W. R. Thurber

2.3k total citations · 1 hit paper
27 papers, 1.6k citations indexed

About

W. R. Thurber is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, W. R. Thurber has authored 27 papers receiving a total of 1.6k indexed citations (citations by other indexed papers that have themselves been cited), including 17 papers in Atomic and Molecular Physics, and Optics, 17 papers in Electrical and Electronic Engineering and 9 papers in Materials Chemistry. Recurrent topics in W. R. Thurber's work include Semiconductor materials and interfaces (9 papers), Silicon and Solar Cell Technologies (7 papers) and Semiconductor Quantum Structures and Devices (5 papers). W. R. Thurber is often cited by papers focused on Semiconductor materials and interfaces (9 papers), Silicon and Solar Cell Technologies (7 papers) and Semiconductor Quantum Structures and Devices (5 papers). W. R. Thurber collaborates with scholars based in United States. W. R. Thurber's co-authors include H. P. R. Frederikse, W. R. Hosler, Sheng S. Li, M. Buehler, James J. Filliben, R. L. Mattis, S. D. T. Grant, Richard A. Forman, Jeremiah R. Lowney and J. Babiskin and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

W. R. Thurber

27 papers receiving 1.5k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Electronic Transport in Strontium Titanate

1964 447 citations H. P. R. Frederikse, W. R. Thurber et al. Physical Review profile →

Peers

Countries citing papers authored by W. R. Thurber

Since Specialization

Citations

This map shows the geographic impact of W. R. Thurber's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by W. R. Thurber with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites W. R. Thurber more than expected).

Fields of papers citing papers by W. R. Thurber

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by W. R. Thurber. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by W. R. Thurber. The network helps show where W. R. Thurber may publish in the future.

Co-authorship network of co-authors of W. R. Thurber

This figure shows the co-authorship network connecting the top 25 collaborators of W. R. Thurber. A scholar is included among the top collaborators of W. R. Thurber based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with W. R. Thurber. W. R. Thurber is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work	Indexed citations
1	Direct comparison of time-resolved terahertz spectroscopy and Hall Van der Pauw methods for measurement of carrier conductivity and mobility in bulk semiconductors 2017 ·Journal of the Optical Society of America B ·(unknown), W. R. Thurber, Edwin J. Heilweil	24
2	Photoreflectance study of the electronic structure of Si‐doped In _y Ga _{1− y} As _{1− x} N _x films with x < 0.012 2005 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·(unknown), Lawrence H. Robins, A. Glen Birdwell, A. J. Shapiro, W. R. Thurber, Mark D. Vaudin, Mohamed M. Fahmi, (unknown), S. Noor Mohammad	1
3	Composition and carrier-concentration dependence of the electronic structure of InyGa1−yAs1−xNx films with nitrogen mole fraction of less than 0.012 2005 ·Journal of Applied Physics ·(unknown), Lawrence H. Robins, A. Glen Birdwell, A. J. Shapiro, W. R. Thurber, Mark D. Vaudin, Mohamed M. Fahmi, (unknown), S. Noor Mohammad	4
4	Transverse magnetoresistance: A novel two-terminal method for measuring the carrier density and mobility of a semiconductor layer 1994 ·Applied Physics Letters ·Jeremiah R. Lowney, W. R. Thurber, David G. Seiler	18
5	Heavily accumulated surfaces of mercury cadmium telluride detectors: Theory and experiment 1993 ·Journal of Electronic Materials ·Jeremiah R. Lowney, David G. Seiler, W. R. Thurber, Zhongliang Yu, (unknown), C. L. Littler	4
6	Evidence of bandgap-narrowing in the space-charge layer of heavily doped silicon diodes 1984 ·Electronics Letters ·Jeremiah R. Lowney, W. R. Thurber	6
7	A novel method to detect nonexponential transients in deep level transient spectroscopy 1982 ·Journal of Applied Physics ·W. R. Thurber, Richard A. Forman, (unknown)	31
8	Semiconductor measurement technology: The relationship between resistivity and dopant density for phosphorus and boron doped silicon 1981 ·W. R. Thurber, R. L. Mattis, (unknown), James J. Filliben	4
9	A comparison of measurement techniques for determining phosphorus densities in semiconductor silicon 1980 ·Journal of Electronic Materials ·W. R. Thurber	4
10	Resistivity‐Dopant Density Relationship for Boron‐Doped Silicon 1980 ·Journal of The Electrochemical Society ·W. R. Thurber, R. L. Mattis, (unknown), James J. Filliben	158
11	Semiconductor measurement technology: Microelectronic test pattern NBS-4 1978 ·STIN ·W. R. Thurber, M. Buehler	3
12	Boron Determination in Silicon by the Nuclear Track Technique 1978 ·Journal of The Electrochemical Society ·W. R. Thurber, B. Stephen Carpenter	12
13	The dopant density and temperature dependence of electron mobility and resistivity in n-type silicon 1977 ·Solid-State Electronics ·Sheng S. Li, W. R. Thurber	183
14	A planar four-probe test structure for measuring bulk resistivity 1976 ·IEEE Transactions on Electron Devices ·M. Buehler, W. R. Thurber	21
15	Second indirect band gap in silicon 1974 ·Solid State Communications ·Richard A. Forman, W. R. Thurber, D. E. Aspnes	32
16	Shubnikov—de Haas Effect in SrTiO3 1967 ·Physical Review ·H. P. R. Frederikse, W. R. Hosler, W. R. Thurber, J. Babiskin, (unknown)	74
17	Superconductivity in Ceramic, Mixed Titanates 1966 ·Physical Review Letters ·H. P. R. Frederikse, James F. Schooley, W. R. Thurber, E. Pfeiffer, W. R. Hosler	13
18	Magnetoresistance of Semiconducting SrTiO3 1966 ·Physical Review ·H. P. R. Frederikse, W. R. Hosler, W. R. Thurber	61
19	Thermal Conductivity and Thermoelectric Power of Rutile (TiO2) 1965 ·Physical Review ·W. R. Thurber, (unknown)	87
20	Electronic Transport in Strontium Titanate breakdown → 1964 ·Physical Review ·H. P. R. Frederikse, W. R. Thurber, W. R. Hosler	447

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact