W. Polspoel

556 total citations
14 papers, 171 citations indexed

About

W. Polspoel is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, W. Polspoel has authored 14 papers receiving a total of 171 indexed citations (citations by other indexed papers that have themselves been cited), including 13 papers in Electrical and Electronic Engineering, 8 papers in Atomic and Molecular Physics, and Optics and 3 papers in Materials Chemistry. Recurrent topics in W. Polspoel's work include Semiconductor materials and devices (10 papers), Integrated Circuits and Semiconductor Failure Analysis (10 papers) and Force Microscopy Techniques and Applications (8 papers). W. Polspoel is often cited by papers focused on Semiconductor materials and devices (10 papers), Integrated Circuits and Semiconductor Failure Analysis (10 papers) and Force Microscopy Techniques and Applications (8 papers). W. Polspoel collaborates with scholars based in Belgium, Spain and Netherlands. W. Polspoel's co-authors include Wilfried Vandervorst, Patrick Fiorenza, Jay Mody, M. Nafrı́a, Paola Favia, M. Porti, X. Aymerich, H. Bender, Pierre Eyben and B. Kaczer and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

W. Polspoel

14 papers receiving 170 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
W. Polspoel Belgium	8	152	66	65	20	6	14	171
R. Singh India	3	143 0.9×	94 1.4×	68 1.0×	24 1.2×	12 2.0×	5	188
A. Vannucci Italy	7	138 0.9×	80 1.2×	57 0.9×	9 0.5×	3 0.5×	32	180
Renyuan Gao United States	7	216 1.4×	59 0.9×	25 0.4×	36 1.8×	11 1.8×	13	247
Piotr J. Cegielski Germany	6	150 1.0×	59 0.9×	57 0.9×	45 2.3×	4 0.7×	11	166
François Gibelli France	4	114 0.8×	73 1.1×	71 1.1×	32 1.6×	4 0.7×	8	146
Jonas Kiemle Germany	10	124 0.8×	88 1.3×	175 2.7×	16 0.8×	6 1.0×	14	217
Jingjing Zhou China	8	164 1.1×	64 1.0×	22 0.3×	47 2.4×	6 1.0×	30	204
Thomas Kunze Germany	6	212 1.4×	38 0.6×	189 2.9×	19 0.9×	18 3.0×	9	223
Oliver Schultz Germany	3	366 2.4×	131 2.0×	118 1.8×	34 1.7×	3 0.5×	3	369
Diao Li China	8	128 0.8×	117 1.8×	48 0.7×	24 1.2×	5 0.8×	14	173

Countries citing papers authored by W. Polspoel

Since Specialization

Citations

This map shows the geographic impact of W. Polspoel's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by W. Polspoel with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites W. Polspoel more than expected).

Fields of papers citing papers by W. Polspoel

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by W. Polspoel. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by W. Polspoel. The network helps show where W. Polspoel may publish in the future.

Co-authorship network of co-authors of W. Polspoel

This figure shows the co-authorship network connecting the top 25 collaborators of W. Polspoel. A scholar is included among the top collaborators of W. Polspoel based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with W. Polspoel. W. Polspoel is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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14 of 14 papers shown

Goux, L., W. Polspoel, J. G. Lisoni, et al.. (2010). Bipolar Switching Characteristics and Scalability in NiO Layers Made by Thermal Oxidation of Ni. Journal of The Electrochemical Society. 157(8). G187–G187. 12 indexed citations

Pawlak, Małgorzata, B. Kaczer, M. Popovici, et al.. (2010). Impact of crystallization behavior of SrxTiyOz films on electrical properties of metal-insulator-metal capacitors with TiN electrodes. Applied Physics Letters. 97(16). 27 indexed citations

Mody, Jay, Ray Duffy, Pierre Eyben, et al.. (2010). Experimental studies of dose retention and activation in fin field-effect-transistor-based structures. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 28(1). C1H5–C1H13. 25 indexed citations

Polspoel, W., et al.. (2009). Comparison of standard macroscopic and conductive atomic force microscopy leakage measurements on gate removed high-k capacitors. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 27(1). 356–359. 3 indexed citations

Mody, Jay, Ray Duffy, Pierre Eyben, et al.. (2009). Experimental studies of dose retention and activation in FinFet-based structures. 2 indexed citations

Polspoel, W., Paola Favia, Jay Mody, H. Bender, & Wilfried Vandervorst. (2009). Physical degradation of gate dielectrics induced by local electrical stress using conductive atomic force microscopy. Journal of Applied Physics. 106(2). 14 indexed citations

Polspoel, W., et al.. (2008). Nanometer-scale leakage measurements in high vacuum on de-processed high-k capacitors. Microelectronics Reliability. 48(8-9). 1521–1524. 10 indexed citations

Polspoel, W., et al.. (2008). Improved Characterization of high-k Degradation with Vacuum C-AFM. MRS Proceedings. 1074. 2 indexed citations

Mody, Jay, Pierre Eyben, W. Polspoel, M. Jurczak, & Wilfried Vandervorst. (2008). Scanning Spreading Resistance Microscopy For 3D-Carrier Profiling in FinFET-based Structures. MRS Proceedings. 1070. 2 indexed citations

10.

Polspoel, W., Alexander Volodin, Chris Van Haesendonck, et al.. (2008). Nanoscale effects of annealing on the electrical characteristics of hafnium based devices measured in a vacuum environment. 47. 657–658. 1 indexed citations

11.

Polspoel, W., Alexander Volodin, Chris Van Haesendonck, et al.. (2008). Influence of vacuum environment on conductive atomic force microscopy measurements of advanced metal-oxide-semiconductor gate dielectrics. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 26(4). 1445–1449. 7 indexed citations

12.

Polspoel, W. & Wilfried Vandervorst. (2006). Evaluation of trap creation and charging in thin SiO2 using both SCM and C-AFM. Microelectronic Engineering. 84(3). 495–500. 26 indexed citations

13.

Fiorenza, Patrick, W. Polspoel, & Wilfried Vandervorst. (2006). Conductive atomic force microscopy studies of thin SiO2 layer degradation. Applied Physics Letters. 88(22). 34 indexed citations

14.

Polspoel, W., Wilfried Vandervorst, J. Pétry, Thierry Conard, & A. Benedetti. (2005). Comparison of electric properties of ultra-thin thermal and plasma nitrided silicon oxides with different post-deposition treatments using C-AFM. Microelectronic Engineering. 80. 436–439. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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