Sheng S. Li

3.8k total citations
87 papers, 2.4k citations indexed

About

Sheng S. Li is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, Sheng S. Li has authored 87 papers receiving a total of 2.4k indexed citations (citations by other indexed papers that have themselves been cited), including 83 papers in Electrical and Electronic Engineering, 62 papers in Atomic and Molecular Physics, and Optics and 17 papers in Biomedical Engineering. Recurrent topics in Sheng S. Li's work include Semiconductor Quantum Structures and Devices (52 papers), Advanced Semiconductor Detectors and Materials (37 papers) and Semiconductor materials and devices (22 papers). Sheng S. Li is often cited by papers focused on Semiconductor Quantum Structures and Devices (52 papers), Advanced Semiconductor Detectors and Materials (37 papers) and Semiconductor materials and devices (22 papers). Sheng S. Li collaborates with scholars based in United States and Taiwan. Sheng S. Li's co-authors include S. Cristoloveanu, W. R. Thurber, Meimei Z. Tidrow, O.D. Crisalle, Pin Ho, Travis J. Anderson, Xudong Jiang, Lin Jiang, Yuxuan Wang and Jen-Inn Chyi and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Solar Energy Materials and Solar Cells.

In The Last Decade

Sheng S. Li

81 papers receiving 2.3k citations

Peers

Sheng S. Li

EEE

AMPO

SPECT

C. Delalande France

I. N. Yassievich Russia

Tchavdar N. Todorov United Kingdom

Ronald Ulbricht Germany

James Lloyd‐Hughes United Kingdom

H. Schweizer Germany

B. Fluegel United States

Agustin Schiffrin Germany

Emil S. Köteles Canada

Yukio Fukuda Japan

C. Delalande France

Sheng S. Li

1.3k ×0.7

EEE

2.6k ×2.3

AMPO

998 ×1.1

434 ×1.5

178 ×1.0

SPECT

Citations per year, relative to Sheng S. Li Sheng S. Li (= 1×) peers C. Delalande

Countries citing papers authored by Sheng S. Li

Since Specialization

Citations

This map shows the geographic impact of Sheng S. Li's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Sheng S. Li with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Sheng S. Li more than expected).

Fields of papers citing papers by Sheng S. Li

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Sheng S. Li. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Sheng S. Li. The network helps show where Sheng S. Li may publish in the future.

Co-authorship network of co-authors of Sheng S. Li

This figure shows the co-authorship network connecting the top 25 collaborators of Sheng S. Li. A scholar is included among the top collaborators of Sheng S. Li based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Sheng S. Li. Sheng S. Li is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Jiang, Lin, Sheng S. Li, Wei‐Sheng Liu, N. T. Yeh, & Jen‐Inn Chyi. (2004). A two-stack, multi-color In0.5Ga0.5As/GaAs and lnAs/GaAs quantum dot infrared photodetector for long wavelength infrared detection. Infrared Physics & Technology. 46(3). 249–256. 7 indexed citations

Jiang, Lin, et al.. (2003). An In 0.6 Ga 0.4 As/GaAs quantum dot infrared photodetector with operating temperature up to 260K. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 5074. 677–677.

Jiang, Lin, et al.. (2003). In 0.6 Ga 0.4 As/GaAs quantum-dot infrared photodetector with operating temperature up to 260 K. Applied Physics Letters. 82(12). 1986–1988. 111 indexed citations

Tidrow, Meimei Z., et al.. (1999). A four-color quantum well infrared photodetector. Applied Physics Letters. 74(9). 1335–1337. 24 indexed citations

Tidrow, Meimei Z., et al.. (1997). A high strain two-stack two-color quantum well infrared photodetector. Applied Physics Letters. 70(7). 859–861. 48 indexed citations

Li, Sheng S., et al.. (1997). The growth and characterization of two new P-type compressively strained layer InGaAs/AlGaAs/GaAs quantum well infrared photodetectors for mid- and long-wavelength infrared detection. Journal of Crystal Growth. 175-176. 964–970. 3 indexed citations

Li, Sheng S., et al.. (1996). Modeling and parameter extraction of gate-all-around nMOS/SOI transistors in the linear region. Solid-State Electronics. 39(7). 991–997. 2 indexed citations

Bosman, Gijs, et al.. (1996). Current conduction in quantum well infrared photodetectors under low bias operation. Applied Physics Letters. 68(18). 2532–2534. 3 indexed citations

Li, Sheng S., et al.. (1996). A voltage-tunable multicolor triple-coupled InGaAs/GaAs/AlGaAs quantum-well infrared photodetector for 8–12 μm detection. Applied Physics Letters. 69(16). 2412–2414. 50 indexed citations

10.

Li, Sheng S., et al.. (1995). Proceedings of the Third International Symposium on long wavelength infrared detectors and arrays : physics and applications III. Electrochemical Society eBooks. 4 indexed citations

11.

Wang, Daniel, Gijs Bosman, & Sheng S. Li. (1994). On the dark current noise of quantum well infrared photodetectors. Applied Physics Letters. 65(2). 183–185. 12 indexed citations

12.

Yang, Pan‐Chyr & Sheng S. Li. (1993). Analysis of current-voltage characteristics of fully depleted SOI MOSFETs. Solid-State Electronics. 36(5). 685–692. 12 indexed citations

13.

Wang, Yuxuan, et al.. (1992). Low dark current step-bound-to-miniband transition InGaAs/GaAs/AlGaAs multiquantum-well infrared detector. Applied Physics Letters. 60(8). 992–994. 28 indexed citations

14.

Yang, Pan‐Chyr, et al.. (1992). Measurements of interface state density in partially- and fully-depleted silicon-on-insulator MOSFETs by a high-low-frequency transconductance method. Solid-State Electronics. 35(8). 1031–1035. 10 indexed citations

15.

Li, Sheng S., et al.. (1991). A metal grating coupled bound-to-miniband transition GaAs multiquantum well/superlattice infrared detector. Applied Physics Letters. 59(11). 1332–1334. 58 indexed citations

16.

Kim, Jaehoon, Sheng S. Li, L. Figueroa, Thomas F. Carruthers, & R. Steven Wagner. (1988). A high-speed InP-based InxGa1−xAs Schottky barrier infrared photodiode for fiber-optic communications. Journal of Applied Physics. 64(11). 6536–6540. 9 indexed citations

17.

Li, Sheng S.. (1987). Development of a High Speed InGaAs/InP Schottky Barrier Photodetector for Millimeter-Wave Fiber Optical Links.. 1 indexed citations

18.

Li, Sheng S.. (1978). Theoretical analysis of a novel MPN gallium arsenide Schottky barrier solar cell. Solid-State Electronics. 21(2). 435–438. 15 indexed citations

19.

Li, Sheng S.. (1976). Determination of minority-carrier diffusion length in indium phosphide by surface photovoltage measurement. Applied Physics Letters. 29(2). 126–127. 43 indexed citations

20.

Li, Sheng S., et al.. (1975). Electrical properties of epitaxially grown InAs0.61P0.39 films. Journal of Applied Physics. 46(3). 1223–1228. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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