R. L. Mattis
- Electrical and Electronic Engineering
- Atomic and Molecular Physics, and Optics top 10%
- Materials Chemistry
- Biomedical Engineering
- Computational Mechanics
- Topics
- Silicon and Solar Cell Technologies (4 papers)Semiconductor materials and interfaces (4 papers)Integrated Circuits and Semiconductor Failure Analysis (3 papers)
- Cited by
- Atomic and Molecular Physics, and OpticsElectrical and Electronic EngineeringStructural Biology
- Journals
- Journal of The Electrochemical SocietyFinal Report
- Partner nations
- United States
In The Last Decade
R. L. Mattis
6 papers receiving 312 citations
Peers
Comparison fields: 5 of 31
- Electrical and Electronic Engineering 288
- Atomic and Molecular Physics, and Optics 174
- Materials Chemistry 78
- Biomedical Engineering 56
- Computational Mechanics 13
Countries citing papers authored by R. L. Mattis
This map shows the geographic impact of R. L. Mattis's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. L. Mattis with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. L. Mattis more than expected).
Fields of papers citing papers by R. L. Mattis
This network shows the impact of papers produced by R. L. Mattis. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. L. Mattis. The network helps show where R. L. Mattis may publish in the future.
Co-authorship network of co-authors of R. L. Mattis
This figure shows the co-authorship network connecting the top 25 collaborators of R. L. Mattis. A scholar is included among the top collaborators of R. L. Mattis based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R. L. Mattis. R. L. Mattis is excluded from the visualization to improve readability, since they are connected to all nodes in the network.
All Works
| # | Work | Indexed citations |
|---|---|---|
| 1 | Semiconductor measurement technology: The relationship between resistivity and dopant density for phosphorus and boron doped silicon | 4 |
| 2 | 158 | |
| 3 | 158 | |
| 4 | 2 | |
| 5 | 11 | |
| 6 | Semiconductor measurement technology: A basic program for calculating dopant density profiles from capacitance voltage data | 1 |
About R. L. Mattis
R. L. Mattis is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Industrial and Manufacturing Engineering, having authored 6 papers that have together received 334 indexed citations. Recurring topics across this work include Silicon and Solar Cell Technologies (4 papers), Semiconductor materials and interfaces (4 papers) and Integrated Circuits and Semiconductor Failure Analysis (3 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (174 citations), Electrical and Electronic Engineering (288 citations) and Structural Biology (3 citations). R. L. Mattis has collaborated with scholars based in United States. Frequent co-authors include W. R. Thurber, James J. Filliben, Thomas J. Russell and M. Buehler. Their work appears in journals such as Journal of The Electrochemical Society and Final Report.
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.