for ULSI MOS applications. IEEE Electron Device Letters. 13(2). 117–119. 85 indexed citations

Ahn, Jinho, W. Ting, & D. L. Kwong. (1992). High-quality MOSFETs with ultrathin LPCVD gate SiO/sub 2/. IEEE Electron Device Letters. 13(4). 186–188. 15 indexed citations

Ting, W., et al.. (1991). MOS characteristics of ultrathin SiO/sub 2/ prepared by oxidizing Si in N/sub 2/O. IEEE Electron Device Letters. 12(8). 416–418. 64 indexed citations

Ting, W., Jinho Ahn, & Dim‐Lee Kwong. (1991). Ultrathin stacked Si₃N₄/SiO₂gate dielectrics prepared by rapid thermal processing. Electronics Letters. 27(12). 1046–1047. 1 indexed citations

10.

Ting, W., Joong Kyong Ahn, & Dim‐Lee Kwong. (1991). Charge trapping and interface state generation in ultrathin stacked Si3N4/SiO2 gate dielectrics. Journal of Applied Physics. 70(7). 3934–3936. 3 indexed citations

11.

Hwang, Hyunsang, et al.. (1991). Improved reliability characteristics of submicrometer nMOSFETs with oxynitride gate dielectric prepared by rapid thermal oxidation in N/sub 2/O. IEEE Electron Device Letters. 12(9). 495–497. 37 indexed citations

12.

Ting, W., G. Q. Lo, & Dim‐Lee Kwong. (1990). Novel gate voltage ramping technique for the characterisation of metal-oxide-semiconductor capacitor charge trapping properties. Electronics Letters. 26(16). 1257–1259. 2 indexed citations

13.

Lo, G. Q., W. Ting, Dim‐Lee Kwong, John Kuehne, & C. W. Magee. (1990). MOS characteristics of fluorinated gate dielectrics grown by rapid thermal processing in O/sub 2/ with diluted NF/sub 3/. IEEE Electron Device Letters. 11(11). 511–513. 16 indexed citations

14.

Kwong, Dim‐Lee, et al.. (1990). RTP-CVD: A Single Wafer In-Situ Multiprocessing Manufacturing Technology For ULSI. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 1189. 109–109. 1 indexed citations

15.

Lo, G. Q., et al.. (1990). Transconductance degradation and interface state generation in metal-oxide-semiconductor field-effect transistors with oxynitride gate dielectrics under hot-carrier stress. Applied Physics Letters. 56(3). 250–252. 7 indexed citations

16.

Lo, G. Q., et al.. (1990). Charge trapping properties in thin oxynitride gate dielectrics prepared by rapid thermal processing. Applied Physics Letters. 56(10). 979–981. 14 indexed citations

17.

Hwang, Hochul, et al.. (1989). Electrical characteristics of reoxidized-nitrided chemical vapor deposited oxides. Applied Physics Letters. 55(8). 755–756. 3 indexed citations

18.

Hwang, Hochul, et al.. (1989). Effects of dynamic stressing on nitrided and reoxidized-nitrided chemical-vapor-deposited gate oxides. IEEE Electron Device Letters. 10(12). 568–570. 1 indexed citations

19.

Ting, W., et al.. (1989). Effects of rapid thermal oxidation on electrical characteristics of chemical-vapor-deposited SiO2 gate dielectrics. Journal of Applied Physics. 66(11). 5641–5643. 5 indexed citations

20.

Lo, G. Q., et al.. (1989). Effects of post-nitridation anneals on radiation hardness in rapid thermal nitrided gate oxides. Applied Physics Letters. 55(23). 2405–2407. 18 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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